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Open AccessArticle

Piezoelectric BiFeO3 Thin Films: Optimization of MOCVD Process on Si

Dipartimento di Scienze Chimiche, Università degli Studi di Catania, INSTM UdR Catania, Viale Andrea Doria 6, I-95125 Catania, Italy
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Nanomaterials 2020, 10(4), 630; https://doi.org/10.3390/nano10040630
Received: 29 February 2020 / Revised: 24 March 2020 / Accepted: 25 March 2020 / Published: 28 March 2020
This paper presents a simple and optimized metal organic chemical vapor deposition (MOCVD) protocol for the deposition of perovskite BiFeO3 films on silicon-based substrates, in order to move toward the next generation of lead-free hybrid energy harvesters. A bi-metal mixture that is composed of Bi(phenyl)3, and Fe(tmhd)3 has been used as a precursor source. BiFeO3 films have been grown by MOCVD on IrO2/Si substrates, in which the conductive IrO2 functions as a bottom electrode and a buffer layer. BiFeO3 films have been analyzed by X-ray diffraction (XRD) for structural characterization and by field-emission scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray (EDX) analysis for the morphological and chemical characterizations, respectively. These studies have shown that the deposited films are polycrystalline, pure BiFeO3 phase highly homogenous in morphology and composition all over the entire substrate surface. Piezoelectric force microscopy (PFM) and Piezoelectric Force Spectroscopy (PFS) checked the piezoelectric and ferroelectric properties of the film. View Full-Text
Keywords: BiFeO3; MOCVD; Si substrate; thin film; perovskite; lead-free piezoelectric; energy harvesting BiFeO3; MOCVD; Si substrate; thin film; perovskite; lead-free piezoelectric; energy harvesting
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MDPI and ACS Style

Micard, Q.; Condorelli, G.G.; Malandrino, G. Piezoelectric BiFeO3 Thin Films: Optimization of MOCVD Process on Si. Nanomaterials 2020, 10, 630.

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