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Fabrication of Multiferroic Co-Substituted BiFeO3 Epitaxial Films on SrTiO3 (100) Substrates by Radio Frequency Magnetron Sputtering

Department of Applied Physics, Graduate School of Engineering, Tohoku University, 6-6-05, Aza-aoba, Aoba-ku, Sendai 980-8579, Japan
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Materials 2011, 4(6), 1087-1095; https://doi.org/10.3390/ma4061087
Received: 6 May 2011 / Revised: 24 May 2011 / Accepted: 3 June 2011 / Published: 9 June 2011
(This article belongs to the Special Issue Multiferroics)
The 10 at.% Co-substituted BiFeO3 films (of thickness 50 nm) were successfully prepared by radio frequency (r.f.) magnetron sputtering on SrTiO3 (100) substrates with epitaxial relationships of [001](001)Co-BiFeO3//[001](001)SrTiO3. In this study, a single phase Co-substituted BiFeO3 epitaxial film was fabricated by r.f. magnetron sputtering. Sputtering conditions such as Ar, O2 gas pressure, annealing temperature, annealing atmosphere, and sputtering power were systematically changed. It was observed that a low Ar gas pressure and low sputtering power is necessary to suppress the formation of the secondary phases of BiOx. The Co-substituted BiFeO3 films were crystalized with post-annealing at 600 °C in air. The process window for single phase films is narrower than that for pure BiFeO3 epitaxial films. By substituting Fe with Co in BiFeO3, the magnetization at room temperature increased to 20 emu/cm3. This result suggests that Co-substituted BiFeO3 films can be used in spin-filter devices. View Full-Text
Keywords: multiferroic; BiFeO3; BiCoO3; r.f. magnetron sputtering multiferroic; BiFeO3; BiCoO3; r.f. magnetron sputtering
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MDPI and ACS Style

Begum, H.A.; Naganuma, H.; Oogane, M.; Ando, Y. Fabrication of Multiferroic Co-Substituted BiFeO3 Epitaxial Films on SrTiO3 (100) Substrates by Radio Frequency Magnetron Sputtering. Materials 2011, 4, 1087-1095.

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