Search Results (36)

The ultra-wide bandgap semiconductor β-Ga₂O₃ is a promising material for next-generation optoelectronic systems and hybrid nanodevices. However, high interface state densities and anomalous trap-assisted leakage severely restrict its performance and signal transduction capabilities. To resolve these fundamental limitations, we investigated a two-dimensional h-BN interlayer to construct a high-quality heterogeneous metal/h-BN/β-Ga₂O₃ structure using experimentally calibrated Sentaurus TCAD simulations. Energy-band analysis and validated I–V simulations reveal that the low-dimensional h-BN interlayer reconstructs the interfacial barrier, suppresses interface-assisted recombination, and shifts the dominant carrier transport from thermionic emission to Fowler–Nordheim tunneling. These effects markedly reduce the interface-state density and effectively suppress the Shockley–Read–Hall recombination current, mechanisms that are critical for minimizing dark current and improving device sensitivity. After systematically examining the effects of key parameters on the electrical characteristics of this hybrid architecture, we quantify the tradeoff between threshold voltage and on-resistance using a comprehensive figure of merit. Specifically, our results indicate that maximum device efficiency is achieved only when an optimal h-BN thickness of 3.56–5.88 nm (10–17 atomic layers) is strategically integrated with the appropriate metal work function and semiconductor doping. Overall, this work suggests the potential advantage of 2D h-BN in mitigating the interfacial bottleneck of traditional β-Ga₂O₃ platforms, providing quantitative design guidelines and theoretical support for the heterogeneous integration of next-generation optoelectronic devices. Full article

Carbon nanotube (CNT) networks are promising candidate channel materials for thin-film transistors (TFTs). However, the charge trapping characteristics underlying the gate hysteresis effect still remain unclear. Herein, high-performance CNT TFTs with good consistencies were fabricated to investigate the hysteresis-induced performance variations and the dynamic charge trapping/releasing behaviors at different gate biases. Both the subthreshold and suprathreshold characteristics of the TFTs are remarkably changed under different gate sweeping directions. The origin of gate hysteresis was illustrated by comparing the effects of gas desorption and selective re-adsorption, and the adsorbed O₂ and H₂O make different contributions related to specific charge trapping characteristics. We further demonstrate that the dynamic charge trapping/releasing processes are governed by the applied gate biases, revealing the equivalency between the positive charge trapping and negative charge releasing processes, and vice versa. The time-dependent degradation of the on-state current has been fitted to perform a statistical analysis based on the measurement results of eight devices. Three characteristic time constants have been determined, corresponding to a multi-step trapping process that may be dominated by dielectric surface trapping and trap-assisted tunneling into the bulk defects in the dielectric layer near the CNTs and those in depth, respectively. Full article

Dark current represents a fundamental limiting factor in photodiode performance, establishing the noise floor and constraining detectivity in low-light applications. This comprehensive literature review examines publications covering the physical mechanisms underlying dark current generation and diverse techniques employed for its reduction. Covered mechanisms include diffusion current, Shockley–Read–Hall (SRH) generation–recombination, trap-assisted tunneling, band-to-band tunneling, and surface leakage, each examined with respect to its physical origin and characteristic signatures. Reduction strategies are categorized into thermal management approaches, surface passivation techniques including atomic-layer-deposited aluminum oxide (ALD Al₂O₃), guard ring architectures (attached, floating, and combined configurations), gettering and defect engineering methods, doping profile optimization, bias voltage management, and advanced device architectures such as pinned photodiodes and black silicon structures. A classification table organizes all the reviewed literature by material system, reduction technique, and key findings. Special emphasis is placed on silicon, germanium, III–V compounds, and emerging material photodiodes relevant to near-infrared detection, CMOS imaging, single-photon avalanche diodes (SPADs), and Time-of-Flight (ToF) applications. Full article

In this work, a high-performance mid-wave infrared (MWIR) photodetector (PD) utilizing an InAs/GaSb Type-II superlattice absorber and a quaternary AlGaAsSb barrier is designed and analyzed based on numerical simulations aimed at determining an optimized detector structure. Through these simulations, the composition of the AlGaAsSb barrier is carefully designed to achieve lattice matching, high conduction band offset and zero valence band offset. By optimizing the barrier thickness and doping concentration, the depletion region is effectively shifted from the narrow-bandgap absorber to the wide-bandgap barrier; additionally, at 150 K and a reversed bias of 0.05 V, the dark current density in the PD with the barrier (pBn) is reduced to 1.83 × 10⁻⁵ A/cm², about two orders of magnitude lower than that of the PD without the barrier. Furthermore, the effect of the barrier on the generation–recombination (G-R) and the trap-assisted tunneling (TAT) currents are analyzed and compared in detail, and it is found that the barrier structure is much more effective in suppressing the TAT current at low reversed bias when the electric field is low in the absorber layer. These results demonstrate the efficacy of the proposed AlGaAsSb barrier design for realizing high-operating-temperature MWIR PDs. It also provides an insight into the physical mechanism that leads to the performance enhancement of InAs/GaSb PDs. Full article

In this work, floating-gate organic field-effect transistor memory using the n-type semiconductor poly-{[N,N′-bis(2-octyldodecyl) naphthalene-1,4,5,8-bis (dicarbo- ximide)-2,6-dili]-alt-5,5′-(2,2′-bithiophene)} (N2200) as a charge-trapping layer is presented. With the assistance of a technology computer-aided design (TCAD) tool (Silvaco-Atlas), the storage characteristics of the device are numerically simulated by using the carrier injection and Fower–Nordheim (FN) tunneling models. The shift in the transfer characteristic curves and the charge-trapping mechanism after programming/erasing (P/E) operations under different P/E voltages and different pulse operation times are discussed. The impacts of different thicknesses of the tunneling layer on storage characteristics are also analyzed. The results show that the memory window with a tunneling layer thickness of 8 nm is 16.1 V under the P/E voltage of ±45 V, 5 s. After 1000 cycle tests, the memory shows good fatigue resistance, and the read current on/off ratio reaches 10³. Full article

This paper presents a method for modeling ReRAM in TCAD and validating its accuracy for neuromorphic systems. The data obtained from TCAD are used to analyze the accuracy of the neuromorphic system. The switching behaviors of ReRAM are implemented using the kinetic Monte Carlo (KMC) approach. Realistic ReRAM characteristics are obtained through the use of the trap-assisted tunneling (TAT) model and thermal equations. HfO₂-Al₂O₃-based ReRAM offers improved switching behaviors compared to HfO₂-based ReRAM. The variation in conductance depends on the structure of the ReRAM. The conductance extracted from TCAD is validated in the neuromorphic system using the MNIST (Modified National Institute of Standards and Technology) dataset. Full article

The obtention of luminescent SiO_xC_y:H thin films deposited by the HW-CVD technique is reported here. We study the effect of different monomethyl-silane (MMS) flow rates on the films properties. An increase in the emission bandwidth and a red-shift was observed when the MMS flow increased. The luminescence was related to optical transitions in band tail states and with less contribution from quantum confinement effects. After, the films were annealed at 750 °C in nitrogen. The annealed film deposited at the highest MMS flow showed an emission spectrum like the as-deposited film, suggesting the same emission mechanisms. By contrast, the annealed film deposited at the lowest MMS flow showed two emission bands. These bands are due to the activation of radiative defects related to oxygen-deficient centers. MOS-like structures were fabricated as electroluminescent devices using the annealed films. Only the structure of the film with the highest carbon content showed light emission in a broad band in the visible spectrum region in forward bias, with a maximum centered close to 850 nm. The light emission mechanism was related to electron thermalization in the band tail states and a direct hole injection into deep states. The trap-assisted tunneling, Poole–Frenkel emissions and Fowler–Nordheim tunneling were proposed as the charge transport mechanism. Full article

Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composition, vacuum ultraviolet (VUV) irradiation, and plasma treatment on the electrical properties of these films. Through an extensive survey of literature and experimental findings, we elucidate the intricate interplay between these factors and the resulting alterations in electrical conductivity, dielectric constant, and breakdown strength of OSG films. Key focus areas include the impact of diverse organic moieties incorporated into the silica matrix, the effects of VUV irradiation on film properties, and the modifications induced by various plasma treatment techniques. Furthermore, the underlying mechanisms governing these phenomena are discussed, shedding light on the complex molecular interactions and structural rearrangements occurring within OSG films under different environmental conditions. It is shown that phonon-assisted electron tunneling between adjacent neutral traps provides a more accurate description of charge transport in OSG low-k materials compared to the previously reported Fowler–Nordheim mechanism. Additionally, the quality of low-k materials significantly influences the behavior of leakage currents. Materials retaining residual porogens or adsorbed water on pore walls show electrical conductivity directly correlated with pore surface area and porosity. Conversely, porogen-free materials, developed by Urbanowicz, exhibit leakage currents that are independent of porosity. This underscores the critical importance of considering internal defects such as oxygen-deficient centers (ODC) or similar entities in understanding the electrical properties of these materials. Full article

Recent progress towards understanding the mechanism of dynamical tunneling in Hamiltonian systems with three or more degrees of freedom (DoF) is reviewed. In contrast to systems with two degrees of freedom, the three or more degrees of freedom case presents several challenges. Specifically, in higher-dimensional phase spaces, multiple mechanisms for classical transport have significant implications for the evolution of initial quantum states. In this review, the importance of features on the Arnold web, a signature of systems with three or more DoF, to the mechanism of resonance-assisted tunneling is illustrated using select examples. These examples represent relevant models for phenomena such as intramolecular vibrational energy redistribution in isolated molecules and the dynamics of Bose–Einstein condensates trapped in optical lattices. Full article

The ability of particles to “tunnel” through potential energy barriers is a purely quantum phenomenon. A classical particle in a symmetric double-well potential, with energy below the potential barrier, will be trapped on one side of the potential well. A quantum particle, however, can sit on both sides, in either a symmetric state or an antisymmetric state. An analogous phenomenon occurs in conservative classical systems with two degrees of freedom and no potential barriers. If only the energy is conserved, the phase space will be a mixture of regular “islands” embedded in a sea of chaos. Classically, a particle sitting in one regular island cannot reach another symmetrically located regular island when the islands are separated by chaos. However, a quantum particle can sit on both regular islands, in symmetric and antisymmetric states, due to chaos-assisted tunneling. Here, we give an overview of the theory and recent experimental observations of this phenomenon. Full article

The oxides of group 14 have been widely used in numerous applications in glass, ceramics, optics, pharmaceuticals, and food industries and semiconductors, photovoltaics, thermoelectrics, sensors, and energy storage, namely, batteries. Herein, we simulate and experimentally determine by scanning kelvin probe (SKP) the work functions of three oxides, SiO₂, SiO, and SnO₂, which were found to be very similar. Electrical properties such as electronic band structure, electron localization function, and carrier mobility were also simulated for the three crystalline oxides, amorphous SiO, and surfaces. The most exciting results were obtained for SiO and seem to show Poole–Frankel emissions or trap-assisted tunneling and propagation of surface plasmon polariton (SPP) with nucleation of solitons on the surface of the Aluminum. These phenomena and proposed models may also describe other oxide-metal heterojunctions and plasmonic and metamaterials devices. The SiO₂ was demonstrated to be a stable insulator interacting less with the metals composing the cell than SnO₂ and much less than SiO, configuring a typical Cu/SiO₂/Al cell potential well. Its surface charge carrier mobility is small, as expected for an insulator. The highest charge carrier mobility at the lowest conduction band energy is the SnO₂’s and the most symmetrical the SiO’s with a similar number of electron holes at the conduction and valence bands, respectively. The SnO₂ shows it may perform as an n-type semiconductor. Full article

We investigated the temperature-dependent reverse characteristics (J_R-V_R-T) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent characterizations were performed, and the observed reverse current was modeled through technology computer-aided design. Different levels of current were observed in both forward and reverse biases for the ET and non-ET devices, which suggested a change in the conduction mechanism for the observed leakages. The measured J_R-V_R-T characteristics of the non-edge-terminated device were successfully fitted in the entire temperature range with the phonon-assisted tunneling model, whereas for the edge-terminated device, the reverse characteristics were modeled by taking into account the emission of trapped electrons at a high temperature and field caused by Poole–Frenkel emission. Full article

Heteroepitaxial growth of high Al-content AlGaN often results in a high density of threading dislocations and surface hexagonal hillocks, which degrade the performance and reliability of AlGaN-based UVC light emitting diodes (LEDs). In this study, the degradation mechanism and impurity/defect behavior of UVC LEDs in relation to the hexagonal hillocks have been studied in detail. It was found that the early degradation of UVC LEDs is primarily caused by electron leakage. The prominent contribution of the hillock edges to the electron leakage is unambiguously evidenced by the transmission electron microscopy measurements, time-of-flight secondary ion mass spectrometry, and conductive atomic force microscopy. Dislocations bunching and segregation of impurities, including C, O, and Si, at the hillock edges are clearly observed, which facilitate the trap-assisted carrier tunneling in the multiple quantum wells and subsequent recombination in the p-AlGaN. This work sheds light on one possible degradation mechanism of AlGaN-based UVC LEDs. Full article

The manipulation of single molecules has attracted extensive attention because of their promising applications in chemical, biological, medical, and materials sciences. Optical trapping of single molecules at room temperature, a critical approach to manipulating the single molecule, still faces great challenges due to the Brownian motions of molecules, weak optical gradient forces of laser, and limited characterization approaches. Here, we put forward localized surface plasmon (LSP)-assisted trapping of single molecules by utilizing scanning tunneling microscope break junction (STM-BJ) techniques, which could provide adjustable plasmonic nanogap and characterize the formation of molecular junction due to plasmonic trapping. We find that the plasmon-assisted trapping of single molecules in the nanogap, revealed by the conductance measurement, strongly depends on the molecular length and the experimental environments, i.e., plasmon could obviously promote the trapping of longer alkane-based molecules but is almost incapable of acting on shorter molecules in solutions. In contrast, the plasmon-assisted trapping of molecules can be ignored when the molecules are self-assembled (SAM) on a substrate independent of the molecular length. Full article

We reported the analysis and modeling of some conduction mechanisms in ultrathin aluminum oxide (Al₂O₃) films of 6 nm thickness, which are deposited by atomic layer deposition (ALD). This modeling included current-voltage measurements to metal-insulator-semiconductor (MIS) capacitors with gate electrode areas of 3.6 × 10⁻⁵ cm² and 6.4 × 10⁻⁵ cm² at room temperature. The modeling results showed the presence of ohmic conduction, Poole Frenkel emission, Schottky emission, and trap-assisted tunneling mechanisms through the Al₂O₃ layer. Based on extracted results, we measured a dielectric conductivity of 5 × 10⁻¹⁵ S/cm at low electric fields, a barrier height at oxide/semiconductor interface of 2 eV, and an energy trap level into bandgap with respect to the conduction band of 3.11 eV. These results could be affected by defect density related to oxygen vacancies, dangling bonds, fixed charges, or interface traps, which generate conduction mechanisms through and over the dielectric energy barrier. In addition, a current density model is developed by considering the sum of dominant conduction mechanisms and results based on the finite element method for electronic devices, achieving a good match with experimental data. Full article