Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Zhang, Chunzi; Gunes, Ozan; Li, Yuanshi; Cui, Xiaoyu; Mohammadtaheri, Masoud; Wen, Shi-Jie; Wong, Rick; Yang, Qiaoqin; Kasap, Safa

doi:10.3390/ma13225132

Open AccessErratum

Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO₂ Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

¹

Department of Electrical and Computer Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9, Canada

²

Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9, Canada

³

Canadian Light Source Inc., 44 Innovation Boulevard, Saskatoon, SK S7N 2V3, Canada

⁴

Cisco Systems Inc., San Jose, CA 95134, USA

^*

Author to whom correspondence should be addressed.

Materials 2020, 13(22), 5132; https://doi.org/10.3390/ma13225132

Submission received: 15 September 2020 / Accepted: 29 September 2020 / Published: 13 November 2020

(This article belongs to the Section Thin Films and Interfaces)

Download Versions Notes

The authors would like to correct a typographical error in their paper [1]. The abstract and page 11 states 0.60 eV ± 0.5 eV for the bandgap. This should be 0.60 eV ± 0.05 eV, as apparent in the analysis and discussions in Section 4.

Reference

Zhang, C.; Gunes, O.; Li, Y.; Cui, X.; Mohammadtaheri, M.; Wen, S.-J.; Wong, R.; Yang, Q.; Kasap, S. The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO₂ Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160. [Google Scholar] [CrossRef] [PubMed] [Green Version]

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Zhang, C.; Gunes, O.; Li, Y.; Cui, X.; Mohammadtaheri, M.; Wen, S.-J.; Wong, R.; Yang, Q.; Kasap, S. Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO₂ Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160. Materials 2020, 13, 5132. https://doi.org/10.3390/ma13225132

AMA Style

Zhang C, Gunes O, Li Y, Cui X, Mohammadtaheri M, Wen S-J, Wong R, Yang Q, Kasap S. Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO₂ Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160. Materials. 2020; 13(22):5132. https://doi.org/10.3390/ma13225132

Chicago/Turabian Style

Zhang, Chunzi, Ozan Gunes, Yuanshi Li, Xiaoyu Cui, Masoud Mohammadtaheri, Shi-Jie Wen, Rick Wong, Qiaoqin Yang, and Safa Kasap. 2020. "Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO₂ Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160" Materials 13, no. 22: 5132. https://doi.org/10.3390/ma13225132

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Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO₂ Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

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