152 Results Found

Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga–Sb mixture using solid-phase epitaxy at temperatures of 200–500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and...

The development of growth processes for the synthesis of high-quality epitaxial layers is one of the requirements for utilizing the ultrawide band gap semiconductor Ga₂O₃ for high-voltage, high-power electronics. A halide vapor phase epitaxy (HVPE) p...

In this paper, we report the epitaxial growth and material characteristics of AlGaN (Al mole fraction of 10%) on an AlN/nanopatterned sapphire substrate (NPSS) template by hydride vapor phase epitaxy (HVPE). The crystalline quality, surface morpholog...

In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilaye...

Orientation-patterned gallium phosphide (OP-GaP) has been grown heteroepitaxially on OP gallium arsenide (GaAs) templates using hydride vapor phase epitaxy (HVPE). The effect of OP-GaAs template fabrication methods of epitaxial-inversion and wafer bo...

The properties of GaAsSbN and GaAsSb layers grown by liquid-phase epitaxy on n-GaAs substrates were investigated in a comparative plan with a view of their possible application in multi-junction solar cells. To avoid non-uniformity effects in the com...

In this paper, we demonstrate the potential of the contactless surface photovoltage (SPV) method for fast and reliable control of GaAs-based solar cells directly on epitaxial heterostructures before metallization and photolithography processes. The m...

Carbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to the use of organometallic sources. In this study, the impact of growth conditions are explored on the incorporation of carbon in Ga...

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. I...

The present paper focuses on the high-pressure metal-organic vapor phase epitaxy (MOVPE) upside-down vertical reactor (where the inlet of cold gases is below a hot susceptor). This study aims to investigate thermo-kinetic phenomena taking place durin...

We report an example of the realization of a flexible capacitive piezoelectric sensor based on the assembly of horizontal $\overline{c}$-polar long Gallium nitride (GaN) wires grown by metal organic vapour phase epitaxy (MOVPE) with the Boostream^® techn...

Fe/GaAs is an important system for the study of spin injection behavior that can vary with the nature and interfaces of Fe films. Here, we investigate the effect of interfacial strain on the microstructure, interfaces and phase-formation behavior in...

Ultra-high-temperature (>1500 °C) sensors play vital roles in ensuring operational excellence in variety of energy-related applications, such as power plant boilers and gas turbine engines. Crystalline sapphire fibers have enormous potential t...

Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H₂ as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H₂ pulse time, In comp...

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatmen...

Heteroepitaxial Zn-doped p-GaP was grown on (001) GaAs, (001) Si and (111) Si substrates by hydride vapor phase epitaxy for solar-driven photoelectrochemical applications of hydrogen generation by water splitting and CO₂ reduction. Growth of GaP on S...

We have systematically studied the growth of N-polar GaN on sapphire in metal–organic vapor phase epitaxy (MOVPE) on different misoriented (0001) sapphire substrates. The key parameter was the NH${}_3$ flow, which affects the roughness, growth rate,...

Suppression of carbon contamination in GaN films grown using metalorganic vapor phase epitaxy (MOVPE) is a crucial issue in its application to high power and high frequency electronic devices. To know how to reduce the C concentration in the films, a...

In this study, the structural and electrical properties of orthorhombic κ-Ga₂O₃ films prepared using Halide Vapor Phase Epitaxy (HVPE) on AlN/Si and GaN/sapphire templates were studied. For κ-Ga₂O₃/AlN/Si structures, the formation of two-...

In photovoltaic (PV) power generation, highly efficient III-V solar cells are promising for emerging mobile applications, such as vehicle-integrated PVs. Although hydride vapor phase epitaxy (HVPE) has received attention due to its lower fabrication...

Gallium nitride (GaN) semiconductors and their broadband InGaN alloys in their hexagonal phase have been extensively studied over the past 30 years and have allowed the development of blue-ray lasers, which are essential disruptive developments. In a...

Methyltrichlorosilane (CH₃SiCl₃, MTS) has good performance in stoichiometric silicon carbide (SiC) deposition and can be facilitated at relatively lower temperature. Simulations of the chemical vapor deposition in the two-dimensional horizontal hot-w...

We present an extensive theoretical and experimental study to identify the effect on the Raman spectrum due to interface interdiffusion between GaN and AlN layers in short-period GaN/AlN superlattices (SLs). The Raman spectra for SLs with sharp inter...

The major issues confronting the performance of deep-UV (DUV) laser diodes (LDs) are reviewed along with the different approaches aimed at performance improvement. The impact of threading dislocations on the laser threshold current, limitations on he...

This work presents the theoretical calculation of isotherm diagrams for quaternary alloys of III–V semiconductor compounds with the form III_xIII_1−xV_yV_1−y. In particular, the isotherm diagrams for the Al_xGa_1−xAs_ySb_1−y qua...

The quality assurance of hydrogen fuel for mobile applications is assessed by the guidelines and directives given in the European and international standards. However, the presence of impurities in the hydrogen fuel, in particular nitrogen, water, an...

Different growth stages and surface morphology of the epitaxial 3C-SiC/Si(100) structures were studied. Heterocompositions were grown in vacuum from hydric compounds at a lower temperature. The composition, surface morphology and crystal structure of...

A detailed analysis of morphology of gallium nitride crystal growth obtained by ammonothermal and halide vapor phase epitaxy methods was carried out. The work was conducted to determine the source of triangular planar defects visible in X-ray topogra...

We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980–990 nm emission wavelength...

The fabrication of high-efficiency GaAsP-based solar cells on GaAs wafers requires addressing structural issues arising from the materials lattice mismatch. We report on tensile strain relaxation and composition control of MOVPE-grown As-rich GaAs_1&m...

The focus of this study was the investigation of how the total pressure of reactants and ammonia flow rate influence the growth morphology of aluminum–gallium nitride layers crystallized by Halide Vapor Phase Epitaxy. It was established how these two...

The GaN-on-Si virtual substrate is now an indispensable platform for the application of GaN in the fields of power devices, radio frequency, light-emitting devices, etc. Such applications are still in need of more effective stress balancing technique...

This paper presents low-temperature measurements of magnetoresistivity in heavily doped n-type GaN grown by basic GaN growth technologies: molecular beam epitaxy, metal-organic vapor phase epitaxy, halide vapor phase epitaxy and ammonothermal. Additi...

Ga₂O₃, with its large band gap, is a promising material suitable for utilization in solar-blind photodetection. Sapphire with a higher lattice match with Ga₂O₃ was used as the substrate for epitaxial growth of Ga₂O₃. Here, the epitaxial layers of Ga₂...

Beta-phase gallium oxide (β-Ga₂O₃) is a cutting-edge ultrawide bandgap (UWBG) semiconductor, featuring a bandgap energy of around 4.8 eV and a highly critical electric field strength of about 8 MV/cm. These properties make it highly suitable for...

The electric properties and chemical and thermal stability of gallium oxide β-Ga₂O₃ make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of β-Ga₂O₃ still remains...

Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electroni...

Gallium nitride (GaN) is commonly used in various semiconductor systems owing to its high mobility and thermal stability; however, the production of GaN thin films using the currently employed methods requires improvement. To facilitate the growth of...

A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate m...

Single-crystal atomic-layer-deposited (ALD) Y(_{mathrm{2}})O(_{mathrm{3}}) films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 ( imes) 6 and GaAs(111)A-2 ( imes) 2 reconstructed surfaces. The in-plane epitaxy between t...

The 10 at.% Co-substituted BiFeO₃ films (of thickness 50 nm) were successfully prepared by radio frequency (r.f.) magnetron sputtering on SrTiO₃ (100) substrates with epitaxial relationships of [001](001)Co-BiFeO₃//[001](001)SrTiO₃. In this study, a...

In this paper, various Ga₂O₃ films, including amorphous Ga₂O₃ films, β-Ga₂O₃, and α-Ga₂O₃ epitaxial films, have been nitridated and converted to single-crystalline GaN layers on the surface. Although the original Ga₂O₃ films are different,...

We review the surface stability and growth kinetics of III-V and III-nitride semiconductors. The theoretical approach used in these studies is based on ab initio calculations and includes gas-phase free energy. With this method, we can investigate th...

ZnGa₂O₄ is a promising semiconductor for developing high-performance deep-ultraviolet photodetectors owing to a number of advantageous fundamental characteristics. However, Zn volatilization during the ZnGa₂O₄ growth is a widely recognized problem th...

Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devic...

We report a method of growing a boron-doped diamond film by plasma-assisted chemical vapour deposition utilizing a pre-treatment of GaN substrate to give a high density of nucleation. CVD diamond was deposited on GaN substrate grown epitaxially via t...

In this work, the functional character of complex α-Fe₂O₃(0001)/SrTiO₃(111) and Au(111) islands/α-Fe₂O₃(0001)/SrTiO₃(111) heterostructures has been proven as gas sensors at room temperature. Epitaxial Au islands and α-Fe₂O₃ thin film are grown by pul...

Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in...

Epitaxial Ni-Mn-Ga thin films have been extensively investigated, due to their potential applications in magnetic micro-electro-mechanical systems. It has been proposed that the martensitic phase in the <1 1 0>_A-oriented film is much more stabl...

AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (...