Search Results (146)

A wide-bandgap AgInGaSe₂ (AIGS) thin film was fabricated using molecular beam epitaxy (MBE) via a three-stage method. The influence of Selenium (Se) pressure on the properties of AIGS films and solar cells was studied in detail. It was found that Se pressure played a very important role during the fabrication process, whereby Se pressure was varied from 0.8 × 10⁻³ Torr to 2.5 × 10⁻³ Torr in order to specify the effect of Se pressure. A two-stage mechanism during the production of AIGS solar cells was concluded according to the experimental results. With an increase in Se pressure, the grain size significantly increased due to the supply of the Ag–Se phase; the superficial roughness also increased. When Se pressure was increased to 2.1 × 10⁻³ Torr, the morphology of AIGS changed abruptly and clear grain boundaries were observed with a typical grain size of over 1.5 μm. AIGS films fabricated with a low Se pressure tended to show a higher bandgap due to the formation of anti-site defects such as In and Ga on Ag sites as a result of the insufficient Ag–Se phase. With an increase in Se pressure, the crystallinity of the AIGS film changed from the (220)-orientation to the (112)-orientation. When Se pressure was 2.1 × 10⁻³ Torr, the AIGS solar cell demonstrated its best performance of about 9.6% (Voc: 810.2 mV; Jsc: 16.7 mA/cm²; FF: 71.1%) with an area of 0.2 cm². Full article

Magnetic shape memory alloys have attracted considerable attention due to their multifunctional properties. Among these materials, Ni-Mn-Ga alloys are distinguished by their ability to achieve up to 10% strain when exposed to a magnetic field, a characteristic predominantly observed in single-crystal samples. Consequently, it is essential to develop nanomaterials with a crystal structure closely resembling that of a single crystal. In this study, an epitaxial Ni-Mn-Ga thin film was fabricated using Pulsed Laser Deposition on an Al₂O₃ $\left(11\overline{2}0\right)$ single-crystal substrate. The crystal structure was characterised through X-ray diffraction methodologies, such as symmetrical $2\theta -\omega$ scans, pole figures, and reciprocal space maps. The results indicated that the sample was mainly in a slightly distorted cubic austenite phase, and some incipient martensite phase also appeared. A detailed microstructural analysis, performed by transmission electron microscopy, confirmed that certain regions of the sample exhibited an incipient transformation to the martensite phase. Regions closer to the substrate retained the austenite phase, suggesting that the constraint imposed by the substrate inhibits the phase transition. These results indicate that it is possible to grow high crystalline quality thin films of Ni-Mn-Ga by Pulsed Laser Deposition. Full article

Gallium nitride (GaN) is commonly used in various semiconductor systems owing to its high mobility and thermal stability; however, the production of GaN thin films using the currently employed methods requires improvement. To facilitate the growth of high-quality GaN epitaxial thin films, this study explored the crystallographic structures, properties, and influences of chromium nitride (CrN) buffer layers sputtered under various conditions. The crystallographic orientation of CrN played a crucial role in determining the GaN film quality. For example, even when the crystallinity of the CrN (111) plane was relatively low, a single-phase CrN (111) buffer layer could provide a more favorable template for GaN epitaxy compared to cases where both the CrN (111) and Cr₂N (110) phases coexisted. The significance of a low-temperature (LT) GaN nucleation layer deposited onto the CrN buffer layers was assessed using atomic force microscopy and contact angle measurements. The X-ray phi scan results confirmed the six-fold symmetry of the grown GaN, further emphasizing the contribution of an LT-GaN nucleation layer. These findings offer insights into the underlying mechanisms governing GaN thin film growth and provide guidance for the optimization of the buffer layer conditions to achieve high-quality GaN epitaxial films. Full article

Residual stresses in multilayer thin coatings represent a complex multiscale phenomenon arising from the intricate interplay of multiple factors, including the number and thickness of layers, material properties of the layers and substrate, coefficient of thermal expansion (CTE) mismatch, deposition technique and growth mechanism, as well as process parameters and environmental conditions. A multiscale approach to residual stress measurement is essential for a comprehensive understanding of stress distribution in such systems. To investigate this, two AlGaN/GaN multilayer coatings with distinct layer architectures were deposited on sapphire substrates using metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction (HRXRD) was employed to confirm their epitaxial growth and structural characteristics. Focused ion beam (FIB) cross-sectioning and transmission electron microscopy (TEM) lamella preparation were performed to analyze the coating structure and determine layer thickness. Residual stresses within the multilayer coatings were evaluated using two complementary techniques: High-Resolution Scanning Transmission Electron Microscopy—Graphical Phase Analysis (HRSTEM-GPA) and Focused Ion Beam—Digital Image Correlation (FIB-DIC). HRSTEM-GPA enables atomic-resolution strain mapping, making it particularly suited for investigating interface-related stresses, while FIB-DIC facilitates microscale stress evaluation. The residual strain values obtained using the FIB-DIC and HRSTEM-GPA methods were −3.2 × 10⁻³ and −4.55 × 10⁻³, respectively. This study confirms that residual stress measurements at different spatial resolutions are both reliable and comparable at the required coating depths and locations, provided that a critical assessment of the characteristic scale of each method is performed. Full article

Ultra-high-temperature (>1500 °C) sensors play vital roles in ensuring operational excellence in variety of energy-related applications, such as power plant boilers and gas turbine engines. Crystalline sapphire fibers have enormous potential to replace conventional expensive precious metal (e.g., Pt/Rh)-based high-temperature (>1500 °C) sensors by offering higher environmental robustness and distributed sensing capabilities. However, a lack of proper cladding substantially compromises the performance of the sensor. To overcome this fundamental limitation, we develop a hybrid growing method to fabricate low-loss clad crystalline sapphire fibers. We grow a higher-refractive-index doped crystalline sapphire fiber core using the laser-heated pedestal growth (LHPG) method and lower-refractive-index undoped crystalline sapphire fiber cladding using the liquid-phase epitaxy (LPE) method. Furthermore, due to the existence of this cladding layer, a single mode of operation can be achieved at a core diameter size of 30 μm. The experimental results confirm that the grown clad crystalline sapphire fiber can survive in extremely high-temperature (>1500 °C) harsh environments due to the matched coefficient of thermal expansion (CTE) between the fiber core and the cladding. The numerical results also indicate a temperature sensing accuracy of 3.5 °C. This opens the door for developing point and distributed fiber sensor networks capable of enduring extremely harsh environments at extremely high temperatures. Full article

III-nitrides are crucial materials for solar flow batteries due to their versatile properties. In contrast to the well-studied MOVPE reaction mechanism for AlN and GaN, few works report gas-phase mechanistic studies on the growth of InN. To better understand the reaction thermodynamics, this work revisited the gas-phase reactions involved in metal–organic vapor-phase epitaxy (abbreviated as MOVPE) growth of InN. Utilizing the M06-2X function in conjunction with Pople’s triple-ζ split-valence basis set with polarization functions, this work recharacterized all stationary points reported in previous literature and compared the differences between the structures and reaction energies. For the reaction pathways which do not include a transition state, rigorous constrained geometry optimizations were utilized to scan the PES connecting the reactants and products in adduct formation and XMIn (M, D, T) pyrolysis, confirming that there are no TSs in these pathways, which is in agreement with the previous findings. A comprehensive bonding analysis indicates that in TMIn:NH₃, the In-N demonstrates strong coordinate bond characteristics, whereas in DMIn:NH₃ and MMIn:NH₃, the interactions between the Lewis acid and base fragments lean toward electrostatic attraction. Additionally, the NBO computations show that the H radical can facilitate the migration of electrons that are originally distributed between the In-C bonds in XMIn. Based on this finding, novel reaction pathways were also investigated. When the H radical approaches MMInNH₂, MMIn:NH₃ rather than MMInHNH₂ will generate and this is followed by the elimination of CH₄ via two parallel paths. Considering the abundance of H₂ in the environment, this work also examines the reactions between H₂ and XMIn. The Mulliken charge distributions indicated that intermolecular electron transfer mainly occurs between the In atom and N atom whiling forming (DMInNH₂)₂, whereas it predominately occurs between the In atom and the N atom intramolecularly when generating (DMInNH₂)₃. Full article

Aluminum nitride (AlN)-based ferroelectric films offer significant advantages, including compatibility with CMOS back-end processes, potential for sustainable miniaturization, and intrinsic stability in the ferroelectric phase. As promising emerging materials, they have attracted considerable attention for their broad application potential in nonvolatile ferroelectric memories. However, several key scientific and technological challenges remain, including the preparation of single-crystal materials, epitaxial growth, and doping, which hinder their progress in critical ferroelectric devices. To accelerate their development, further research is needed to elucidate the underlying physical mechanisms, such as growth dynamics and ferroelectric properties. This paper provides a comprehensive review of the preparation methods of AlN-based ferroelectric films, covering AlN, Al_1−xSc_xN, Al_1−xB_xN, Y_xAl_1−xN, and Sc_xAl_yGa_1−x−yN. We systematically analyze the similarities, differences, advantages, and limitations of various growth techniques. Furthermore, the ferroelectric properties of AlN and its doped variants are summarized and compared. Strategies for enhancing the ferroelectric performance of AlN-based films are discussed, with a focus on coercive field regulation under stress, suppression of leakage current, fatigue mechanism, and long-term stability. Then, a brief overview of the wide range of applications of AlN-based thin films in electronic and photonic devices is presented. Finally, the challenges associated with the commercialization of AlN-based ferroelectrics are presented, and critical issues for future research are outlined. By synthesizing insights on growth methods, ferroelectric properties, enhancement strategies, and applications, this review aims to facilitate the advancement and practical application of AlN-based ferroelectric materials and devices. Full article

In situ X-ray reciprocal space mapping was performed during the interval heating and cooling of InGaN/GaN quantum wells (QWs) grown via metal–organic vapor phase epitaxy (MOVPE). Our detailed in situ X-ray analysis enabled us to track changes in the peak intensities and radial and angular broadenings of the reflection. By simulating the radial diffraction profiles recorded during the thermal cycle treatment, we demonstrate the presence of indium concentration distributions (ICDs) in the different QWs of the heterostructure (1. QW, bottom, 2. QW, middle, and 3. QW, upper). During the heating process, we found that the homogenization of the QWs occurred in the temperature range of 850 °C to 920 °C, manifesting in a reduction in ICDs in the QWs. Furthermore, there is a critical temperature (T = 940 °C) at which the mean value of the indium concentration starts to decrease below 15% in 1. QW, indicating the initiation of decomposition in 1. QW. Moreover, further heating up to 1000 °C results in extended diffuse scattering along the angular direction of the diffraction spot, confirming the propagation of the decomposition and the formation of trapezoidal objects, which contain voids and amorphous materials (In-Ga). Heating InGaN QWs up to T = 1000 °C led to a simultaneous decrease in the indium content and ICDs. During the cooling phase, there was no significant variation in the indium concentrations in the different QWs but rather an increase in the defect area, which contributes to the amplification of diffuse scattering. A comparison of ex situ complementary high-resolution transmission microscopy (Ex-HRTEM) measurements performed at room temperature before and after the thermal cycle treatment provides proof of the formation of four different types of defects in the QWs, which result from the decomposition of 1. QW during the heating phase. This, in turn, has strongly influenced the intensity of the photoluminescence emission spectra without any detectable shift in the emission wavelength λ_MQWs. Full article

Narrow-gap InN is a desirable candidate for near-infrared (NIR) optical communication applications. However, the absence of lattice-matched substrates impedes the fabrication of high-quality InN. In this paper, we employed Molecular Beam Epitaxy (MBE) to grow nanostructured InN with distinct growth mechanisms. Morphological and quality analysis showed that the liquid phase epitaxial (LPE) growth of hexagonal InN nanopillar could be realized by depositing molten In layer on large lattice-mismatched sapphire substrate; nevertheless, InN nanonetworks were formed on nitrided sapphire and GaN substrates through the vapor-solid process under the same conditions. The supersaturated precipitation of InN grains from the molten In layer effectively reduced the defects caused by lattice mismatch and suppressed the introduction of non-stoichiometric metal In in the epitaxial InN. Photoluminescence and electrical characterizations demonstrated that high-carrier concentration InN prepared by vapor-solid mechanism showed much stronger band-filling effect at room temperature, which significantly shifted its PL peak to higher energy. LPE InN displayed the strongest PL intensity and the smallest wavelength shift with increasing temperature from 10 K to 300 K. These results showed enhanced optical properties of InN nanostructures prepared on large lattice mismatch substrates, which will play a crucial role in near-infrared optoelectronic devices. Full article

Nitrogenous nickel-based deposited metal was prepared by using the gas metal arc welding (GMAW) method, and it was further subjected to solid-solution and aging heat treatment. The influence of different solid-solution temperatures on the microstructure of the deposited metal was studied, and the complete heat treatment system for the nitrogenous nickel-based deposited metal was ultimately determined. The microstructure, mechanical properties, and deformation mechanism of the nitrogenous nickel-based deposited metal in two states (as-prepared state and complete heat-treated state) were finally investigated. The results show that the microstructure of the deposited metal mainly consisted of epitaxially grown columnar grains with large grains. Petal-like Laves phases formed between the dendrites. The main deformation mechanism was the unit dislocation a/2<110> cut precipitation phase. After a complete heat treatment, all the Laves phases were re-melted, and nanoscale M(C,N) phases precipitated in the grains, while M₂₃C₆ phases formed at the grain boundaries. The samples showed higher yield and ultimate tensile strengths than those of the as-prepared state metal, but with reduced ductility. The deformation mechanism involved not only a/2<110> matrix dislocations cutting the precipitated phase, but also two a/6<121> Shockley incomplete dislocations, together cutting the precipitated phase to form a stacking layer dislocation. Full article

Hexagonal boron nitride (h-BN) is recognized as a 2D wide bandgap material with unique properties, such as effective photoluminescence and diverse lattice parameters. Nitride alloys containing h-BN have the potential to revolutionize the electronics and optoelectronics industries. The energy band structures of three boron-containing nitride alloys—B_xAl_1−xN, B_xGa_1−xN, and B_xIn_1−xN—were calculated using standard density functional theory (DFT) with the hybrid Heyd–Scuseria–Ernzerhof (HSE) function to correct lattice parameters and energy gaps. The results for both wurtzite and hexagonal structures reveal several notable characteristics, including a wide range of bandgap values, the presence of both direct and indirect bandgaps, and phase mixing between wurtzite and hexagonal structures. The hexagonal phase in these alloys is observed at very low and very high boron concentrations (x), as well as in specific atomic configurations across the entire composition range. However, cohesive energy calculations show that the hexagonal phase is more stable than the wurtzite phase only when x > 0.5, regardless of atomic arrangement. These findings provide practical guidance for optimizing the epitaxial growth of boron-containing nitride thin films, which could drive future advancements in electronics and optoelectronics applications. Full article

In this paper, we present various theoretical models that accurately approximate the spectral density of the optical capture cross-section (${\sigma }_e^0$) obtained through the analysis of photo-capacitance transients using the deep-level optical spectroscopy (DLOS) technique applied to semi-transparent Ni/Au Schottky barrier diodes (SBDs) fabricated on n-GaN films. The theoretical models examined in this study involved a variety of approaches, from the Lucovsky model that assumes no lattice relaxation to more sophisticated models such as the Chantre–Bois and the Pässler models, which consider the electron–phonon coupling phenomenon. By applying theoretical models to the experimentally determined data, we were able to estimate the photoionization (E⁰), trap level position (E_T), and Franck–Condon (d_FC) energy, respectively. In addition, the results of our analysis confirm that the photoionization processes of deep traps in n-GaN grown by the metal–organic vapor-phase epitaxy technique (MOVPE) are strongly coupled to the lattice. Moreover, it was shown that the Pässler model is preferred for the accurate determination of the individual trap parameters of defects present in n-GaN films grown on an Ammono-GaN substrate. Finally, a new trap level, Ec-1.99 eV with d_FC = 0.15, that has not been previously reported in n-GaN films grown by MOVPE was found. Full article

Metal oxide core–shell fibrous nanostructures are promising gas-sensitive materials for the detection of a wide variety of both reducing and oxidizing gases. In these structures, two dissimilar materials with different work functions are brought into contact to form a coaxial heterojunction. The influence of the shell material on the transportation of the electric charge carriers along these structures is still not very well understood. This is due to homo-, hetero- and metal/semiconductor junctions, which make it difficult to investigate the electric charge transfer using direct current methods. However, in order to improve the gas-sensing properties of these complex structures, it is necessary to first establish a good understanding of the electric charge transfer in ambient air. In this article, we present an impedance spectroscopy study of networked SnO₂/Ga₂O₃ core–shell nanobelts in ambient air. Tin dioxide nanobelts were grown directly on interdigitated gold electrodes, using the thermal sublimation method, via the vapor–liquid–solid (VLS) mechanism. Two forms of a gallium oxide shell of varying thickness were prepared via halide vapor-phase epitaxy (HVPE), and the impedance spectra were measured at 189–768 °C. The bulk resistance of the core–shell nanobelts was found to be reduced due to the formation of an electron accumulation layer in the SnO₂ core. At temperatures above 530 °C, the thermal reduction of SnO₂ and the associated decrease in its work function caused electrons to flow from the accumulation layer into the Ga₂O₃ shell, which resulted in an increase in bulk resistance. The junction resistance of said core–shell nanostructures was comparable to that of SnO₂ nanobelts, as both structures are likely connected through existing SnO₂/SnO₂ homojunctions comprising thin amorphous layers. Full article

We report on 2-dimensional electron gases realized in binary N-polar GaN channels on AlN on sapphire templates grown by metal–organic vapor phase epitaxy. The measured sheet carrier density of $3.8\times {10}^{13}$ cm⁻² is very close to the theoretical value of $3.95\times {10}^{13}$ cm⁻² due to the low carbon and oxygen background doping in the N-polar GaN if grown with triethyl-gallium. By inserting an intermediate AlN transition layer, room temperature mobilities in 5 nm channels up to 100 cm²/Vs were realized, probably limited by dislocations and oxygen background in N-polar AlN. Thicker channels of 8 nm or more showed relaxation and thus much lower mobilities. Full article

Gallium nitride (GaN) semiconductors and their broadband InGaN alloys in their hexagonal phase have been extensively studied over the past 30 years and have allowed the development of blue-ray lasers, which are essential disruptive developments. In addition to high-efficiency white light-emitting diodes, which have revolutionized lighting technologies and generated a great industry around these semiconductors, several transistors have been developed that take advantage of the characteristics of these semiconductors. These include power transistors for high-frequency applications and high-power transistors for power electronics, among other devices, which have far superior achievements. However, less effort has been devoted to studying GaN and InGaN alloys grown in the cubic phase. The metastable or cubic phase of III-N alloys has superior characteristics compared to the hexagonal phase, mainly because of the excellent symmetry. It can be used to improve lighting technologies and develop other devices. Indium gallium nitride, In_xGa_1−xN alloy, has a variable band interval of 0.7 to 3.4 eV that covers almost the entire solar spectrum, making it a suitable material for increasing the efficiencies of photovoltaic devices. In this study, we successfully synthesized high-quality cubic InGaN films on MgO (100) substrates using plasma-assisted molecular beam epitaxy (PAMBE), demonstrating tunable emissions across the visible spectrum by varying the indium concentration. We significantly reduced the defect density and enhanced the crystalline quality by using an intermediate cubic GaN buffer layer. We not only developed a heterostructure with four GaN/InGaN/GaN quantum wells, achieving violet, blue, yellow, and red emissions, but also highlighted the immense potential of cubic InGaN films for high-efficiency light-emitting diodes and photovoltaic devices. Achieving better p-type doping levels is crucial for realizing diodes with excellent performance, and our findings will pave the way for this advancement. Full article