Endoh, N.; Akiyama, S.; Tashima, K.; Suwa, K.; Kamogawa, T.; Kohama, R.; Funakubo, K.; Konishi, S.; Mogi, H.; Kawahara, M.;
et al. High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications. Nanomaterials 2021, 11, 392.
https://doi.org/10.3390/nano11020392
AMA Style
Endoh N, Akiyama S, Tashima K, Suwa K, Kamogawa T, Kohama R, Funakubo K, Konishi S, Mogi H, Kawahara M,
et al. High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications. Nanomaterials. 2021; 11(2):392.
https://doi.org/10.3390/nano11020392
Chicago/Turabian Style
Endoh, Norifumi, Shoji Akiyama, Keiichiro Tashima, Kento Suwa, Takamasa Kamogawa, Roki Kohama, Kazutoshi Funakubo, Shigeru Konishi, Hiroshi Mogi, Minoru Kawahara,
and et al. 2021. "High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications" Nanomaterials 11, no. 2: 392.
https://doi.org/10.3390/nano11020392
APA Style
Endoh, N., Akiyama, S., Tashima, K., Suwa, K., Kamogawa, T., Kohama, R., Funakubo, K., Konishi, S., Mogi, H., Kawahara, M., Kawai, M., Kubota, Y., Ohkochi, T., Kotsugi, M., Horiba, K., Kumigashira, H., Suemitsu, M., Watanabe, I., & Fukidome, H.
(2021). High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications. Nanomaterials, 11(2), 392.
https://doi.org/10.3390/nano11020392
