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Crystals 2019, 9(3), 130;

Property Improvement of GaAs Surface by 1-Octadecanethiol Passivation

Jilin Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving, School of Electrical Engineering and Computer, Jilin Jianzhu University, Changchun 130118, China
Author to whom correspondence should be addressed.
Received: 21 January 2019 / Revised: 28 February 2019 / Accepted: 28 February 2019 / Published: 5 March 2019
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In this study the effects of 1-Octadecanethiol (ODT, 1-CH3 [CH2]17SH) passivation on GaAs (100) surface and GaAs/Al2O3 MOS capacitors are investigated. The results measured by X-ray photoelectric spectroscopy (XPS), Raman spectroscopy and scan electron microscopy (SEM) show that the ODT passivation can obviously suppress the formation of As-O bonds and Ga-O bonds on the GaAs surface and produce good surface morphology at the same time, and especially provide better protection against environmental degradation for at least 24 h. The passivation time is optimized by photoluminescence (PL), and the maximum enhancement of PL intensity was 116%. Finally, electrical property of a lower leakage current was measured using the metal-oxide-semiconductor capacitor (MOSCAP) method. The results confirm the effectiveness of ODT passivation on GaAs (100) surface. View Full-Text
Keywords: GaAs; passivation; XPS; RAMAN; PL GaAs; passivation; XPS; RAMAN; PL

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Zhou, L.; Chu, X.; Chi, Y.; Yang, X. Property Improvement of GaAs Surface by 1-Octadecanethiol Passivation. Crystals 2019, 9, 130.

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