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Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD

1
Air Force Research Laboratory, Sensor Directorate, 2241 Avionics Circle, Wright Patterson AFB, OH 45433, USA
2
KBR, 2241 Avionics Circle, Wright Patterson AFB, OH 45433, USA
3
Air Force Research Laboratory, Materials and Manufacturing Directorate, 2941 Hobson Way, Wright Patterson AFB, OH 45433, USA
4
University of Dayton, Department of Chemical and Materials Engineering, 300 College Park, Dayton, OH 45469, USA
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(7), 339; https://doi.org/10.3390/cryst9070339
Received: 5 June 2019 / Revised: 24 June 2019 / Accepted: 29 June 2019 / Published: 2 July 2019
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Abstract

In this paper we demonstrate a metal organic chemical vapor deposition (MOCVD) process for growth of few layer hBN films on Ni(111) on sapphire substrates using triethylborane (TEB) and ammonia (NH3). Ni(111) was selected as a substrate due to its symmetry and close lattice matching to hBN. Using atomic force microscopy (AFM) we find hBN is well aligned to the Ni below with in plane alignment between the hBN zig zag edge and the <110> of Ni. We further investigate the growth process exploring interaction between precursors and the Ni(111) substrate. Under TEB pre-exposure Ni-B and graphitic compounds form which disrupts the formation of layered phase pure hBN; while NH3 pre-exposure results in high quality films. Tunnel transport of films was investigated by conductive-probe AFM demonstrating films to be highly resistive. These findings improve our understanding of the chemistry and mechanisms involved in hBN growth on metal surfaces by MOCVD. View Full-Text
Keywords: MOCVD; hBN; thin film; 2D materials MOCVD; hBN; thin film; 2D materials
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MDPI and ACS Style

Siegel, G.; Gryzbowcki, G.; Hilton, A.; Muratore, C.; Snure, M. Growth of Multi-Layer hBN on Ni(111) Substrates via MOCVD. Crystals 2019, 9, 339.

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