Sun, S.;                     Ma, D.;                     Ye, B.;                     Liu, G.;                     Luo, N.;                     Huang, H.    
        Ultra-Thin Al2O3 Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors. J. Low Power Electron. Appl. 2025, 15, 26.
    https://doi.org/10.3390/jlpea15020026
    AMA Style
    
                                Sun S,                                 Ma D,                                 Ye B,                                 Liu G,                                 Luo N,                                 Huang H.        
                Ultra-Thin Al2O3 Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors. Journal of Low Power Electronics and Applications. 2025; 15(2):26.
        https://doi.org/10.3390/jlpea15020026
    
    Chicago/Turabian Style
    
                                Sun, Shiwei,                                 Dinghao Ma,                                 Boxi Ye,                                 Guanshun Liu,                                 Nanting Luo,                                 and Hao Huang.        
                2025. "Ultra-Thin Al2O3 Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors" Journal of Low Power Electronics and Applications 15, no. 2: 26.
        https://doi.org/10.3390/jlpea15020026
    
    APA Style
    
                                Sun, S.,                                 Ma, D.,                                 Ye, B.,                                 Liu, G.,                                 Luo, N.,                                 & Huang, H.        
        
        (2025). Ultra-Thin Al2O3 Grown by PEALD for Low-Power Molybdenum Disulfide Field-Effect Transistors. Journal of Low Power Electronics and Applications, 15(2), 26.
        https://doi.org/10.3390/jlpea15020026