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Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi

1
Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Korea
2
School of Integrated Technology, Yonsei Institute of Convergence Technology, Yonsei University, Incheon 21983, Korea
*
Author to whom correspondence should be addressed.
Coatings 2019, 9(6), 349; https://doi.org/10.3390/coatings9060349
Received: 10 May 2019 / Revised: 23 May 2019 / Accepted: 27 May 2019 / Published: 28 May 2019
(This article belongs to the Special Issue Advanced Strategies in Thin Film Engineering by Magnetron Sputtering)
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Abstract

In this study, the effect of radio frequency (RF) power on nickel (Ni) film deposition was studied to investigate the applications of lowering the contact resistance in the NiSi/Si junction. The RF powers of 100, 150, and 200 W were used for the deposition of the Ni film on an n/p silicon substrate. RMS roughnesses of 1.354, 1.174 and 1.338 nm were obtained at 100, 150, and 200 W, respectively. A circular transmission line model (CTLM) pattern was used to obtain the contact resistance for three different RF-power-deposited films. The lowest contact resistivity of 5.84 × 10−5 Ω-cm2 was obtained for the NiSi/n-Si substrate for Ni film deposited at 150 W RF power. View Full-Text
Keywords: deposition rate; contact resistance; nickel silicide; radio frequency deposition rate; contact resistance; nickel silicide; radio frequency
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Eadi, S.B.; Song, H.-S.; Song, H.-D.; Oh, J.; Lee, H.-D. Nickel Film Deposition with Varying RF Power for the Reduction of Contact Resistance in NiSi. Coatings 2019, 9, 349.

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