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Sensors 2017, 17(12), 2781; https://doi.org/10.3390/s17122781

Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects

State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China
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Received: 27 September 2017 / Revised: 20 November 2017 / Accepted: 24 November 2017 / Published: 30 November 2017
(This article belongs to the Special Issue Image Sensors)
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Abstract

Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark signal post irradiation showing a remarkable increase. A theoretical method of dark signal distribution pre- and post-radiation is used to analyze the degradation mechanisms of the dark signal distribution. The theoretical results are in good agreement with experimental results. This research would provide a good understanding of the proton radiation effects on the CIS and make it possible to predict the dark signal distribution of the CIS under the complex proton radiation environments. View Full-Text
Keywords: CMOS image sensors (CISs); proton; dark signal distribution; theoretical; experimental CMOS image sensors (CISs); proton; dark signal distribution; theoretical; experimental
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Xue, Y.; Wang, Z.; Chen, W.; Liu, M.; He, B.; Yao, Z.; Sheng, J.; Ma, W.; Dong, G.; Jin, J. Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects. Sensors 2017, 17, 2781.

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