Jang, K.-W.; Hwang, I.-T.; Kim, H.-J.; Lee, S.-H.; Lim, J.-W.; Kim, H.-S.
Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study. Micromachines 2020, 11, 53.
https://doi.org/10.3390/mi11010053
AMA Style
Jang K-W, Hwang I-T, Kim H-J, Lee S-H, Lim J-W, Kim H-S.
Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study. Micromachines. 2020; 11(1):53.
https://doi.org/10.3390/mi11010053
Chicago/Turabian Style
Jang, Kyu-Won, In-Tae Hwang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, and Hyun-Seok Kim.
2020. "Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study" Micromachines 11, no. 1: 53.
https://doi.org/10.3390/mi11010053
APA Style
Jang, K.-W., Hwang, I.-T., Kim, H.-J., Lee, S.-H., Lim, J.-W., & Kim, H.-S.
(2020). Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study. Micromachines, 11(1), 53.
https://doi.org/10.3390/mi11010053