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Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Korea
School of Integrated Technology, Yonsei Institute of Convergence Technology, Yonsei University, Incheon 21983, Korea
Author to whom correspondence should be addressed.
Coatings 2019, 9(6), 349;
Received: 10 May 2019 / Revised: 23 May 2019 / Accepted: 27 May 2019 / Published: 28 May 2019
(This article belongs to the Special Issue Advanced Strategies in Thin Film Engineering by Magnetron Sputtering)
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In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10−5 Ω-cm2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power. View Full-Text
Keywords: deposition rate; contact resistance; nickel silicide; radio frequency deposition rate; contact resistance; nickel silicide; radio frequency

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Eadi, S.B.; Song, H.-S.; Song, H.-D.; Oh, J.; Lee, H.-D. Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi. Coatings 2019, 9, 349.

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