Next Article in Journal
Design of a Scaffold Parameter Selection System with Additive Manufacturing for a Biomedical Cell Culture
Next Article in Special Issue
Numerical Analysis and 1D/2D Sensitivity Study for Monolithic and Laminated Structural Glass Elements under Thermal Exposure
Previous Article in Journal
A Class of Rate-Independent Lower-Order Gradient Plasticity Theories: Implementation and Application to Disc Torsion Problem
Previous Article in Special Issue
Reliability of Orthodontic Miniscrews: Bending and Maximum Load of Different Ti-6Al-4V Titanium and Stainless Steel Temporary Anchorage Devices (TADs)
Open AccessArticle

Investigations on the Electrochemical Atomic Layer Growth of Bi2Se3 and the Surface Limited Deposition of Bismuth at the Silver Electrode

1
Dipartimento di Chimica, Università degli Studi di Firenze, via della Lastruccia 3, 50019 Sesto Fiorentino, Italy
2
Consorzio Interuniversitario Nazionale per la Scienza e Tecnologia dei Materiali, via Giusti 9, 50121 Florence, Italy
3
Dipartimento di Scienze della Terra, Università degli Studi di Firenze, via La Pira 4, 50121 Firenze, Italy
4
Dipartimento di Ingegneria Industriale, Università degli Studi di Firenze, via S. Marta 3, 50139 Florence, Italy
5
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22904, USA
6
Istituto dei Sistemi Complessi, Consiglio Nazionale delle Ricerche, via Madonna del Piano 10, 50019 Sesto Fiorentino, Italy
7
Istituto di Geoscienze e Georisirse, Consiglio Nazionale delle Ricerche, via La Pira 4, 50121 Florence, Italy
*
Authors to whom correspondence should be addressed.
Materials 2018, 11(8), 1426; https://doi.org/10.3390/ma11081426
Received: 28 June 2018 / Revised: 30 July 2018 / Accepted: 8 August 2018 / Published: 14 August 2018
(This article belongs to the Special Issue Selected Papers from the 3rd International E-Conference on Materials)
The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin films of bismuth (Bi) compounds. Exploiting the E-ALD, it was possible to obtain highly controlled nanostructured depositions as needed, for the application of these materials for novel electronics (topological insulators), thermoelectrics and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi2Se3 compound on the Ag (111) electrode. Verifying the composition with X-ray Photoelectron Spectroscopy (XPS) showed that, after the first monolayer, the deposition of Se stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. We then investigated the optimal conditions to deposit a single monolayer of metallic Bi directly on the Ag. View Full-Text
Keywords: bismuth; bismuth selenide; topological insulator; E-ALD; UPD bismuth; bismuth selenide; topological insulator; E-ALD; UPD
Show Figures

Figure 1

MDPI and ACS Style

Giurlani, W.; Giaccherini, A.; Calisi, N.; Zangari, G.; Salvietti, E.; Passaponti, M.; Caporali, S.; Innocenti, M. Investigations on the Electrochemical Atomic Layer Growth of Bi2Se3 and the Surface Limited Deposition of Bismuth at the Silver Electrode. Materials 2018, 11, 1426.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop