Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects

Xue, Yuanyuan; Wang, Zujun; Chen, Wei; Liu, Minbo; He, Baoping; Yao, Zhibin; Sheng, Jiangkun; Ma, Wuying; Dong, Guantao; Jin, Junshan

doi:10.3390/s17122781

Open AccessArticle

Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects

by

Yuanyuan Xue

,

Zujun Wang

^*,

Wei Chen

^*,

Minbo Liu

,

Baoping He

,

Zhibin Yao

,

Jiangkun Sheng

,

Wuying Ma

,

Guantao Dong

and

Junshan Jin

State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an 710024, China

^*

Authors to whom correspondence should be addressed.

Sensors 2017, 17(12), 2781; https://doi.org/10.3390/s17122781

Submission received: 27 September 2017 / Revised: 20 November 2017 / Accepted: 24 November 2017 / Published: 30 November 2017

(This article belongs to the Special Issue Image Sensors)

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Abstract

Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark signal post irradiation showing a remarkable increase. A theoretical method of dark signal distribution pre- and post-radiation is used to analyze the degradation mechanisms of the dark signal distribution. The theoretical results are in good agreement with experimental results. This research would provide a good understanding of the proton radiation effects on the CIS and make it possible to predict the dark signal distribution of the CIS under the complex proton radiation environments.

Keywords: CMOS image sensors (CISs); proton; dark signal distribution; theoretical; experimental

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MDPI and ACS Style

Xue, Y.; Wang, Z.; Chen, W.; Liu, M.; He, B.; Yao, Z.; Sheng, J.; Ma, W.; Dong, G.; Jin, J. Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects. Sensors 2017, 17, 2781. https://doi.org/10.3390/s17122781

AMA Style

Xue Y, Wang Z, Chen W, Liu M, He B, Yao Z, Sheng J, Ma W, Dong G, Jin J. Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects. Sensors. 2017; 17(12):2781. https://doi.org/10.3390/s17122781

Chicago/Turabian Style

Xue, Yuanyuan, Zujun Wang, Wei Chen, Minbo Liu, Baoping He, Zhibin Yao, Jiangkun Sheng, Wuying Ma, Guantao Dong, and Junshan Jin. 2017. "Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects" Sensors 17, no. 12: 2781. https://doi.org/10.3390/s17122781

APA Style

Xue, Y., Wang, Z., Chen, W., Liu, M., He, B., Yao, Z., Sheng, J., Ma, W., Dong, G., & Jin, J. (2017). Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects. Sensors, 17(12), 2781. https://doi.org/10.3390/s17122781

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Proton Radiation Effects on Dark Signal Distribution of PPD CMOS Image Sensors: Both TID and DDD Effects

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