Pechmann, S.; Mai, T.; Völkel, M.; Mahadevaiah, M.K.; Perez, E.; Perez-Bosch Quesada, E.; Reichenbach, M.; Wenger, C.; Hagelauer, A.
A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells. Electronics 2021, 10, 530.
https://doi.org/10.3390/electronics10050530
AMA Style
Pechmann S, Mai T, Völkel M, Mahadevaiah MK, Perez E, Perez-Bosch Quesada E, Reichenbach M, Wenger C, Hagelauer A.
A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells. Electronics. 2021; 10(5):530.
https://doi.org/10.3390/electronics10050530
Chicago/Turabian Style
Pechmann, Stefan, Timo Mai, Matthias Völkel, Mamathamba K. Mahadevaiah, Eduardo Perez, Emilio Perez-Bosch Quesada, Marc Reichenbach, Christian Wenger, and Amelie Hagelauer.
2021. "A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells" Electronics 10, no. 5: 530.
https://doi.org/10.3390/electronics10050530
APA Style
Pechmann, S., Mai, T., Völkel, M., Mahadevaiah, M. K., Perez, E., Perez-Bosch Quesada, E., Reichenbach, M., Wenger, C., & Hagelauer, A.
(2021). A Versatile, Voltage-Pulse Based Read and Programming Circuit for Multi-Level RRAM Cells. Electronics, 10(5), 530.
https://doi.org/10.3390/electronics10050530