Search Results (29)

Two-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteristics spanning from visible to near-infrared regions, offering application potential in high-speed imaging, optical communication, and biosensing. This study investigates the doping characteristics of InSe using first-principles calculations, focusing on the doping and adsorption behaviors of Argentum (Ag) and Bismuth (Bi) atoms in InSe and their effects on its electronic structure. The research reveals that Ag atoms preferentially adsorb at interlayer vacancies with a binding energy of −2.19 eV, forming polar covalent bonds. This reduces the band gap from the intrinsic 1.51 eV to 0.29–1.16 eV and induces an indirect-to-direct band gap transition. Bi atoms doped at the center of three Se atoms exhibit a binding energy of −2.06 eV, narrowing the band gap to 0.19 eV through strong ionic bonding, while inducing metallic transition at inter-In sites. The introduced intermediate energy levels significantly reduce electron transition barriers (by up to 60%) and enhance carrier separation efficiency. This study links doping sites, electronic structures, and photoelectric properties through computational simulations, offering a theoretical framework for designing high-performance InSe-based photodetectors. It opens new avenues for narrow-bandgap near-infrared detection and carrier transport optimization. Full article

At present, lead halide PVSKSCs are promising photovoltaic cells but have some limitations, including their low stability in ambient conditions and the toxicity of lead. Thus, it will be of great significance to explore lead-free perovskite materials as an alternative absorber layer. In recent years, the numerical simulation of perovskite solar cells (PVSKSCs) via the solar cell capacitance simulation (SCAPS) method has attracted the attention of the scientific community. In this work, we adopted SCAPS for the theoretical study of lead (Pb)-free PVSKSCs. A cesium bismuth iodide (CsBi₃I₁₀; CBI) perovskite-like material was used as an absorber layer. The thickness of the CBI layer was optimized. In addition, different electron transport layers (ETLs), such as titanium dioxide (TiO₂), tin oxide (SnO₂), zinc oxide (ZnO), and zinc selenide (ZnSe), and different hole transport layers, such as spiro-OMeTAD (2,2,7,7-tetrakis(N,N-di(4-methoxyphenylamine)-9,9′-spirobifluorene), poly(3-hexylthiophene-2,5-diyl) (P₃HT), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA), and copper oxide (Cu₂O), were explored for the simulation of CBI-based PVSKSCs. A device structure of FTO/ETL/CBI/HTL/Au was adopted for simulation studies. The simulation studies showed the improved photovoltaic performance of CBI-based PVSKSCs using spiro-OMeTAD and TiO₂ as the HTL and ETL, respectively. An acceptable PCE of 11.98% with a photocurrent density (J_sc) of 17.360258 mA/cm², a fill factor (FF) of 67.10%, and an open-circuit voltage (V_oc) of 1.0282 V were achieved under the optimized conditions. It is expected that the present study will be beneficial for researchers working towards the development of CBI-based PVSKSCs. Full article

As an emerging two-dimensional (2D) Group-VA material, bismuth selenide (Bi₂Se₃) exhibits favorable electrical and optical properties. Here, three distinct morphologies of Bi₂Se₃ were obtained from bulk Bi₂Se₃ through electrochemical intercalation exfoliation. And the morphologies of these nanostructures can be tuned by adjusting solvent polarity during exfoliation. Then, the nonlinear optical and absorption characteristics of the Bi₂Se₃ samples with different morphologies were investigated using open-aperture Z-scan technology. The results reveal that the particle structure of Bi₂Se₃ exhibits stronger reverse saturable absorption (RSA) than the sheet-like structure. This is attributed to the higher degree of oxidation and greater number of localized defect states in the particle structure than in the sheet-like structure. Electrons in these defect states can be excited to higher energy levels, thereby triggering excited-state and two-photon absorption, which strengthen RSA. Finally, with increasing the RSA, the optical limiting threshold of 2D Bi₂Se₃ can also be increased. This work expands the potential applications of 2D Bi₂Se₃ materials in the field of broadband nonlinear photonics. Full article

Heterocyclic aryl selenides have recently attracted considerable research interest owing to their applications in biological and pharmaceutical fields. Herein, we describe a simple and general synthesis of 3-selanylindoles via a novel regioselective C–H selenation of indoles using a bismuth reagent as a catalyst. The reactions of indoles with diselenides in the presence of 10 mol% BiI₃ at 100 °C in DMF afforded the corresponding 3-selanylindoles in moderate-to-excellent yields. The reaction proceeded efficiently under aerobic conditions by adding only a catalytic amount of BiI₃, which was non-hygroscopic and less toxic, and both selanyl groups of the diselenide were transferred to the desired products. Full article

A single transistor preamplifier circuit was designed to facilitate electrical detection of mechanical oscillations in nanoelectromechanical systems (NEMSs) at low temperatures. The amplifier was integrated in the close vicinity of the nanowire inside the cryostat to minimize cabling load and interference. The function of the circuit was impedance conversion for current flow measurements in NEMSs with a high internal resistance. The circuit was tested to operate at temperatures as low as 5 K and demonstrated the ability to detect oscillations in double-clamped bismuth selenide nanowires upon excitation by a 0.1 MHz–10 MHz AC signal applied to a mechanically separated gate electrode. A strong resonance frequency dependency on temperature was observed. A relatively weak shift in the oscillation amplitude and resonance frequency was measured when a DC bias voltage was applied to the gate electrode at a constant temperature. Full article

Bi₂Se₃, one of the most extensively studied topological insulators, has received significant attention, and abundant research has been dedicated to exploring its surface electronic properties. However, little attention has been given to its piezoelectric properties. Herein, we investigate the piezoelectric response in a five-layer Bi₂Se₃ nanosheet using scanning probe microscopy (SPM) techniques. The piezoelectricity of Bi₂Se₃ is characterized using both conventional piezoresponse force microscopy (PFM) and a sequential excitation scanning probe microscopy (SE-SPM) technique. To confirm the linear piezoelectricity of Bi₂Se₃ two-dimensional materials, measurements of point-wise linear and quadratic electromechanical responses are carried out. Furthermore, the presence of polarization and relaxation is confirmed through hysteresis loops. As expected, the Bi₂Se₃ nanosheet exhibits an electromechanical solid response. Due to the inevitable loss of translational symmetry at the crystal edge, the lattice of the odd-layer Bi₂Se₃ nanosheet is noncentrosymmetric, indicating its potential for linear piezoelectricity. This research holds promise for nanoelectromechanical systems (NEMS) applications and future nanogenerators. Full article

In this work, a simple catalyst-free physical vapor deposition method is optimized by adjusting source material pressure and evaporation time for the reliable obtaining of freestanding nanoribbons with thicknesses below 15 nm. The optimum synthesis temperature, time and pressure were determined for an increased yield of ultrathin Bi₂Se₃ nanoribbons with thicknesses of 8–15 nm. Physical and electrical characterization of the synthesized Bi₂Se₃ nanoribbons with thicknesses below 15 nm revealed no degradation of properties of the nanoribbons, as well as the absence of the contribution of trivial bulk charge carriers to the total conductance of the nanoribbons. Full article

The topological insulator 2D Bi₂Se₃ is promising for electronic devices due to its unique electronic properties; however, it is challenging to prepare antioxidative nanosheets since Bi₂Se₃ is prone to oxidation. Surface passivation using ligand agents after Bi₂Se₃ exfoliation works well to protect the surface, but the process is time-consuming and technically challenging; a passivation agent that is stable under a highly biased potential is significant for in situ passivation of the Bi₂Se₃ surface. In this work, the roles of halide anions (Cl⁻, Br⁻, and I⁻) in respect of the chemical properties of synthetic Bi₂Se₃ nanosheets during electrochemical intercalated exfoliation were investigated to determine the antioxidation capacity. It was found that Bi₂Se₃ nanosheets prepared in a solution of tetrabutylammonium chloride (TBA⁺ and Cl⁻) have the best oxidation resistance via the surface bonding of Bi with Cl, which promotes obtaining better device stability. This work paves an avenue for adjusting the components of the electrolyte to further promote the stability of 2D Bi₂Se₃-nanosheet-based electronic devices. Full article

In this work, we present the generation of two distinct types of soliton pulses using a Bismuth Selenide (Bi₂Se₃) saturable absorber (SA) synthesized in our laboratory. The soliton pulses were generated in two different laser cavity configurations, resulting in two types of solitons: a soliton pulse with Kelly sidebands and a bunched soliton pulse with peak-dip sidebands. Both solitons operated at the fundamental repetition rate—23.3 MHz (for the soliton with Kelly sidebands) and 13 MHz (for the bunched soliton with peak-dip sidebands). We observed that the accumulation of nonlinear phase shift from the added single mode fiber (SMF) split the single soliton pulse into 44 pulses in a bunched oscillation envelope. At the same time, peak-dip sidebands were imposed on the bunched soliton spectrum due to constructive and destructive interferences between soliton pulse and dispersive waves. The measured pulse width for both solitons were 0.63 ps (for the soliton with Kelly sidebands) and 1.52 ps (for the bunched soliton with peak-dip sidebands), respectively. Our results demonstrate the potential of Bi₂Se₃ SAs in generating different types of soliton pulses, which could have potential applications in various areas of optical communication and spectroscopy. Full article

Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface channels is often hampered by the presence of crystal defects, such as antisites, vacancies, and twin domains. For terahertz device applications, twinning is shown to be highly deleterious. Previous attempts to reduce twins using technologically important InP(111) substrates have been promising, but have failed to completely suppress twin domains while preserving high structural quality. Here we report growth of twin-free molecular beam epitaxial Bi₂Se₃ and Sb₂Te₃ structures on ultra-thin In₂Se₃ layers formed by a novel selenium passivation technique during the oxide desorption of smooth, non-vicinal InP(111)B substrates, without the use of an indium source. The formation of un-twinned In₂Se₃ provides a favorable template to fully suppress twin domains in 3D-TIs, greatly broadening novel device applications in the terahertz regime. Full article

Localized surface plasmon resonance (LSPR) is the cause of the photo-thermal effect observed in topological insulator (TI) bismuth selenide (Bi₂Se₃) nanoparticles. These plasmonic properties, which are thought to be caused by its particular topological surface state (TSS), make the material interesting for application in the field of medical diagnosis and therapy. However, to be applied, the nanoparticles have to be coated with a protective surface layer, which prevents agglomeration and dissolution in the physiological medium. In this work, we investigated the possibility of using silica as a biocompatible coating for Bi₂Se₃ nanoparticles, instead of the commonly used ethylene-glycol, which, as is presented in this work, is not biocompatible and alters/masks the optical properties of TI. We successfully prepared Bi₂Se₃ nanoparticles coated with different silica layer thicknesses. Such nanoparticles, except those with a thick, ≈200 nm silica layer, retained their optical properties. Compared to ethylene-glycol coated nanoparticles, these silica coated nanoparticles displayed an improved photo-thermal conversion, which increased with the increasing thickness of the silica layer. To reach the desired temperatures, a 10–100 times lower concentration of photo-thermal nanoparticles was needed. In vitro experiments on erythrocytes and HeLa cells showed that, unlike ethylene glycol coated nanoparticles, silica coated nanoparticles are biocompatible. Full article

Bismuth tellurides is one of the most promising thermoelectric (TE) material candidates in low-temperature application circumstances, but the n-type thermoelectric property is relatively low compared to the p-type counterpart and still needs to be improved. Herein, we incorporated different copper selenides (CuSe, Cu₃Se₂ and Cu_2−xSe) into a Bi₂Te₃ matrix to create the alloy by grinding and successive sintering to enable higher thermoelectric performance. The results demonstrated that all alloys achieved n-type TE characteristics and Bi₂Te₃-CuSe exhibited the best Seebeck coefficient and power factor among them. Along with the low thermal conductivity, the maximum dimensionless TE figure of merit (ZT) value of 1.64 at 573 K was delivered for Bi₂Te₃-CuSe alloy, which is among the best reported results in the n-type Bi₂Te₃-based TE materials to the best of our knowledge. The improved TE properties should be related to the co-doping process of Se and Cu. Our investigation shows a new method to enhance the performance of n-type TE materials by appropriate co-doping or alloying. Full article

This study provided a theoretical insight for designing novel plasmonic biosensors using bismuth selenide (Bi₂Se₃)-Graphene heterostructures. It was a van der Waals (vdWs) stacked configuration composed of gold (Au) film, few quintuple layer (QL) Bi₂Se₃ and few-layered graphene. In particular, the proposed biosensor was created by Goos-Hänchen (GH) shift rather than phase, resulting in a more sensitive biosensing response. Under the excitation of 632.8 nm, significant sensitivity enhancement performance was obtained via varying the thickness of Bi₂Se₃-Graphene heterostructures. The best configuration was 32 nm Au film−2-QL Bi₂Se₃-3-layer graphene, generating the largest GH shift, as high as −1.0202 × 10⁴ µm. Moreover, the highest detection sensitivity was determined to be 8.5017 × 10⁶ µm/RIU, responding to a tiny refractive index (RI) change of 0.0012 RIU (RIU, refractive index unit). More importantly, our proposed biosensor has shown a theoretical feasibility of monitoring virus samples. For example, there was an efficient linear detection range for severe acute respiratory syndrome coronavirus 2 (SARS-CoV−2, 0~13.44 nanomole (nM)) and its Spike (S) glycoprotein (0~59.74 nM), respectively. It is expected that our proposed plasmonic biosensor has a potential application in performing sensitive detection of SARS-CoV−2. Full article

We discuss experimental and theoretical studies of the generation of the third terahertz (THz) frequency harmonic in thin films of Bi₂Se₃ and Bi_2-xSb_xTe_3-ySe_y (BSTS) topological insulators (TIs) and the generation of THz radiation in photoconductive antennas based on the TI films. The experimental results, supported by the developed kinetic theory of third harmonic generation, show that the frequency conversion in TIs is highly efficient because of the linear energy spectrum of the surface carriers and fast energy dissipation. In particular, the dependence of the third harmonic field on the pump field remains cubic up to the pump fields of 100 kV/cm. The generation of THz radiation in TI-based antennas is obtained and described for the pump, with the energy of photons corresponding to the electron transitions to higher conduction bands. Our findings open up possibilities for advancing TI-based films into THz photonics as efficient THz wave generators and frequency converters. Full article

As a promising topological insulator, two-dimensional (2D) bismuth selenide (Bi₂Se₃) attracts extensive research interest. Controllable surface doping of layered Bi₂Se₃ becomes a crucial issue for the relevant applications. Here, we propose an efficient method for the chemical thinning and surface doping of layered Bi₂Se₃, forming Se/Bi₂Se₃ heterostructures with tunable thickness ranging from a few nanometers to hundreds of nanometers. The thickness can be regulated by varying the reaction time and large-size few-layer Bi₂Se₃ sheets can be obtained. Different from previous liquid-exfoliation methods that require complex reaction process, in-situ and thickness-controllable exfoliation of large-size layered Bi₂Se₃ can be realized via the developed method. Additionally, the formation of Se nanomeshes coated on the Bi₂Se₃ sheets remarkably enhance the intensity of Raman vibration peaks, indicating that this method can be used for surface-enhanced Raman scattering. The proposed chemical thinning and surface-doping method is expected to be extended to other bulk-layered materials for high-efficient preparation of 2D heterostructures. Full article