Article Versions Notes

Li J, Mao S, Xu Y, Zhao X, Wang W, Guo F, Zhang Q, Wu Y, Zhang B, Chen T, et al. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band. Micromachines. 2018; 9(8):396. https://doi.org/10.3390/mi9080396

Li, Junfeng, Shuman Mao, Yuehang Xu, Xiaodong Zhao, Weibo Wang, Fangjing Guo, Qingfeng Zhang, Yunqiu Wu, Bing Zhang, Tangsheng Chen, and et al. 2018. "An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band" Micromachines 9, no. 8: 396. https://doi.org/10.3390/mi9080396

Li, J., Mao, S., Xu, Y., Zhao, X., Wang, W., Guo, F., Zhang, Q., Wu, Y., Zhang, B., Chen, T., Yan, B., Xu, R., & Li, Y. (2018). An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band. Micromachines, 9(8), 396. https://doi.org/10.3390/mi9080396