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Open AccessLetter

Synthesis of Monolayer MoSe2 with Controlled Nucleation via Reverse-Flow Chemical Vapor Deposition

by Siyuan Wang 1,2,†, Guang Wang 2,*,†, Xi Yang 3, Hang Yang 2, Mengjian Zhu 3, Sen Zhang 2, Gang Peng 2 and Zheng Li 1,*
1
School of Material Science and Engineering, Xiangtan University, Xiangtan 411105, China
2
College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China
3
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
*
Authors to whom correspondence should be addressed.
Siyuan Wang and Guang Wang contributed equally to this work.
Nanomaterials 2020, 10(1), 75; https://doi.org/10.3390/nano10010075
Received: 1 December 2019 / Revised: 24 December 2019 / Accepted: 25 December 2019 / Published: 31 December 2019
(This article belongs to the Special Issue Characterization, Synthesis and Applications of 2D Nanomaterials)
Two-dimensional (2D) layered semiconductor materials, such as transition metal dichalcogenides (TMDCs), have attracted considerable interests because of their intriguing optical and electronic properties. Controlled growth of TMDC crystals with large grain size and atomically smooth surface is indeed desirable but remains challenging due to excessive nucleation. Here, we have synthesized high-quality monolayer, bilayer MoSe2 triangular crystals, and continuous thin films with controlled nucleation density via reverse-flow chemical vapor deposition (CVD). High crystallinity and good saturated absorption performance of MoSe2 have been systematically investigated and carefully demonstrated. Optimized nucleation and uniform morphology could be achieved via fine-tuning reverse-flow switching time, growth time and temperature, with corresponding growth kinetics proposed. Our work opens up a new approach for controllable synthesis of monolayer TMDC crystals with high yield and reliability, which promote surface/interface engineering of 2D semiconductors towards van der Waals heterostructure device applications. View Full-Text
Keywords: transition metal dichalcogenides (TMDCs); MoSe2; controlled growth; reverse-flow chemical vapor deposition (CVD) transition metal dichalcogenides (TMDCs); MoSe2; controlled growth; reverse-flow chemical vapor deposition (CVD)
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Wang, S.; Wang, G.; Yang, X.; Yang, H.; Zhu, M.; Zhang, S.; Peng, G.; Li, Z. Synthesis of Monolayer MoSe2 with Controlled Nucleation via Reverse-Flow Chemical Vapor Deposition. Nanomaterials 2020, 10, 75.

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