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Crystals 2019, 9(3), 131; https://doi.org/10.3390/cryst9030131

Determination of Diffusion Coefficient of Copper in ZnO (001) Single Crystals at 1000 °C

1
Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Ciudad Universitaria, C.P. 72570 Puebla, Mexico
2
Facultad de Ciencias de la Computación, Benemérita Universidad Autónoma de Puebla, Av. San Claudio y 14 Sur, Ciudad Universitaria, C.P. 72570 Puebla, Mexico
3
Sección de Electrónica de Estado Sólido, Centro de Investigación y de Estudios Avanzados del I. P. N, Av. Instituto Politécnico Nacional No. 2508, Col. San Pedro Zacatenco, C.P. 07360 Ciudad de México, Mexico
*
Author to whom correspondence should be addressed.
Received: 31 December 2018 / Revised: 22 February 2019 / Accepted: 27 February 2019 / Published: 6 March 2019
(This article belongs to the Section Crystalline Materials)
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Abstract

Copper from a solid source was diffused into undoped n-type bulk ZnO (001) single crystals at 1000 °C under a nitrogen atmosphere at different diffusion times. The Cu diffusion profiles were obtained by Secondary ion mass spectroscopy (SIMS), and the fitting reveals a diffusion case from a constant concentration source. A value for the diffusion coefficient of 2.42(±0.2) × 10−12 cm2∙s−1 was obtained. Electrical measurements present an increment of carrier concentration with diffusion time, but remains n-type which indicates an increase in the donor levels produced by structural defects in ZnO. Photoluminescence (PL) spectra showed an increment of green emission intensity associated with Cu incorporation. View Full-Text
Keywords: Zinc oxide; copper diffusion; SIMS; hall effect; PL Zinc oxide; copper diffusion; SIMS; hall effect; PL
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López-Salazar, P.; Juárez-Díaz, G.; Martínez-Juárez, J.; Luna-López, J.A.; Peña Sierra, R.; Koudriavtsev, Y.; Palomino-Jiménez, C.; Rodríguez-Victoria, A.P. Determination of Diffusion Coefficient of Copper in ZnO (001) Single Crystals at 1000 °C. Crystals 2019, 9, 131.

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