Abstract
ZnO thin-film ultraviolet photodetectors are widely used in the military, space, environmental protection, medicine, and other fields. Accurate printing of ZnO photoelectric-sensitive films plays a key role in the detection results. Therefore, obtaining printing technology with a simple process and high precision has become a challenge for ZnO photoelectrically sensitive films. By adjusting the distance between the nozzle and the collecting plate, the jet is atomized in a straight line and deposited directly on the collecting plate, which effectively improves the stability and controllability of the jet spraying and deposition processes. ZnO thin films with a uniform distribution of nanoparticles, significantly improved density, and controllable deposition area linewidth were successfully prepared. The effects of different ZnO film structures on the performance of ultraviolet photodetectors were tested. When the ultraviolet light intensity is 500, 1000, and 2500 mW/cm2, the Ilight of the photodetector is 4.62, 9.38, 14.67 mA, The on/off ratio (Ilight / Idark) is 20.7, 42.1, 65.8, implying satisfactory photoelectric performance as well as high stability and repeatability, providing an effective technical means for the precise printing application of micro-nano functional devices.