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Article

Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE

1
Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane, QLD 4111, Australia
2
Electronics Department, Graphic Era (Deemed to Be University), Dehradun, Uttarakhand 248002, India
*
Author to whom correspondence should be addressed.
Electronics 2021, 10(2), 130; https://doi.org/10.3390/electronics10020130
Received: 16 December 2020 / Revised: 2 January 2021 / Accepted: 6 January 2021 / Published: 9 January 2021
(This article belongs to the Section Power Electronics)
The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for the design and verification of power-electronic circuits. This paper shows that GaN-HEMTs can be modeled by selected equations from the standard MOSFET LEVEL 3 model in SPICE. A method is proposed for the extraction of SPICE parameters in these equations. The selected equations and the proposed parameter-extraction method are verified with measured static and dynamic characteristics of commercial GaN-HEMTs. Furthermore, a double pulse test is performed in LTSpice and compared to its manufacturer model to demonstrate the effectiveness of the MOSFET LEVEL 3 model. The advantage of the proposed approach to use the MOSFET LEVEL 3 model, in comparison to the alternative behavioral-based model provided by some manufacturers, is that users can apply the proposed method to adjust the parameters of the MOSFET LEVEL 3 model for the case of manufacturers who do not provide SPICE models for their HEMTs. View Full-Text
Keywords: gallium nitride (GaN); modeling; MOSFET equations; power HEMTs; parameter extraction; semiconductor device modeling; SPICE equations; SPICE simulator gallium nitride (GaN); modeling; MOSFET equations; power HEMTs; parameter extraction; semiconductor device modeling; SPICE equations; SPICE simulator
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MDPI and ACS Style

Jadli, U.; Mohd-Yasin, F.; Moghadam, H.A.; Pande, P.; Chaturvedi, M.; Dimitrijev, S. Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE. Electronics 2021, 10, 130. https://doi.org/10.3390/electronics10020130

AMA Style

Jadli U, Mohd-Yasin F, Moghadam HA, Pande P, Chaturvedi M, Dimitrijev S. Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE. Electronics. 2021; 10(2):130. https://doi.org/10.3390/electronics10020130

Chicago/Turabian Style

Jadli, Utkarsh, Faisal Mohd-Yasin, Hamid A. Moghadam, Peyush Pande, Mayank Chaturvedi, and Sima Dimitrijev. 2021. "Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE" Electronics 10, no. 2: 130. https://doi.org/10.3390/electronics10020130

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