Next Article in Journal
Diazonium Salt-Based Surface-Enhanced Raman Spectroscopy Nanosensor: Detection and Quantitation of Aromatic Hydrocarbons in Water Samples
Previous Article in Journal
Biomechanical Modeling of Pterygium Radiation Surgery: A Retrospective Case Study
Article Menu
Issue 6 (June) cover image

Export Article

Open AccessArticle
Sensors 2017, 17(6), 1199;

A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect

Graduate Institute of Electronic Engineering, Chang Gung University, 259 Wenhwa 1st Road, Kweishan, Taoyuan 333, Taiwan
Authors to whom correspondence should be addressed.
Academic Editor: Vittorio M. N. Passaro
Received: 24 March 2017 / Revised: 17 May 2017 / Accepted: 18 May 2017 / Published: 24 May 2017
(This article belongs to the Section Physical Sensors)
Full-Text   |   PDF [2304 KB, uploaded 24 May 2017]   |  


A novel concept of drain current modelling in rectangular normal MOS transistors with the Lorentz force has been proposed for the first time. The single-drain MOS transistor is qualified as a magnetic sensor. To create the Lorentz force, a DC loop current is applied through an on-chip metal loop around the device, and the relation between the applied loop current and the created magnetic field is assumed to be linear in nature. The drain current of the MOS transistor is reduced with the applied Lorentz force from both directions. This change in the drain current is ascribed to a change in mobility in the strong inversion region, and a change in mobility of around 4.45% is observed. To model this change, a set of novel drain current equations, under the Lorentz force, for the strong inversion region has been proposed. A satisfactory agreement of an average error of less than 2% between the measured and the calculated drain currents under the magnetic field created by an on-chip metal loop is achieved. View Full-Text
Keywords: Lorentz force; Hall effect; MagFET; MOSFET; magnetic sensor Lorentz force; Hall effect; MagFET; MOSFET; magnetic sensor

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Chow, H.-C.; Chatterjee, P.; Feng, W.-S. A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect. Sensors 2017, 17, 1199.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top