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Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology

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Department of Electrical and Electronic Engineering, Harran University, Şanlıurfa 63000, Turkey
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Department of Electrical and Electronic Engineering, Alanya Alaaddin Keykubat University, Kestel, Alanya, Antalya 07450, Turkey
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Author to whom correspondence should be addressed.
Micromachines 2019, 10(11), 733; https://doi.org/10.3390/mi10110733
Received: 25 September 2019 / Revised: 21 October 2019 / Accepted: 25 October 2019 / Published: 29 October 2019
(This article belongs to the Special Issue Semiconductor Infrared Devices and Applications)
Room-temperature highly sensitive microbolometers are becoming very attractive in infrared (IR) sensing with the increase in demand for the internet of things (IOT), night vision, and medical imaging. Different techniques, such as building extremely small-scale devices (nanotubes, etc.) or using 2D materials, showed promising results in terms of high sensitivity with the cost of challenges in fabrication and low-noise readout circuit. Here, we propose a new and simple technique on the application of joule heating on a clamped–clamped beam without adding any complexity. It provides much better uniformity in temperature distribution in comparison to conventional joule heating, and this results in higher thermal stresses on fixed ends. This consequently brings around 60.5× improvement in the overall temperature sensitivity according to both theory and COMSOL (multiphysics solver). The sensitivity increased with the increase in the stiffness constant, and it was calculated as 134 N/m for a device with a 60.5× improvement. A considerable amount of decrease in the operation temperature (36× below 383 K and 47× below 428 K) was achieved via a new technique. That’s why the proposed solution can be used either to build highly reliable long-term devices or to increase the thermal sensitivity. View Full-Text
Keywords: microbolometer; infrared sensor; complementary metal-oxide semiconductor (CMOS); high sensitivity; temperature sensor; microresonator; MEMS; clamped–clamped beam; thermal detector microbolometer; infrared sensor; complementary metal-oxide semiconductor (CMOS); high sensitivity; temperature sensor; microresonator; MEMS; clamped–clamped beam; thermal detector
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Göktaş, H.; Gökhan, F.S. Analysis and Simulation of Forcing the Limits of Thermal Sensing for Microbolometers in CMOS–MEMS Technology. Micromachines 2019, 10, 733.

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