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Micromachines 2018, 9(7), 350; https://doi.org/10.3390/mi9070350

Graphene-Based Semiconductor Heterostructures for Photodetectors

Department of Applied Physics and Institute of Natural Sciences, Kyung Hee University, Yongin 17104, Korea
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Received: 29 May 2018 / Revised: 9 July 2018 / Accepted: 11 July 2018 / Published: 13 July 2018
(This article belongs to the Special Issue Atomic Scale Materials for Electronic and Photonic Devices)
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Abstract

Graphene transparent conductive electrodes are highly attractive for photodetector (PD) applications due to their excellent electrical and optical properties. The emergence of graphene/semiconductor hybrid heterostructures provides a platform useful for fabricating high-performance optoelectronic devices, thereby overcoming the inherent limitations of graphene. Here, we review the studies of PDs based on graphene/semiconductor hybrid heterostructures, including device physics/design, performance, and process technologies for the optimization of PDs. In the last section, existing technologies and future challenges for PD applications of graphene/semiconductor hybrid heterostructures are discussed. View Full-Text
Keywords: graphene; photodetector; transparent conductive electrode; hybrid heterostructure graphene; photodetector; transparent conductive electrode; hybrid heterostructure
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Shin, D.H.; Choi, S.-H. Graphene-Based Semiconductor Heterostructures for Photodetectors. Micromachines 2018, 9, 350.

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