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Open AccessArticle

Atomic Layer Deposition for Preparing Isolated Co Sites on SiO2 for Ethane Dehydrogenation Catalysis

1
Chemical & Biomolecular Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
2
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA
3
Catalysis Center for Energy Innovation, Newark, DE 19716, USA
*
Author to whom correspondence should be addressed.
Nanomaterials 2020, 10(2), 244; https://doi.org/10.3390/nano10020244
Received: 31 December 2019 / Revised: 27 January 2020 / Accepted: 28 January 2020 / Published: 30 January 2020
Unlike Co clusters, isolated Co atoms have been shown to be selective for catalytic dehydrogenation of ethane to ethylene; however, preparation of isolated Co sites requires special preparation procedures. Here, we demonstrate that Atomic Layer Deposition (ALD) of tris(2,2,6,6-tetramethyl-3,5-heptanedionato)cobalt(III) (Co(TMHD)3) on silica and other supports is effective in producing these isolated species. Silica-supported catalysts prepared with one ALD cycle showed ethylene selectivities greater than 96% at 923 K and were stable when CO2 was co-fed with the ethane. Co catalysts prepared by impregnation formed clusters that were significantly less active, selective, and stable. Rates and selectivities also decreased for catalysts with multiple ALD cycles. Isolated Co catalysts prepared on Al2O3 and MgAl2O4 showed reasonable selectivity for ethane dehydrogenation but were not as effective as their silica counterpart.
Keywords: ethane dehydrogenation; cobalt; silica; atomic layer deposition (ALD); Co/SiO2; oxidative dehydrogenation; single-site catalysts ethane dehydrogenation; cobalt; silica; atomic layer deposition (ALD); Co/SiO2; oxidative dehydrogenation; single-site catalysts
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MDPI and ACS Style

Huang, R.; Cheng, Y.; Ji, Y.; Gorte, R.J. Atomic Layer Deposition for Preparing Isolated Co Sites on SiO2 for Ethane Dehydrogenation Catalysis. Nanomaterials 2020, 10, 244.

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