In this article, we reported on a Ga2O3-based Schottky barrier diode and heterojunction diode from MOCVD. The Si-doped n-type Ga2O3 drift layer, grown by MOCVD, exhibited high crystal quality, flat surfaces, and uniform doping. The distribution of un...
The impact of 5G communication is expected to be widespread and transformative. It promises to provide faster mobile broadband speeds, lower latency, improved network reliability and capacity, and more efficient use of wireless technologies. The Scho...
GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper. The temperature distribution inside...
In this work, the physical and the electrical properties of vertical GaN Schottky diodes were investigated. Cathodo-luminescence (CL), micro-Raman spectroscopy, SIMS, and current-voltage (I-V) measurements were performed to better understand the effe...
A novel planar silicon carbide (SiC) MOSFET integrated with both MOS-channel diode (MCD) and junction barrier Schottky diode (JBS) on the same chip (MCD-JBSFET) is proposed and investigated through Technology Computer-Aided Design (TCAD) simulations...
Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characterist...
A novel Schottky diode frequency doubler in E-band, using biased series-connected diodes in the output waveguide, is reported. The doubler was implemented using a GaAs Schottky Monolithic Microwave Integrated Circuit (MMIC) process with integrated ca...
In this paper, a new method for the parameter extraction of Schottky barrier diode (SBD) is presented to eliminate the influence of parasitic parameters on the intrinsic capacitance-voltage (C-V) characteristics of the Schottky diodes at high frequen...
Vertical Schottky barrier diodes based on an ion beam sputter (IBS)-deposited β-Ga2O3 film on a single-crystalline (
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metalli...
In the current work, the exact analytical expression of the current–voltage characteristics, which are given in terms of the
Generally, glow-discharge detectors (GDD), acting on miniature neon indicator lamps, and Schottky diode detectors serve as efficient, fast, and room-temperature millimeter wave (MMW)/THz detectors. Previous studies on GDD implemented a repetition of...
In this paper the design and experimental validation of a fourth-harmonic mixer based on Schottky diodes working around 300 GHz is presented. The main novelty of this work consists in the integration of an MMIC-based local oscillator, working around...
Deep learning produces a remarkable performance in various applications such as image classification and speech recognition. However, state-of-the-art deep neural networks require a large number of weights and enormous computation power, which result...
The all-sputtered Al/SiO2/p-GaN metal-oxide-semiconductor (MOS) Schottky diode was fabricated by the cost-effective radio-frequency sputtering technique with a cermet target at 400 °C. Using scanning electron microscope (SEM), the thicknesses of...
We report the RF-to-DC characteristics of the integrated AlGaAs/GaAs Schottky diode and antenna under the direct injection and irradiation condition. The conversion efficiency up to 80% under direct injection of 1 GHz signal to the diode was achieved...
Herein, the fabrication of a novel highly sensitive and fast hydrogen (H2) gas sensor, based on the Ta2O5 Schottky diode, is described. First, Ta2O5 thin films are deposited on silicon carbide (SiC) and silicon (Si) substrates via a radio frequency (...
In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect t...
We present the characterization of a Zero-bias Schottky diode-based Terahertz (THz) detector up to 5.56 THz. The detector was operated with both a table-top system until 1.2 THz and at a Free-Electron Laser (FEL) facility at singular frequencies from...
In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-Ga2O3 by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerica...
Paralleling an external SiC Schottky barrier diode (SBD) with an SiC MOSFET redistributes the reverse-conduction current and may reduce the reverse-recovery energy. However, the benefit depends on device selection and operating conditions, and an uns...
This work presents an investigation of the temperature behavior of self-cascode composite transistors (SCCTs). Results supported by silicon measurements show that SCCTs can be used to generate a proportional to absolute temperature voltage or even a...
Traditional GaAs-based frequency multipliers still exhibit great challenges to meet the demand for solid-state high-power THz sources due to low breakdown voltage and heat dissipation of the Schottky barrier diode (SBD). In this study, a GaN SBD chai...
A nonlinear state-space model for Schottky diode rectifiers is presented that incorporates junction dynamics, layout parasitic effects, and electromagnetic coupling effects. Unlike prior approaches, the model resolves conduction intervals under harmo...
In this study, the performance of Schottky barrier diodes (SBD) based on β-Ga2O3 with floating metal rings (FMR) was investigated using numerical simulations with Technology Computer-Aided Design (TCAD) software. The simulation parameters of &be...
Reliable terahertz radiometer receiver systems demand detectors that combine high sensitivity with structural robustness. This paper presents the design, fabrication, and characterization of a 380 GHz zero-bias detector based on an ACST Schottky diod...
This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the c...
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-...
We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent charact...
This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricat...
In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process fol...
This paper presents a compact hybrid G-band (170–260 GHz) heterodyne receiver module incorporating both Millimeter Microwave Integrated Circuits (MMICs) and a Schottky diode-based circuit. An on-chip sextupler and a Low Noise Amplifier (LNA), a...
This paper presents a single-substrate microstrip rectenna for dedicated radio frequency energy harvesting applications. The proposed configuration of the rectenna circuit is composed of a clipart moon-shaped cut in order to improve the antenna imped...
The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection of the etching mask, ICP power, radio...
In this study, a dedicated dynamic measurement system was used to investigate the transient capacitance and recovery process of AlGaN/GaN lateral Schottky barrier diodes (SBDs). With the consideration of acceptor traps in the C-doped buffer, the C-V...
The silicon carbide (SiC) Schottky diode (SBD) detector in a SiC hybrid photomultiplier tube (HPMT) generates signals by receiving photocathode electrons with an energy of 10 keV. So, the performance of the SiC SBD under electron irradiation with an...
Schottky barrier diodes (SBD) are crucial in the electronics sector. The electronic properties of SBD are characterized by three basic electrical parameters as the ideality factor (n), barrier height (ΦSB) and series resistance (RS). These parame...
This paper presents the design, structural optimization, and two-dimensional (2D) technology computer-aided design (TCAD) simulation of a gallium nitride (GaN) vertical Merged P-i-N/Schottky (MPS) diode incorporating a multi-drift-layer doping profil...
Graphene–silicon Schottky diodes are intriguing devices that straddle the border between classical models and two-dimensional ones. Many papers have been published in recent years studying their operation based on the classical model developed...
In this work, by employing field plate (FP) and N ion-implantation edge termination (NIET) structure, the electrical performance of the β-Ga2O3 Schottky barrier diode (SBD) was greatly improved. Ten samples of vertical SBDs were fabricated to in...
Device characteristics of GaN merged P-i-N Schottky (MPS) diodes were evaluated and studied via two-dimensional technology computer-aided design (TCAD) after calibrating model parameters and critical electrical fields with experimental proven results...
Palladium phthalocyanine (PdPc) and palladium phthalocyanine integrated with tin–zinc oxide (PdPc:SnZnO) were prepared using a simple chemical approach, and their structural and morphological properties were identified using X-ray diffraction,...
High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al2O3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is pr...
This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (σ = 0.02 Q·cm) silicon substrates. The developed technology offers a reduction of 37% in onset voltage, VON (fr...
This paper describes the design and demonstration of a 135–190 GHz self-biased broadband frequency doubler based on planar Schottky diodes. Unlike traditional bias schemes, the diodes are biased in resistive mode by a self-bias resistor; thus,...
A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the...
Schottky barrier diodes, developed by low-cost techniques and low temperature processes (LTP-SBD), have gained attention for different kinds of novel applications, including flexible electronic fabrication. This work analyzes the behavior of the I&nd...
This paper analyzes microstructural layout and electrical behavior of silicon nanowire-based Schottky diodes, for use as wide-domain temperature sensors. The employed nanostructured three-dimensional substrates provide larger contact areas and enable...
The accurate determination of the electrical properties of photovoltaic devices is of utmost importance to predict and optimize their overall optoelectronic performance. For example, the minority carrier lifetime and the carrier diffusion length have...
The reliability of GaN-based devices operating under high temperatures is crucial for their application in extreme environments. To identify the fundamental mechanisms behind high-temperature degradation, we investigated GaN-on-sapphire Schottky barr...
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