Next Article in Journal
Fabrication and Optical Properties of 2at.%Yb:LuYAG Mixed Crystal through Nanocrystalline Powders
Next Article in Special Issue
Research on the High-Performance Electrochemical Energy Storage of a [email protected] (NZO) Hybrid Based on Growth Time
Previous Article in Journal
Effect of Additives on the Morphologies of Hydrothermal Products Prepared from Semi-Dry Desulfurization Residues
Previous Article in Special Issue
Highly Visible Photoluminescence from Ta-Doped Structures of ZnO Films Grown by HFCVD
Article Menu
Issue 11 (November) cover image

Export Article

Open AccessArticle
Crystals 2018, 8(11), 418;

Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications

Department of Materials Science and Engineering, Innovation and Development Center of Sustainable Agriculture, Research Center for sustainable energy and Nanotechnology, National Chung Hsing University, No. 145, Xingda Road, South Dist., Taichung 402, Taiwan
Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli Township, Nantou County 545, Taiwan
Department of Chemical Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan
Author to whom correspondence should be addressed.
Received: 29 September 2018 / Revised: 2 November 2018 / Accepted: 4 November 2018 / Published: 7 November 2018
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
Full-Text   |   PDF [2726 KB, uploaded 7 November 2018]   |  


An indium gallium nitride (InGaN) light-emitting diode (LED) with an embedded porous GaN reflector and a current confined aperture is presented in this study. Eight pairs of n+-GaN:Si/GaN in stacked structure are transformed into a conductive, porous GaN/GaN reflector through an electrochemical wet-etching process. Porous GaN layers surrounding the mesa region were transformed into insulating GaOx layers in a reflector structure through a lateral photoelectrochemical (PEC) oxidation process. The electroluminescence emission intensity was localized at the central mesa region by forming the insulating GaOx layers in a reflector structure as a current confinement aperture structure. The PEC-LED structure with a porous GaN reflector and a current-confined aperture surrounded by insulating GaOx layers has the potential for nitride-based resonance cavity light source applications. View Full-Text
Keywords: InGaN; porous GaN; insulating GaOx; current confinement aperture structure InGaN; porous GaN; insulating GaOx; current confinement aperture structure

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Chen, Y.-Y.; Jhang, Y.-C.; Wu, C.-J.; Chen, H.; Lin, Y.-S.; Lin, C.-F. Fabrication of GaOx Confinement Structure for InGaN Light Emitter Applications. Crystals 2018, 8, 418.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Crystals EISSN 2073-4352 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top