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Crystals 2018, 8(11), 418; https://doi.org/10.3390/cryst8110418

Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications

1
Department of Materials Science and Engineering, Innovation and Development Center of Sustainable Agriculture, Research Center for sustainable energy and Nanotechnology, National Chung Hsing University, No. 145, Xingda Road, South Dist., Taichung 402, Taiwan
2
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli Township, Nantou County 545, Taiwan
3
Department of Chemical Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan
*
Author to whom correspondence should be addressed.
Received: 29 September 2018 / Revised: 2 November 2018 / Accepted: 4 November 2018 / Published: 7 November 2018
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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Abstract

An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/GaN reflector through an electrochemical wet-etching process. Porous GaN layers surrounding the mesa region were transformed into insulating GaOx layers in a reflector structure through a lateral photoelectrochemical (PEC) oxidation process. The electroluminescence emission intensity was localized at the central mesa region by forming the insulating GaOx layers in a reflector structure as a current confinement aperture structure. The PEC-LED structure with a porous GaN reflector and a current-confined aperture surrounded by insulating GaOx layers has the potential for nitride-based resonance cavity light source applications. View Full-Text
Keywords: InGaN; porous GaN; insulating GaOx; current confinement aperture structure InGaN; porous GaN; insulating GaOx; current confinement aperture structure
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Chen, Y.-Y.; Jhang, Y.-C.; Wu, C.-J.; Chen, H.; Lin, Y.-S.; Lin, C.-F. Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications. Crystals 2018, 8, 418.

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