Manyk, T.; Rutkowski, J.; Kłos, K.; Gajowski, N.; Krishna, S.; Martyniuk, P.
Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature. Sensors 2025, 25, 2255.
https://doi.org/10.3390/s25072255
AMA Style
Manyk T, Rutkowski J, Kłos K, Gajowski N, Krishna S, Martyniuk P.
Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature. Sensors. 2025; 25(7):2255.
https://doi.org/10.3390/s25072255
Chicago/Turabian Style
Manyk, Tetiana, Jarosław Rutkowski, Krzysztof Kłos, Nathan Gajowski, Sanjay Krishna, and Piotr Martyniuk.
2025. "Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature" Sensors 25, no. 7: 2255.
https://doi.org/10.3390/s25072255
APA Style
Manyk, T., Rutkowski, J., Kłos, K., Gajowski, N., Krishna, S., & Martyniuk, P.
(2025). Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature. Sensors, 25(7), 2255.
https://doi.org/10.3390/s25072255