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Open AccessArticle

Influence of Parasitic Effects in Negative Differential Resistance Characteristics of Resonant Tunneling

Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung City 81157, Taiwan
Electronics 2019, 8(6), 673; https://doi.org/10.3390/electronics8060673
Received: 18 May 2019 / Revised: 4 June 2019 / Accepted: 10 June 2019 / Published: 13 June 2019
A resonant tunneling electronic circuit (RTEC) with high and multiple peak-to-valley current density ratios (PVCDRs) exhibited in the negative differential resistance (NDR) curve has been proposed in this research. The PVCDR values in simulating research and experimental research of double PVCDR RTEC were respectively reached as high as 1.79 and 22 in average, which were obtained using the designed single PVCDR RTECs structure. Also, the peak current density (PCD) values of the last NDR in the double PVCDR RTEC structure in the simulation and experiment were respectively 1.85 A and 42 µA. Triple NDR characteristics also had been obtained with the PCD values reaching as high as 2.9 A and 46 µA, respectively, in simulating and experimental researches. The PVCDR values of triple NDR characteristic were respectively 1.5 and 4.6 in the simulation and experiment. View Full-Text
Keywords: negative differential resistance; parasitic effect; resonant tunneling; peak-to-valley current ratio; current density negative differential resistance; parasitic effect; resonant tunneling; peak-to-valley current ratio; current density
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MDPI and ACS Style

Yang, C.C. Influence of Parasitic Effects in Negative Differential Resistance Characteristics of Resonant Tunneling. Electronics 2019, 8, 673.

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