An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China

Nanjing Electronic Devices Institute, Nanjing 210016, China

Author to whom correspondence should be addressed.

Micromachines 2018, 9(8), 396; https://doi.org/10.3390/mi9080396

Received: 28 June 2018 / Revised: 4 August 2018 / Accepted: 8 August 2018 / Published: 10 August 2018

(This article belongs to the Special Issue Wide Bandgap Semiconductor Based Micro/Nano Devices)

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Abstract

An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band. View Full-Text

Keywords: AlGaN/GaN HEMT; DIBL effect; channel length modulation; power amplifier; W band

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MDPI and ACS Style

Li, J.; Mao, S.; Xu, Y.; Zhao, X.; Wang, W.; Guo, F.; Zhang, Q.; Wu, Y.; Zhang, B.; Chen, T.; Yan, B.; Xu, R.; Li, Y. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band. Micromachines 2018, 9, 396. https://doi.org/10.3390/mi9080396

AMA Style

Li J, Mao S, Xu Y, Zhao X, Wang W, Guo F, Zhang Q, Wu Y, Zhang B, Chen T, Yan B, Xu R, Li Y. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band. Micromachines. 2018; 9(8):396. https://doi.org/10.3390/mi9080396

Chicago/Turabian Style

Li, Junfeng, Shuman Mao, Yuehang Xu, Xiaodong Zhao, Weibo Wang, Fangjing Guo, Qingfeng Zhang, Yunqiu Wu, Bing Zhang, Tangsheng Chen, Bo Yan, Ruimin Xu, and Yanrong Li. 2018. "An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band" Micromachines 9, no. 8: 396. https://doi.org/10.3390/mi9080396

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An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

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