Insulated Gate Bipolar Transistor (IGBT) Modules, 2nd Edition
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".
Deadline for manuscript submissions: 31 July 2025 | Viewed by 89
Special Issue Editor
Interests: integrated circuit packaging; power devices; reliability analysis; micro and nano devices
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
With the rapid development of social progress and productivity, the insulated gate bipolar transistor (IGBT), as a new electronic power device, is a composite, fully controlled voltage-driven power device composed of a bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET). It is also widely used in many high-power applications, such as wind turbines, high-speed trains, electric vehicles, and ships; it is also a leader in the development of power semiconductor devices due to its fast-switching speed, low on-state voltage and good stability in smart grids and high-voltage DC transmission. The reliability of IGBT modules is also a trending topic of research in the packaging industry. Long periods of high-temperature operation can lead to increased failure and reduced reliability of power devices; the failure of devices in areas with very low fault tolerance can cause irreversible results. The study of the reliability of IGBT modules, on the one hand, extends the life of the modules and, on the other hand, consolidates the development of power device reliability technology and accelerates research and innovation on IGBT power devices.
Building on the success of this Special Issue’s first edition, the second edition will not only continue to address the damage mechanisms of IGBT modules but also highlight new strategies for optimizing device design and packaging, ensuring better performance under extreme operating conditions. We encourage further submissions on cutting-edge research and novel approaches to solve the challenges faced by IGBT modules, as well as improvements in the integration of IGBT technology with other power devices.
We invite research papers, communications, and review articles to contribute to this Special Issue that offer deeper insights into IGBT module reliability, focusing on failure modes, damage prevention, and innovations in packaging and thermal management. Manuscripts that explore related power device technologies are also welcome.
Thank you in advance.
Dr. Peisheng Liu
Guest Editor
Manuscript Submission Information
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Keywords
- IGBT module
- integrated circuit rackaging
- power devices
- reliability analysis
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Related Special Issue
- Insulated Gate Bipolar Transistor (IGBT) Modules in Micromachines (12 articles)
