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Journal: Micromachines, 2019
Volume: 10
Number: 77

Article: High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling
Authors: by Garam Kim, Jaehong Lee, Jang Hyun Kim and Sangwan Kim
Link: https://www.mdpi.com/2072-666X/10/2/77

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