Next Article in Journal
Virtual Synchronous Generator Using an Intelligent Controller for Virtual Inertia Estimation
Next Article in Special Issue
Simple, Fast, and Accurate Broadband Complex Permittivity Characterization Algorithm: Methodology and Experimental Validation from 140 GHz up to 220 GHz
Previous Article in Journal
Caffe2Unity: Immersive Visualization and Interpretation of Deep Neural Networks
Previous Article in Special Issue
Massive MIMO Techniques for 5G and Beyond—Opportunities and Challenges
 
 
Article

Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper

1
Department of Electronics and Telecommunications, Politecnico di Torino, 10129 Torino, Italy
2
Microwave Engineering Center for Space Applications (MECSA), 00133 Rome, Italy
*
Author to whom correspondence should be addressed.
Academic Editors: Hirokazu Kobayashi, Pingyi Fan and Andrea Randazzo
Electronics 2022, 11(1), 84; https://doi.org/10.3390/electronics11010084
Received: 23 November 2021 / Revised: 17 December 2021 / Accepted: 21 December 2021 / Published: 28 December 2021
This paper discusses some of the design choices underlying the development of watt-level integrated Doherty power amplifiers in the K and Ka band, focusing on compound semiconductor technologies. The key aspect of on-chip power combination is discussed, presenting and comparing some of the possible alternatives. Then, the impact on the achievable bandwidth and performance of different parameters is quantified, adopting an approximate analysis, which focuses on the Doherty output combiner and allows estimating the non-linear performance of the amplifier thanks to some simplifying assumptions, without requiring a full, non-linear model of the active devices. Two sample GaAs and GaN technologies are compared first, considering parameters that are representative of the currently available commercial processes, and then several power combination strategies are analyzed, adopting the GaN technology, which is currently the only one that allows achieving the power levels required by the applications directly on chip. Finally, some hints as to the impact of the output parasitic effects of the transistors on the presented analysis are given. View Full-Text
Keywords: bandwidth; Doherty; GaAs; GaN; MMIC; power amplifier bandwidth; Doherty; GaAs; GaN; MMIC; power amplifier
Show Figures

Figure 1

MDPI and ACS Style

Piacibello, A.; Camarchia, V. Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper. Electronics 2022, 11, 84. https://doi.org/10.3390/electronics11010084

AMA Style

Piacibello A, Camarchia V. Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper. Electronics. 2022; 11(1):84. https://doi.org/10.3390/electronics11010084

Chicago/Turabian Style

Piacibello, Anna, and Vittorio Camarchia. 2022. "Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper" Electronics 11, no. 1: 84. https://doi.org/10.3390/electronics11010084

Find Other Styles
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop