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Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer

Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
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Nanomaterials 2019, 9(5), 697; https://doi.org/10.3390/nano9050697
Received: 24 February 2019 / Revised: 25 April 2019 / Accepted: 29 April 2019 / Published: 4 May 2019
(This article belongs to the Special Issue Design and Development of Nanostructured Thin Films)
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Abstract

Effects of the La2O3 passivation layer thickness on the interfacial properties of high-k/Ge interface are investigated systematically. In a very thin range (0~15 cycles), the increase of La2O3 passivation layer deposition cycles improves the surface smoothness of HfO2/Ge structures. The capacitance-voltage (C-V) characteristics show that the thickness of La2O3 passivation layer can affect the shift of flat band voltage (VFB), hysteretic behaviors, and the shapes of the dual-swept C-V curves. Moreover, significant improvements in the gate leakage current and breakdown characteristics are also achieved with the increase of La2O3 interlayer thickness. View Full-Text
Keywords: Ge surface engineering; La2O3 passivation layer; atomic layer deposition; electrical properties Ge surface engineering; La2O3 passivation layer; atomic layer deposition; electrical properties
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Zhao, L.; Liu, H.; Wang, X.; Wang, Y.; Wang, S. Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3 Interlayer. Nanomaterials 2019, 9, 697.

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