Stress Marks on the Genome: Use or Lose?
1
Department of Biochemistry and Molecular Biology, College of Medicine, Howard University, 520 W Street, NW, Washington, DC 20059, USA
2
Department of Biochemistry, Faculty of Applied Medical Science, Umm Al- Qura University, Makkah 21421, Saudi Arabia
3
National Human Genome Center, College of Medicine, Howard University, 2041 Georgia Avenue, NW, Washington, DC 20060, USA
*
Author to whom correspondence should be addressed.
Int. J. Mol. Sci. 2019, 20(2), 364; https://doi.org/10.3390/ijms20020364
Received: 4 December 2018 / Revised: 31 December 2018 / Accepted: 10 January 2019 / Published: 16 January 2019
(This article belongs to the Special Issue DNA Replication Stress)
Oxidative stress and the resulting damage to DNA are inevitable consequence of endogenous physiological processes further amplified by cellular responses to environmental exposures. If left unrepaired, oxidative DNA lesions can block essential processes such as transcription and replication or can induce mutations. Emerging data also indicate that oxidative base modifications such as 8-oxoG in gene promoters may serve as epigenetic marks, and/or provide a platform for coordination of the initial steps of DNA repair and the assembly of the transcriptional machinery to launch adequate gene expression alterations. Here, we briefly review the current understanding of oxidative lesions in genome stability maintenance and regulation of basal and inducible transcription.
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Keywords:
oxidative stress; DNA damage; DNA repair; replication; 8-oxoG; epigenetic; gene expression; helicase
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MDPI and ACS Style
Bokhari, B.; Sharma, S. Stress Marks on the Genome: Use or Lose? Int. J. Mol. Sci. 2019, 20, 364. https://doi.org/10.3390/ijms20020364
AMA Style
Bokhari B, Sharma S. Stress Marks on the Genome: Use or Lose? International Journal of Molecular Sciences. 2019; 20(2):364. https://doi.org/10.3390/ijms20020364
Chicago/Turabian StyleBokhari, Bayan; Sharma, Sudha. 2019. "Stress Marks on the Genome: Use or Lose?" Int. J. Mol. Sci. 20, no. 2: 364. https://doi.org/10.3390/ijms20020364
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