Sun, S.; Ma, D.; Ye, B.; Liu, G.; Luo, N.; Huang, H.
Ultra-Thin Al2O3 Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors. J. Low Power Electron. Appl. 2025, 15, 26.
https://doi.org/10.3390/jlpea15020026
AMA Style
Sun S, Ma D, Ye B, Liu G, Luo N, Huang H.
Ultra-Thin Al2O3 Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors. Journal of Low Power Electronics and Applications. 2025; 15(2):26.
https://doi.org/10.3390/jlpea15020026
Chicago/Turabian Style
Sun, Shiwei, Dinghao Ma, Boxi Ye, Guanshun Liu, Nanting Luo, and Hao Huang.
2025. "Ultra-Thin Al2O3 Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors" Journal of Low Power Electronics and Applications 15, no. 2: 26.
https://doi.org/10.3390/jlpea15020026
APA Style
Sun, S., Ma, D., Ye, B., Liu, G., Luo, N., & Huang, H.
(2025). Ultra-Thin Al2O3 Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors. Journal of Low Power Electronics and Applications, 15(2), 26.
https://doi.org/10.3390/jlpea15020026