Search Results (180)

Transparent conductive oxides (TCOs) have become essential components in a broad range of modern devices, including smartphones, flat-panel displays, and photovoltaic cells. Currently, indium tin oxide (ITO) is used in approximately 90% of these devices. However, ITO prices continue to rise due to the limited supply of indium (In), making the development of alternative materials for TCOs indispensable. Therefore, this study highlights the latest advances in creating new, affordable materials, with a focus on aluminum-doped zinc oxide (AZO). Over the last few decades, this material has been widely studied to improve its physical properties, particularly its low electrical resistivity, which can affect the performance of various devices. Now, it is close to replacing ITO due to several advantages including cost-effectiveness, stability under hydrogen plasma, low processing temperatures, and lack of toxicity. Besides that, in comparison to other TCOs such as IZO, IGZO, or IZrO, AZO achieved a low electrical resistivity (10⁻⁵ ohm cm) while maintaining a high transparency across the visible spectrum (over 85%). Additionally, due to the increasing development of technologies utilizing such materials, it is essential to develop more effective techniques for producing TCOs on a larger scale. Additionally, due to the increasing development of technologies utilizing such materials, it is essential to develop more effective techniques for producing TCOs on a larger scale. This review emphasizes the potential of AZO as a cost-effective and scalable alternative to ITO, highlighting key advancements in deposition techniques such as pulsed laser deposition (PLD). Full article

Indium-based oxide semiconductors have been commercialized because of their excellent electrical properties, but the high cost, limited availability, and environmental toxicity of indium necessitate the development of alternative materials. Among the most promising candidates, zinc–tin oxide (ZTO) is an indium-free oxide semiconductor with considerable potential, but its relatively low carrier mobility and inherent limitations in thin-film quality demand further performance enhancements. This paper proposes a new approach to overcome these challenges by incorporating single-walled carbon nanotubes (SWNTs) as conductive fillers into the ZTO matrix and using a layer-by-layer multiple coating process to construct nanocomposite thin films. As a result, ZTO/SWNTs (0.07 wt.%) thin-film transistors (TFTs) fabricated with three coating cycles exhibited a high saturation mobility of 18.72 cm²/V·s, a threshold voltage of 0.84 V, and a subthreshold swing of 0.51 V/dec. These values represent an approximately four-fold improvement in mobility compared to ZTO TFT, showing that the multiple-coating-based nanocomposite strategy can effectively overcome the fundamental limitations. This study confirms the feasibility of achieving high-performance oxide semiconductor transistors without indium, providing a sustainable pathway for next-generation flexible electronics and display technologies. Full article

In this study, zinc–tin oxide (ZTO) thin films were prepared via radio-frequency magnetron sputtering to examine the influence of annealing temperature on the performance of thin-film transistors (TFTs) and their resistive-load inverters. The findings reveal that annealing modulates the concentration and spatial distribution of oxygen vacancies (V_O), which directly affect carrier density and interface trap density, ultimately determining the electrical behavior of inverters. At the optimal annealing temperature of 600 °C, the V_O concentration was effectively moderated, resulting in a TFT with a mobility of 12.39 cm² V⁻¹ s⁻¹, a threshold voltage of 6.13 V, an on/off current ratio of 1.09 × 10⁸, and a voltage gain of 11.77 in the corresponding inverter. However, when the V_O concentration deviated from this optimal range, whether in excess or deficiency, the gain was reduced and power consumption increased. This V_O engineering strategy enables the simultaneous optimization of both TFT and inverter performance without relying on rare elements, offering a promising pathway toward the development of low-cost, large-area, flexible, and transparent electronic devices. Full article

This study investigates the development and sensing profile of synthetic melanin nanoparticle-coated electrodes for the electrochemical detection of heavy metals, including lead (Pb), cadmium (Cd), cobalt (Co), zinc (Zn), nickel (Ni), and iron (Fe). Synthetic melanin films were prepared in situ by the deacetylation of diacetoxy indole (DAI) to dihydroxy indole (DHI), followed by the deposition of DHI monomers onto indium tin oxide (ITO) and glassy carbon electrodes (GCE) using cyclic voltammetry (CV), forming a thin layer of synthetic melanin film. The deposition process was characterized by electrochemical quartz crystal microbalance (EQCM) in combination with linear sweep voltammetry (LSV) and amperometry to determine the mass and thickness of the deposited film. Surface morphology and elemental composition were examined using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). In contrast, Fourier-transform infrared (FTIR) and UV–Vis spectroscopy confirmed the melanin’s chemical structure and its polyphenolic functional groups. Differential pulse voltammetry (DPV) and amperometry were employed to evaluate the melanin films’ electrochemical activity and sensitivity for detecting heavy metal ions. Reproducibility and repeatability were rigorously assessed, showing consistent electrochemical performance across multiple electrodes and trials. A comparative analysis of ITO, GCE, and graphite electrodes was conducted to identify the most suitable substrate for melanin film preparation, focusing on stability, electrochemical response, and metal ion sensing efficiency. Finally, the applicability of melanin-coated electrodes was tested on in-house heavy metal water samples, exploring their potential for practical environmental monitoring of toxic heavy metals. The findings highlight synthetic melanin-coated electrodes as a promising platform for sensitive and reliable detection of iron with a sensitivity of 106 nA/ppm and a limit of quantification as low as 1 ppm. Full article

Chemical nanosensors based on tin dioxide (SnO₂) and zinc oxide (ZnO) nanoparticles (NPs) were developed and characterized for the detection of low concentrations of atmospheric pollutants, such as nitrogen dioxide (NO₂) and carbon monoxide (CO). The sensing layers were prepared using three fabrication methods: drop-casting, electrospray, and spark ablation coupled with an inertial impaction printer, to compare their performance. Multiple surface characterization techniques were carried out to investigate the surface morphology and elemental composition of the deposited layers such as SEM (scanning electron microscopy) and XPS (X-ray photoelectron spectroscopy) analyses. UV light photoactivation enabled the sensors to detect ultra-low concentrations of the target gases at room temperature (100 ppb NO₂ and 1 ppm CO). The measurements were conducted at 50% relative humidity to simulate real environmental conditions. All sensors were capable of detecting the target gases. Drop-casting is the simplest and most cost-effective technique, but it is also the least reproducible. In contrast, sensors based on the spark ablation technique achieved more homogeneous sensing layers, with practically no nanoparticle agglomeration, resulting in devices with lower noise and drift in their electrical response. Full article

In this study, we investigate the impact of rising time on alternating current (AC) stress-induced degradation in amorphous indium–tin–gallium–zinc oxide (a-ITGZO) TFTs through both experiments and simulations. When AC bias stresses with rising and falling times (t_r-f) of 400 ns, 200 ns, and 100 ns were applied to the a-ITGZO TFTs, the threshold voltage (V_TH) shifted positively by 0.97 V, 2.68 V, and 2.83 V, respectively. These experimental results align with a stretched exponential model, which attributes the V_TH to electron trapping in bulk dielectric states or at interface traps. The simulation results further validate the stretched exponential model by illustrating the potential distribution across the dielectric and channel layers as a function of t_r-f and the density of states in the a-ITGZO TFT. Full article

Both tungsten trioxide (WO₃) nanosheet arrays and tungsten trioxide/zinc oxide (WO₃/ZnO) nanocomposites were grown on fluorine-doped tin oxide (FTO) coated glass slides using a hydrothermal method to develop a visible-light-driven photocatalyst with easy reusability. Field emission scanning electron microscopy (FE-SEM) observations confirmed the formation of irregular oxide nanosheet arrays on the FTO surfaces. X-ray diffraction (XRD) analysis revealed the presence of hexagonal WO₃ and wurtzite ZnO crystal phases. UV-Vis diffuse reflectance spectroscopy showed that integrating ZnO nanostructures with WO₃ nanosheets resulted in a blue shift of the absorption edge and a reduced absorption capacity in the visible-light region. Photoluminescence (PL) spectra indicated that the WO 0.5/ZnO 2.0 sample exhibited the lowest electron-hole recombination rate among the WO₃/ZnO nanocomposite sample. Photocatalytic degradation tests demonstrated that all WO₃/ZnO nanocomposite samples had higher photodegradation rates for a 10 ppm methylene blue (MB) aqueous solution under visible-light irradiation compared to pristine WO₃ nanosheet arrays. Among them, the WO 0.5/ZnO 2.0 sample showed the highest photocatalytic efficiency. Furthermore, it exhibited excellent recyclability and high photodegradation stability over three cycles. Full article

As the typical representative of amorphous oxide semiconductors (AOS), quaternary indium gallium zinc oxide (IGZO) has been applied as the active layer of thin-film transistors (TFTs), but their mobility is still low (usually ~10 cm²/Vs). IGTO is reported to have larger mobility owing to the addition of Tin (Sn) in IZO. So, whether Sn doping can increase the optoelectronic properties of IGZO is a new topic worth studying. In this study, four series of quinary InGaZnSnO (IGZTO) oxide thin films were deposited on glass substrates using a high-purity IGZTO (In:Ga:Zn:Sn:O = 1:0.5:1.5:0.25:x, atomic ratio) ceramic target by RF magnetron sputtering. The effects of fabrication parameters (sputtering power, argon gas flow, and target-to-substrate distance) and film thickness on the microstructure, optical, and electrical properties of IGZTO thin films were investigated. The results show that all IGZTO thin films deposited at room temperature (RT) are amorphous and have a smooth and uniform surface with a low roughness (RMS of 0.441 nm, RA of 0.332 nm). They exhibit good average visible light transmittance (89.02~90.69%) and an optical bandgap of 3.47~3.56 eV. When the sputtering power is 90 W, the argon gas flow rate is 50 sccm, and the target-to-substrate distance is 60 mm, the IGZTO films demonstrate optimal electrical properties: carrier concentration (3.66 × 10¹⁹ cm⁻³), Hall mobility (29.91 cm²/Vs), and resistivity (0.54 × 10⁻² Ω·cm). These results provide a valuable reference for the property modulation of IGZTO films and the potential application in optoelectronic devices such as TFTs. Full article

Copper zinc tin sulfide (commonly known as CZTS) solar cells (SCs) are gaining attention as a promising technology for sustainable electricity generation owing to their cost-effectiveness, availability of materials, and environmental advantages. The goal of this study is to enhance CZTS SC performance by adding a back surface field (BSF) layer. SC capacitance simulator software (SCAPS) was used to examine three different configurations. Another option is to replace the cadmium sulfide (CdS) buffer layer with a titanium dioxide (TiO₂) layer. The results demonstrate that the reduced graphene oxide (rGO) BSF layer increases the conversion efficiency by 25.68% and significantly improves the fill factor, attributed to lowering carrier recombination and creating a quasi-ohmic contact at the interface between the metal and semiconductor. Furthermore, replacing the CdS buffer layer with TiO₂ offers potential efficiency gains and mitigates environmental concerns associated with the toxicity of CdS. The results of this investigation could enhance the efficiency and viability of CZTS SCs for future energy applications. However, it is observed that BSF layers may become less effective at elevated temperatures due to increased recombination, leading to reduced carrier lifetime. This study underlines valuable insights into optimizing CZTS SC performance through advanced material choices, highlighting the dual benefits of improved efficiency and reduced environmental impact. Full article

Solution-processed oxide thin-film transistors (TFTs) can lead to a significant cost-effective process and suitable for large-scale fabrication. However, they often face limitations, such as lower field-effect mobility, the use of indium which is toxic and rare, and degradation compared to vacuum-based technologies. The single-walled carbon nanotubes (SWNTs) were incorporated with zinc–tin oxide (ZTO) precursor solution without dispersants for the device’s active layer. Sol–gel solution-based ZTO/single-wall carbon nanotube (ZTO/SWNT) (TFTs) with various SWNT concentrations were fabricated to improve the performance of ZTO TFTs. ZTO TFTs containing SWNTs exhibited better electrical performance than those without SWNTs. Among the samples, the ZTO TFT with an SWNT concentration of 0.07 wt.% showed a field-effect mobility (μsat) of 13.12 cm²/Vs (increased by a factor of 3) and an I_on/I_off current ratio of 7.66 × 10⁷ with a lower threshold voltage. SWNTs in the ZTO/SWNTs acted as carrier transfer rods, playing a crucial role in controlling the electrical performance of ZTO TFTs. The proposed fabrication of a sol–gel solution-based process is highly compatible with existing processes because it brings ZTO/SWNT hybrid TFTs closer to practical application, opening up the possibilities for next-generation electronics in flexible devices and low-cost manufacturing. Full article

This study addresses the challenges of efficient, large-scale production of flexible transparent conducting electrodes (TCEs). We fabricate TCEs on polyethylene terephthalate (PET) substrates using a high-speed roll-to-roll (R2R) compatible method that combines gravure printing and photonic curing. The hybrid TCEs consist of Ag metal bus lines (Ag MBLs) coated with silver nanowires (AgNWs) and indium zinc oxide (IZO) layers. All materials are solutions deposited at speeds exceeding 10 m/min using gravure printing. We conduct a systematic study to optimize coating parameters and tune solvent composition to achieve a uniform AgNW network. The entire stack undergoes photonic curing, a low-energy annealing method that can be completed at high speeds and will not damage the plastic substrates. The resulting hybrid TCEs exhibit a transmittance of 92% averaged from 400 nm to 1100 nm and a sheet resistance of 11 Ω/sq. Mechanical durability is tested by bending the hybrid TCEs to a strain of 1% for 2000 cycles. The results show a minimal increase (<5%) in resistance. The high-throughput potential is established by showing that each hybrid TCE fabrication step can be completed at 30 m/min. We further fabricate methylammonium lead iodide solar cells to demonstrate the practical use of these TCEs, achieving an average power conversion efficiency (PCE) of 13%. The high-performance hybrid TCEs produced using R2R-compatible processes show potential as a viable choice for replacing vacuum-deposited indium tin oxide films on PET. Full article

Perovksite solar cells have emerged as a promising photovoltaic technology due to their high increasing power conversion efficiency (PCE). However, challenges related to thermal instability and material toxicity, especially in lead-based perovskites, bring the need to investigate alternative materials and structural designs. This study investigated the current–voltage and power–voltage characteristics of lead-free PSCs based on tin- and germanium using a two-diode equivalent circuit model. The novelty of this work was based on the intensive evaluation of three different electron transport layers (ETLs)—titanium dioxide (TiO₂), zinc oxide (ZnO), and tungsten trioxide (WO₃)—under different ambient temperature conditions (5 °C, 25 °C, and 55 °C) to study their impacts on device performance and the thermal stability. SCAPS-1D simulations were used to model the electrical and optical behaviors of the proposed perovskite structures, and the results were validated by using the two-diode model. The main performance parameters that were considered were open-circuit voltage, short-circuit current, maximum power point, and fill factor. The results showed that TiO₂ was better than ZnO and WO₃ as an ETL, achieving a PCE of 24.83% for Sn-based perovskites, and ZnO was the better choice for Ge-based perovskites at 25 °C, with an efficiency reaching ~15.39%. The three ETL materials showed high thermal stability when analyzing them at high ambient temperatures reaching 55 °C. Full article

Flexible polymer-based piezoelectric nanogenerators (PENGs) have gained significant interest due to their ability to deliver clean and sustainable energy for self-powered electronics and wearable devices. Recently, the incorporation of fillers into the ferroelectric polymer matrix has been used to improve the relatively low piezoelectric properties of polymer-based PENGs. In this study, we investigated the effect of various nanofillers such as titania (TiO₂), zinc oxide (ZnO), reduced graphene oxide (rGO), and lead zirconate titanate (PZT) on the PENG performance of the nanocomposite thin films containing the nanofillers in poly(vinylidene fluoride-co-trifluoro ethylene) (P(VDF-TrFE)) matrix. The nanocomposite films were prepared by depositing molecularly thin films of P(VDF-TrFE) and nanofiller nanoparticles (NPs) spread at the air/water interface onto the indium tin oxide-coated polyethylene terephthalate (ITO-PET) substrate, and they were characterized by measuring their microstructures, crystallinity, β-phase contents, and piezoelectric coefficients (d₃₃) using SEM, FT-IR, XRD, and quasi-static meter, respectively. Multiple PENGs incorporating various nanofillers within the polymer matrix were developed by assembling thin film-coated substrates into a sandwich-like structure. Their piezoelectric properties, such as open-circuit output voltage (V_OC) and short-circuit current (I_SC), were analyzed. As a result, the PENG containing 4 wt% PZT, which was named P-PZT-4, showed the best performance of V_OC of 68.5 V with the d₃₃ value of 78.2 pC/N and β-phase content of 97%. The order of the maximum V_OC values for the PENGs of nanocomposite thin films containing various nanofillers was PZT (68.5 V) > rGO (64.0 V) > ZnO (50.9 V) > TiO₂ (48.1 V). When the best optimum PENG was integrated into a simple circuit comprising rectifiers and a capacitor, it demonstrated an excellent two-dimensional power density of 20.6 μW/cm² and an energy storage capacity of 531.4 μJ within 3 min. This piezoelectric performance of PENG with the optimized nanofiller type and content was found to be superior when it was compared with those in the literature. This PENG comprising nanocomposite thin film with optimized nanofiller type and content shows a potential application for a power source for low-powered electronics such as wearable devices. Full article

Recently, the numerical simulation of solar cells has attracted tantamount scientific attention in the photovoltaic community because it saves on research time and resources before the actual fabrication of the devices in the laboratories. Despite significant advancements in the fabrication of quantum dot-sensitized solar cells (QDSSCs), the power conversion efficiency (PCE) is still low when compared to other solar cells such as perovskite. This efficiency gap poses a substantial challenge in harnessing the full potential of QDSSCs for widespread adoption in renewable energy applications. Enhancing the efficiency of QDSSCs is imperative for their commercial viability and widespread deployment. In this work, SCAPS-1D was used in the simulation of QDSSCs. The solar cell with a general configuration of FTO/TiO₂/PbS/HTL/Au was investigated. In the device, PbS quantum dots were inserted as the absorber layer, TiO₂ as the electron transport layer (ETL), gold as the back contact, and the following inorganic materials, i.e., copper (I) iodide (CuI), copper (I) oxide (Cu₂O), cadmium zinc telluride selenide (CZTSe), copper iron tin sulfide (CFTS), and copper zinc tin sulfide selenide (CZTSSe) were tested as HTL materials, and FTO acted as the conductive substrate. The best HTL material (CZTSSe) exhibited a PCE of 22.61%, with a fill factor (FF) of 84.67%, an open circuit voltage (V_oc) of 0.753 V, and a current density (J_sc) of 35.48 mA cm⁻². This study contributes to the field by employing SCAPS-1D simulations to optimize QDSSCs, exploring novel inorganic HTL materials for these solar cells and identifying CZTSSe as a promising low-cost HTL that significantly enhances both the performance and commercial viability of QDSSCs. Full article

Zinc–tin oxide (ZTO) thin films (ZnO)_x(SnO₂)_1−x with different material composition x (0 < x < 1) are deposited by spin coating on glass substrates at room temperature. The Differential Scanning Calorimetry (DSC) data of the precursor compounds show gradual phase transitions up to 480 °C. These data are used for an appropriate regime for thermal annealing of the layers. X-ray photoelectron spectroscopy (XPS) data show mixed oxide compound formation in states Zn²⁺, Sn⁴⁺ and O²⁻ of the constituents. Optical investigation manifests high transmittance above 80% in the visible spectral range and an optical band gap of 3.3–3.7 eV. The work functions vary between 4.1 eV and 5 eV, depending on the annealing, with deviations less than 1% for surface 1 mm² scans. Stack devices ITO/ZTO/metal with different metal contacts are formed. The I–V (current–voltage) measurements of the fabricated stacks exhibit Ohmic or nonlinear behavior, depending on the material composition and the work function levels. Full article