Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO2 Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

Chunzi Zhang; Ozan Gunes; Yuanshi Li; Xiaoyu Cui; Masoud Mohammadtaheri; Shi-Jie Wen; Rick Wong; Qiaoqin Yang; Safa Kasap

doi:10.3390/ma13225132

Erratum to Materials 2019, 12(13), 2160.

Erratum

13 November 2020

Erratum: Zhang, C. et al., The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO₂ Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160

and

Department of Electrical and Computer Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9, Canada

Department of Mechanical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, SK S7N 5A9, Canada

Canadian Light Source Inc., 44 Innovation Boulevard, Saskatoon, SK S7N 2V3, Canada

⁴

Cisco Systems Inc., San Jose, CA 95134, USA

Materials2020, 13(22), 5132;https://doi.org/10.3390/ma13225132

This article belongs to the Section Thin Films and Interfaces

Version Notes

Order Reprints

The authors would like to correct a typographical error in their paper [1]. The abstract and page 11 states 0.60 eV ± 0.5 eV for the bandgap. This should be 0.60 eV ± 0.05 eV, as apparent in the analysis and discussions in Section 4.

Reference

Zhang, C.; Gunes, O.; Li, Y.; Cui, X.; Mohammadtaheri, M.; Wen, S.-J.; Wong, R.; Yang, Q.; Kasap, S. The Effect of Substrate Biasing during DC Magnetron Sputtering on the Quality of VO₂ Thin Films and Their Insulator–Metal Transition Behavior. Materials 2019, 12, 2160. [Google Scholar] [CrossRef] [PubMed]

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