Search Results (6)

Nonstoichiometric GeSi_xO_y glass films and many-layer structures based on them were obtained by high-vacuum electron beam vapor deposition (EBVD). Using EBVD, the GeO₂, SiO, SiO₂, or Ge powders were co-evaporated and deposited onto a cold (100 °C) p⁺-Si(001) substrate with resistivity ρ = 0.0016 ± 0.0001 Ohm·cm. The as-deposited samples were studied by Fourier-transformed infrared spectroscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. A transparent indium–tin–oxide (ITO) contact was deposited as the top electrode, and memristor metal–insulator–semiconductor (MIS) structures were fabricated. The current–voltage characteristics (I–V), as well as the resistive switching cycles of the MIS, have been studied. Reversible resistive switching (memristor effect) was observed for one-layer GeSi_0.9O_2.8, two-layer GeSi_0.9O_1.8/GeSi_0.9O_2.8 and GeSi_0.9O_1.8/SiO, and three-layer SiO₂/a–Ge/GeSi_0.9O_2.8 MIS structures. For a one-layer MIS structure, the number of rewriting cycles reached several thousand, while the memory window (the ratio of currents in the ON and OFF states) remained at 1–2 orders of magnitude. Intermediate resistance states were observed in many-layer structures. These states may be promising for use in multi-bit memristors and for simulating neural networks. In the three-layer MIS structure, resistive switching took place quite smoothly, and hysteresis was observed in the I–V characteristics; such a structure can be used as an “analog” memristor. Full article

Optical whispering gallery mode microresonators with controllable parameters in the telecommunication range are demanded for diverse applications. Controlling group velocity dispersion (GVD) in microresonators is an important problem, as near-zero GVD in a broad wavelength range could contribute to the development of new microresonator-based light sources. We demonstrated theoretically near-zero dispersion tailoring in the SCL-band in combination with free-spectral range (FSR) optimization for FSR = 200 GHz and 300 GHz in silica glass microspheres with micron-scale germanosilicate coating. As an illustration of a possible application of such a GVD, we also performed a theoretical study of degenerate four-wave mixing (FWM) processes in the proposed microresonators for pumping in the SCL-band. We found that in some cases the generation of two or even three pairs of waves–satellites in a FWM process is possible in principle due to the specific GVD features. We also determined optimal microresonator configurations for achieving gradual change in the satellite frequency shift for the pump wavelengths in the SCL-, S-, CL-, C-, and L-bands. The maximum obtained FWM satellite tunability span was ~78 THz for a pump wavelength change of ~30 nm, which greatly exceeds the results for a regular silica microsphere without coating. Full article

Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO₂] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while the second portion of MIS structures was annealed at 500 °C in argon for 20 min. The structural properties of as-deposited and annealed non-stoichiometric germanosilicate (GeSi_xO_y) films were studied using X-ray photoelectron spectroscopy, electron microscopy, Raman and infrared absorption spectroscopy, spectral ellipsometry, and transmittance and reflectance spectroscopy. It was found that the as-deposited GeO[SiO] film contained amorphous Ge clusters. Annealing led to the formation of amorphous Ge nanoclusters in the GeO[SiO₂] film and an increase of amorphous Ge volume in the GeO[SiO] film. Switching from a high resistance state (HRS OFF) to a low resistance state (LRS ON) and vice versa was detected in the as-deposited and annealed MIS structures. The endurance studies showed that slight degradation of the memory window occurred, mainly caused by the decrease of the ON state current. Notably, intermediate resistance states were observed in almost all MIS structures, in addition to the HRS and LRS states. This property can be used for the simulation of neuromorphic devices and related applications in data science. Full article

The effect of γ-ray irradiation on the surface plasmon resonance (SPR) sensing capability of refractive index (n = 1.418–1.448) of the silica glass optical fiber comprised of germano-silicate glass cladding embedded with Au nano-particles (NPs) was investigated. As the γ-ray irradiation increased from 1 h to 3 h with the dose rate of 1190 Gy/h, the morphology of the Au NPs and the SPR spectrum were found to change. The average diameter of Au NPs increased with the aspect ratio from 1 to 2, and the nano-particles became grown to the clusters. The SPR band wavelength shifted towards a longer wavelength with the increase of total dose of γ-ray irradiation regardless of the corresponding refractive indices. The SPR sensitivities (wavelength/refractive index unit, nm/RIU) also increased from 407 nm/RIU to 3553 nm/RIU, 1483 nm/RIU, and 2335 nm/RIU after the γ-ray irradiation at a total dose of 1190 Gy, 2380 Gy, and 3570 Gy, respectively. Full article

Glass polyalkenoate cements (GPCs) have potential for skeletal cementation. Unfortunately, commercial GPCs all contain, and subsequently release, aluminum ions, which have been implicated in degenerative brain disease. The purpose of this research was to create a series of aluminum-free GPCs constructed from silicate (SiO₂), calcium (CaO), zinc (ZnO) and sodium (Na₂O)-containing glasses mixed with poly-acrylic acid (PAA) and to evaluate the potential of these cements for cranioplasty applications. Three glasses were formulated based on the SiO₂-CaO-ZnO-Na₂O parent glass (KBT01) with 0.03 mol % (KBT02) and 0.06 mol % (KBT03) germanium (GeO₂) substituted for ZnO. Each glass was then mixed with 50 wt % of a patented SiO₂-CaO-ZnO-strontium (SrO) glass composition and the resultant mixtures were subsequently reacted with aqueous PAA (50 wt % addition) to produce three GPCs. The incorporation of Ge in the glass phase was found to result in decreased working (142 s to 112 s) and setting (807 s to 448 s) times for the cements manufactured from them, likely due to the increase in crosslink formation between the Ge-containing glasses and the PAA. Compressive (σ_c) and biaxial flexural (σ_f) strengths of the cements were examined at 1, 7 and 30 days post mixing and were found to increase with both maturation and Ge content. The bonding strength of a titanium cylinder (Ti) attached to bone by the cements increased from 0.2 MPa, when placed, to 0.6 MPa, after 14 days maturation. The results of this research indicate that Germano-Silicate based GPCs have suitable handling and mechanical properties for cranioplasty fixation. Full article

The regeneration of UV-written long period gratings (LPG) in boron-codoped germanosilicate “W” fibre is demonstrated and studied. They survive temperatures over 1000 °C. Compared with regenerated FBGs fabricated in the same type of fibre, the evolution curves of LPGs during regeneration and post-annealing reveal even more detail of glass relaxation. Piece-wise temperature dependence is observed, indicating the onset of a phase transition of glass in the core and inner cladding at ~500 °C and ~250 °C, and the melting of inner cladding between 860 °C and 900 °C. An asymmetric spectral response with increasing and decreasing annealing temperature points to the complex process dependent material system response. Resonant wavelength tuning by adjusting the dwell temperature at which regeneration is undertaken is demonstrated, showing a shorter resonant wavelength and shorter time for stabilisation with higher dwell temperatures. All the regenerated LPGs are nearly strain-insensitive and cannot be tuned by applying loads during annealing as done for regenerated FBGs. Full article