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Sensors 2017, 17(12), 2841;

Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors

ON Semiconductor, 1964 Lake Avenue, Rochester, NY 14615, USA
ON Semiconductor, 2660 Zanker Road, San Jose, CA 95134, USA
This paper is an expanded version of our published paper Stevens, E.G.; Clayhold, J.; Doan, H.; Fabinski, J. Hynecek, R.; Kosman, S.; Parks, C. Recent Enhancements to Electron Multiplying CCD Image Sensors. In Proceedings of the 2017 International Image Sensor Workshop, Hiroshima, Japan, 30 May–2 June 2017.
Author to whom correspondence should be addressed.
Received: 26 September 2017 / Revised: 28 November 2017 / Accepted: 30 November 2017 / Published: 7 December 2017
(This article belongs to the Special Issue Special Issue on the 2017 International Image Sensor Workshop (IISW))
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This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device. View Full-Text
Keywords: interline CCD; EMCCD; quantum efficiency; low noise; gain aging interline CCD; EMCCD; quantum efficiency; low noise; gain aging

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Stevens, E.G.; Clayhold, J.A.; Doan, H.; Fabinski, R.P.; Hynecek, J.; Kosman, S.L.; Parks, C. Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors. Sensors 2017, 17, 2841.

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