Article Versions Notes

Luo X, Li Y, Yang H, Liang Y, He K, Sun W, Lin H-H, Yao S, Lu X, Wan L, et al. Investigation of HfO₂ Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry. Crystals. 2018; 8(6):248. https://doi.org/10.3390/cryst8060248

Luo, Xuguang, Yao Li, Hong Yang, Yuanlan Liang, Kaiyan He, Wenhong Sun, Hao-Hsiung Lin, Shude Yao, Xiang Lu, Lingyu Wan, and et al. 2018. "Investigation of HfO₂ Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry" Crystals 8, no. 6: 248. https://doi.org/10.3390/cryst8060248

Luo, X., Li, Y., Yang, H., Liang, Y., He, K., Sun, W., Lin, H.-H., Yao, S., Lu, X., Wan, L., & Feng, Z. (2018). Investigation of HfO₂ Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry. Crystals, 8(6), 248. https://doi.org/10.3390/cryst8060248