Search Results (28)

With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage. GaN-HEMT devices are subject to long-term reliability due to the self-heating effect and lattice mismatch between the SiC substrate and the GaN. Depletion-mode GaN HEMTs are utilized for radio frequency applications, and this work investigates three wide-bandgap (WBG) GaN HEMT fixed-frequency oscillators with output buffers. The first GaN-on-SiC HEMT oscillator consists of an HEMT amplifier with an LC feedback network. With the supply voltage of 0.8 V, the single-ended GaN oscillator can generate a signal at 8.85 GHz, and it also supplies output power of 2.4 dBm with a buffer supply of 3.0 V. At 1 MHz frequency offset from the carrier, the phase noise is −124.8 dBc/Hz, and the figure of merit (FOM) of the oscillator is −199.8 dBc/Hz. After the previous study, the hot-carrier stressed RF performance of the GaN oscillator is studied, and the oscillator was subject to a drain supply of 8 V for a stressing step time equal to 30 min and measured at the supply voltage of 0.8 V after the step operation for performance benchmark. Stress study indicates the power oscillator with buffer is a good structure for a reliable structure by operating the oscillator core at low supply and the buffer at high supply. The second balanced oscillator can generate a differential signal. The feedback filter consists of a left-handed transmission-line LC network by cascading three unit cells. At a 1 MHz frequency offset from the carrier of 3.818 GHz, the phase noise is −131.73 dBc/Hz, and the FOM of the 2nd oscillator is −188.4 dBc/Hz. High supply voltage operation shows phase noise degradation. The third GaN cross-coupled VCO uses 8-shaped inductors. The VCO uses a pair of drain inductors to improve the Q-factor of the LC tank, and it uses 8-shaped inductors for magnetic coupling noise suppression. At the VCO-core supply of 1.3 V and high buffer supply, the FOM at 6.397 GHz is −190.09 dBc/Hz. This work enhances the design techniques for reliable GaN HEMT oscillators and knowledge to design high-performance circuits. Full article

This paper presents a 0.8 V low-power CMOS voltage-controlled oscillator (VCO) with a wide tuning range, fabricated using a TSMC 0.18 μm process. The proposed design incorporates body-biasing techniques and an optimized varactor structure to achieve a tuning range of 1124 MHz (5.829–4.705 GHz) and low phase noise of −117.6 dBc/Hz at a 1 MHz offset. Operating at an ultra-low supply voltage of 0.8 V, the VCO consumes only 3.4 mW, demonstrating excellent power efficiency. A buffer circuit is also employed to enhance output symmetry and suppress flicker noise without introducing additional control complexity. With a figure-of-merit (FOM) of −188.6 dBc/Hz and a wide tuning range of 22.2%, the proposed VCO is well-suited for modern low-power communication systems, including 802.11ac, 5G transceivers, satellite links, and compact IoT devices. Full article

Wireless sensor networks (WSNs) for self-driving vehicles are growing rapidly, requiring high-performance radar systems with strong communication abilities. The key component of these systems is the voltage-controlled oscillator (VCO), which performs at 24 GHz with low phase noise, low power consumption, and a wide range of tuning. In this paper, the adaptive particle swarm optimization (PSO) algorithm incorporates adaptive scaling to speed up the optimization process. The new adaptive PSO minimizes the number of calculations required for complex engineering problems where rapid optimization is crucial and finding the best solution quickly is important. In order to test the adaptive PSO, benchmark functions are used. When applied to the proposed VCO circuit design, it facilitates more efficient adjustment of component values and improved performance, resulting in faster optimization. This optimized VCO achieves low phase noise of −120 dBc/Hz with a 1 MHz offset and a tuning range of 21.2%, operates at just 0.9 V, and consumes just 1.35 mW of power. A comparison of adaptive PSOs with traditional PSO methods shows that they improve the performance of the VCO, making them a promising choice for future automotive radar systems. Full article

In this paper, a novel Colpitts voltage-controlled oscillator (VCO) with low phase noise and an octave frequency tuning range is presented. To achieve low phase noise and a wide tuning range concurrently, the designed VCO employs quad-core-coupled structures, series resonators, dual-mode-coupled inductors, and push–push structures. The quad-core-coupled structures are used for phase noise improvement. The presented series resonators effectively expand the tuning range while reducing phase noise deterioration from amplitude-to-phase modulation (AM/PM) conversion. The dual-mode operation based on coupled inductors and quad-core structures further expands the tuning range. In addition, the adopted push–push structure increases the output frequency. Designed in a 180 nm SiGe BiCMOS process, the proposed Colpitts VCO operates from 7.2 to 14.5 GHz with an octave tuning range of 67.3%. The phase noise ranges from −131.4 to −121.8 dBc/Hz with a peak figure-of-merit (FoM) of 183.0 dBc/Hz and figure-of-merit-tuning (FoM_T) of 199.5 dBc/Hz at a 1 MHz offset. The proposed VCO exhibits superior performance in phase noise and tuning range and achieves an octave tuning range for the first time in Colpitts VCOs. Full article

This paper presents the design and the performance of a wide tuning-range millimeter-wave (mm-wave) two-core class-C 60 GHz VCO in 40 nm CMOS process, which can be integrated into wireless communication transceivers and radar sensors. The proposed architecture consists of a two-core 30 GHz fundamental VCO, a gain-boosted frequency doubler and an adaptive bias configuration. The two-core fundamental VCO structure achieves frequency generation in the vicinity of 30 GHz, where each VCO core targets a different frequency band. The two bands have sufficient overlap to accommodate for corner variations providing a large continuous tuning range. The desired frequency band is selected by activating or deactivating the appropriate VCO core, resulting in a robust switchless structure. This approach enables a considerably broad tuning range without compromising phase noise performance. Furthermore, the proposed topology utilizes an adaptive bias mechanism for robust start-up. Initially, the selected VCO core begins oscillating in class-B mode, and subsequently it transitions into class-C operation to offer improved performance. From post-layout simulations, after frequency doubling, the low-band VCO covers frequencies from 50.25 to 60.40 GHz, while the high-band VCO core spans frequencies from 58.8 to 73 GHz, yielding an overall tuning range of 36.92%. Owing to the gain-boosting topology, output power exceeds −14.2 dBm across the whole bandwidth. Simulated phase noise remains better than −92.1 dBc/Hz at a 1 MHz offset for all bands. Additionally, the two VCO cores never operate simultaneously, aiding in power efficiency. Full article

This paper proposes an adaptive acceleration lock compensation technology for phase-locked loops (PLLs) based on a novel dual-mode programmable ring voltage-controlled oscillator (ring-VCO). In addition, a time-to-digital converter (TDC) is designed to accurately quantify the phase difference from the phase frequency detector (PFD) in order to optimize the dead-zone effect while dynamically switching an auxiliary charge pump (CP) module to realize fast phase locking. Furthermore, a TDC-controlled three/five-stage dual-mode adaptively continuously switched VCO is proposed to optimize the phase noise (PN) and power efficiency, leading to an optimal performance tradeoff of the PLL. Based on the 180 nm/1.8 V standard CMOS technology, the complete PLL design and a corresponding simulation analysis are implemented. The results show that, with a 1 GHz reference signal as the input, the output frequency is 50–324 MHz, with a wide tuning range of 260 MHz and a low phase noise of −98.07 dBc/Hz@1 MHz. The key phase-locking time is reduced to 1.11 μs, and the power dissipation is lowered to 1.86 mW with a layout area of 66 μm × 128 μm. A significantly remarkable multiobjective performance tradeoff with topology optimization is realized, which is in contrast to several similar design cases of PLLs. Full article

This paper proposes a VCO-based ADC with first-order noise shaping for EEG signal recording front ends. Addressing the challenge of applying analog integrators in advanced processes due to low voltage issues, a multi-phase quantizer structure is introduced based on V-F conversion within the VCO structure, resulting in lower analog power consumption at the same output bit-width. By introducing a form of Gray code encoding, errors caused by circuit metastability are limited to within 1 bit. Considering the effects of motion artifacts and the electrode DC offset, the circuit achieves a wide input range of 500 m$V_{pp}$ by adjusting the feedback coefficients. A prototype ADC is fabricated using 180 nm CMOS technology, operating at a 1.8 V/1 V power supply voltage, with power consumption of 17.1 $\mathsf{\mu }$W, while achieving a 62.1 dB signal-to-noise and distortion ratio (SNDR) and 55.2 dB dynamic range (DR). The proposed ADC exhibits input noise of 8.64 $\mathsf{\mu }$$V_{rms}$ within a bandwidth of 0.5 Hz–5 kHz. Full article

In this paper, a wideband VCO that covers popular Long-Term Evolution (LTE) 0.7 GHz and LTE 2.6 GHz frequencies is designed and developed in a standard 0.18 μm CMOS process. The VCO utilizes active inductors to achieve coarse-tuning of the inductance and a compact chip area. Moreover, an active feedback resistor is introduced into the active inductor for fine-tuning of the inductance. The feedback resistor also affects the equivalent resistance of the active inductor; therefore, wide inductance tuning and low power consumption can be obtained by optimizing the resistor. The core area of the fabricated CMOS chip is merely 0.046 mm², excluding all testing pads. With a 6.7~10.1 mW DC consumption, the measured oscillation frequencies range from 0.73 GHz to 3.1 GHz, which demonstrates a 123.8% tuning range. At the frequencies of interest, the measured phase noises are from −80.7 to −84.5 dBc/Hz at a 1 MHz offset frequency. Full article

Short-range Internet of Things (IoT) sensor nodes operating at 2.4 GHz must provide ubiquitous wireless sensor networks (WSNs) with energy-efficient, wide-range output power (POUT). They must also be fully integrated on a single chip for wireless body area networks (WBANs) and wireless personal area networks (WPANs) using low-power Bluetooth (BLE) and Zigbee standards. The proposed fully integrated transmitter (TX) utilizes a digitally controllable current-mode class-D (CMCD) power amplifier (PA) with a second harmonic distortion (HD2) suppression to reduce VCO pulling in an integrated system while meeting harmonic limit regulations. The CMCD PA is divided into 7-bit slices that can be reconfigured between differential and single-ended topologies. Duty cycle distortion compensation is performed for HD2 suppression, and an HD2 rejection filter and a modified C-L-C low-pass filter (LPF) reduce HD2 further. Implemented in a 28 nm CMOS process, the TX achieves a wide P_OUT range of from 12.1 to −31 dBm and provides a maximum efficiency of 39.8% while consuming 41.1 mW at 12.1 dBm P_OUT. The calibrated HD2 level is −82.2 dBc at 9.93 dBm P_OUT, resulting in a transmitter figure of merit (TX_FoM) of −97.52 dB. Higher-order harmonic levels remain below −41.2 dBm even at 12.1 dBm P_OUT, meeting regulatory requirements. Full article

A new voltage-controlled oscillator (VCO) topology for serializer–deserializer (SerDes) applications is proposed in this paper. The topology is suitable for SATA, PCI Express, and USB 3 protocols. The VCO is based on two-ring oscillator cores and operates in several frequency bands, as required by the corresponding protocol specifications, with a constant VCO gain and improved linear control over the frequency tuning. Additionally, it is supported by an automatic digital compensation mechanism for process variations. The VCO has been designed to cover the several speeds of the SATA and PCI Express protocols, with optimized performance in all of them, including the current consumption, the phase noise, and the frequency tuning in each case. Designed in a CMOS 22 nm technology node with a 0.8 V supply voltage, it can achieve, at 3 GHz frequency, a phase noise better than −90 dBc/Hz at 1 MHz offset and an average power consumption equal to 3.84 mW. Extended digital control can set optimized configurations for phase noise, current consumption, and VCO gain vs. process variations. Extensive post-layout simulation results verify the superior performance. Full article

This paper presents the design and performance analysis of a wideband charge-pump phase-locked loop (CPPLL) characterized by low reference spur and low phase noise. The proposed CPPLL, operating as a wideband phase-locked loop (PLL) with a reference frequency of 100 MHz, achieves a wide tuning range of 40% from 2.0 GHz to 3.0 GHz. A clock feedthrough suppressed charge pump with additional bias current branches is used to reduce the PLL’s loop reference spur. The 4-stage current mode logic (CML) divide-by-2/3 circuit is utilized in the frequency divider to achieve high-speed frequency division. The circuit of an AND gate and latch in the 2/3 divider adopts a full differential symmetric structure to minimize the phase error of high-frequency differential signals. The voltage-controlled oscillator (VCO) is designed to provide a wide tuning range while optimizing the trade-off between the phase noise and power consumption. The fabricated PLL is implemented using a 0.13 µm CMOS process. Experimental measurements reveal a reference spur of −74.39 dBc at an oscillation frequency of 2.4 GHz. Moreover, the CPPLL achieves phase noise of −102.55 dBc/Hz@100 kHz and −127.15 dBc/Hz@1 MHz, while consuming 33.6 mW under a 1.2 V supply voltage. The integrated root-mean-square (rms) jitter, measured from 10 kHz to 10 MHz, is 340.99 fs, and the figure-of-merit (FoM) is −234.08 dB at a carrier frequency of 2.4 GHz, highlighting the potential of the proposed PLL for integrated circuit applications. Full article

Driven by needs in neuroscientific research, future neural interface technologies demand integrated circuits that can record a large number of channels of neural signals in parallel while maintaining a miniaturized physical form factor. Using conventional methods, it is challenging to reduce circuit area while maintaining the high dynamic range, low noise, and low power consumption required in the neural application. This paper proposes to address this challenge using a VCO-based continuous-time delta-sigma modulator (CTDSM) circuit, which can record and digitize neural signals directly without the need for front-end instrumentation amplifiers and anti-aliasing filters, which are limited by the abovementioned circuit-area performance tradeoff. Thanks to the multi-level quantization and intrinsic mismatch-shaping capabilities of the VCO-based approach, the proposed first-order CTDSM can achieve comparable electrical performance to a higher-order CTDSM while offering further area and power reductions. We prototyped the circuit in a 22-channel test chip and demonstrate, based on the chip measurement results, that the proposed modulator occupies an area of 0.00426 mm² while achieving input-referred noise levels of 6.26 and 3.54 µV_rms in the action potential (AP) and local field potential (LFP) bands, respectively. With a 77.6 dB wide-dynamic range, the noise and total harmonic distortion meet the requirements of a neural interface with up to 149 mV_pp input AC amplitude or up to ±68 mV DC offsets. We also validated the feasibility of the circuit for multi-channel recording applications by examining the impact of cross-channel VCO oscillation interferences on the circuit noise performance. The experimental results demonstrate the proposed architecture is an excellent candidate to implement future multi-channel neural-recording interfaces. Full article

Clocks are widely used in multimedia and electronic devices, and they usually have different frequency demands. This paper presents the design of a multi-output clock generator using an analog integer-N phase-locked loop (PLL) and open-loop fractional dividers. The PLL based on a three-stage ring voltage-controlled oscillator (VCO) is used to transform the lower frequency reference into a high-frequency intermediate clock (600 MHz–900 MHz). Then, relying on the open-loop fractional divider, a wide frequency range of 500 kHz to 150 MHz can be generated. Due to the open-loop control characteristic, the clock generator has instantaneous frequency switching capability. In addition, phase-adjusting circuits added to the divider greatly improved the jitter performance of the output clock; its RMS jitter is 5.2 ps. This work was conducted with 0.13 μm CMOS technology. The open-loop divider occupies an area of 0.032 mm² and consumes 7.7 mW from a 1.2 V supply. Full article

Based on a self-biased architecture, this paper presents a novel adaptive fast-locking, wide operating range and low-jitter phase-locked loop (PLL). A current injection and adaptive bandwidth technology with minimum area overhead is employed to speed up the loop equilibrium acquisition process, without any adverse impact on the steady-state loop dynamics and the jitter performance. The proposed start-up circuit resets the loop to an appropriate initial state in order to shorten the initial ramp-up interval of the voltage-controlled oscillator (VCO), also resulting in cutting down the pull-in time. In addition, a proportional factor is introduced to give some kind of flexibility in the circuit design optimization. The proposed adaptive fast-locking self-biased PLL (AFL-SPLL) is designed and realized in a prototype based on TSMC 28 nm CMOS process, having a supply voltage of 0.9 V and an area of 0.0281 mm². This PLL demonstrates a tuning range of 1 to 3 GHz and power consumptions from 0.91 mW at 1 GHz to 4.6 mW at 3 GHz operating frequency. The experimental results show that the capture process has been accelerated by up to 84.7% over large division ratios, yet the capture performance did not deteriorate at all for small division ratios. Meanwhile, the circuit implementation gave almost no area increase and yet achieved a reduction in the lock-in time of about 6.5 times, namely from 23.5 μs (without the adaptive locking) to only 3.6 μs (with the adaptive locking) on the maximum operation frequency condition of 3 GHz. Full article

This paper presents a four-core LC-VCO array in 55 nm CMOS technology. Based on the multi-core VCO array technology and the switched capacitor array technology, the tuning range is expanded, and the phase noise optimization in a wide tuning range is achieved based on the second harmonic noise filtering technology and the Q value degeneration technology, as well as the optimization of the capacitor array switching transistors. The proposed VCO array, occupying a chip area of 1.65 × 1.44 mm², realizes a measured oscillation frequency range of about 3.7−10 GHz with phase noise of −127.5~−116.08 dBc/Hz at 1 MHz frequency offset, and achieves an output power of 2.69 dBm from a total power consumption of 52.8 mW. Full article