An Improved Electro-Thermal Model to Estimate the Junction Temperature of IGBT Module
College of Automation & College of Artificial Intelligence, Nanjing University of Posts and Telecommunications, Nanjing 210046, China
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Electronics 2019, 8(10), 1066; https://doi.org/10.3390/electronics8101066
Received: 3 September 2019 / Revised: 17 September 2019 / Accepted: 19 September 2019 / Published: 20 September 2019
(This article belongs to the Section Power Electronics)
Junction temperature is a key parameter that influences both the performance and the reliability of the insulated gate bipolar transistor (IGBT) module, while solder fatigue has a significant effect on the accuracy of junction temperature estimates using the electro-thermal model. In this paper, an improved electro-thermal model, which is independent of solder fatigue, is proposed to accurately estimate the junction temperature of IGBT module. Firstly, solder fatigue conditions are monitored in real time with the information of the case temperatures. Secondly, when solder fatigue is found, the update process of the electro-thermal model parameters is performed to match the model parameters with the fatigue device. With the above two-step process, the influence of solder fatigue on the accuracy of temperature estimates can be removed in good time. Experimental results are provided to validate the effectiveness of the proposed method.
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Keywords:
IGBTs; junction temperature; solder fatigue; thermal model; reliability
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MDPI and ACS Style
Hu, Z.; Zhang, W.; Wu, J. An Improved Electro-Thermal Model to Estimate the Junction Temperature of IGBT Module. Electronics 2019, 8, 1066. https://doi.org/10.3390/electronics8101066
AMA Style
Hu Z, Zhang W, Wu J. An Improved Electro-Thermal Model to Estimate the Junction Temperature of IGBT Module. Electronics. 2019; 8(10):1066. https://doi.org/10.3390/electronics8101066
Chicago/Turabian StyleHu, Zhen; Zhang, Wenfeng; Wu, Juai. 2019. "An Improved Electro-Thermal Model to Estimate the Junction Temperature of IGBT Module" Electronics 8, no. 10: 1066. https://doi.org/10.3390/electronics8101066
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