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Keywords = silicon photomultipliers

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32 pages, 795 KB  
Article
Modeling the Variance of Passive SiPMs in the Nonlinear Regime
by Víctor Moya and Jaime Rosado
Sensors 2026, 26(17), 5579; https://doi.org/10.3390/s26175579 - 2 Sep 2026
Viewed by 181
Abstract
Silicon photomultipliers (SiPMs) are widely used in high-energy physics, medical imaging, and other photon-counting applications. While their nonlinear response at high light intensities is well known, its impact on the statistical fluctuations of the detector output remains much less understood. In this work, [...] Read more.
Silicon photomultipliers (SiPMs) are widely used in high-energy physics, medical imaging, and other photon-counting applications. While their nonlinear response at high light intensities is well known, its impact on the statistical fluctuations of the detector output remains much less understood. In this work, we develop an analytical framework for the variance of the charge response of passive-quenching SiPMs in the two limiting cases of instantaneous light pulses and pulses much longer than the pixel recovery time. Based on these exact results, we propose a phenomenological model that describes the variance of the SiPM charge response for arbitrary pulse durations while accounting for pixel recovery and correlated noise. The resulting framework is then used to predict the photon-counting resolution over the full dynamic range of the detector. The model is validated through Monte Carlo simulations and experimental measurements performed with laser, LED, and scintillation light sources. The results show that the optimal photon-counting resolution is generally reached well beyond the onset of nonlinear response, since pixel saturation introduces sub-Poissonian fluctuations that partially compensate for the nonlinear compression of the SiPM response. These findings provide a practical framework for predicting photon-counting resolution and optimizing the operation of passive SiPMs over a wide dynamic range. Full article
(This article belongs to the Special Issue Recent Advances in Silicon Photonic Sensors)
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23 pages, 1699 KB  
Review
Underwater Optical Communications: From Photodiodes to Single-Photon Detectors
by Zbigniew Bielecki and Janusz Mikołajczyk
Photonics 2026, 13(8), 752; https://doi.org/10.3390/photonics13080752 - 10 Aug 2026
Viewed by 324
Abstract
Underwater wireless optical communication (UWOC) has emerged as a key technology for high-speed, low-latency data transmission in aquatic environments, enabling applications in autonomous underwater vehicles (AUVs), remotely operated vehicles (ROVs), subsea sensor networks, and the Internet of Underwater Things (IoUT). This paper reviews [...] Read more.
Underwater wireless optical communication (UWOC) has emerged as a key technology for high-speed, low-latency data transmission in aquatic environments, enabling applications in autonomous underwater vehicles (AUVs), remotely operated vehicles (ROVs), subsea sensor networks, and the Internet of Underwater Things (IoUT). This paper reviews photodetector technologies that shape UWOC system performance, covering both mature and emerging detector classes. We discuss the operating principles, key parameters, and practical trade-offs of photomultiplier tubes (PMTs), p-i-n photodiodes (PINs), avalanche photodiodes (APDs), single-photon avalanche diodes (SPADs), and silicon photomultipliers (SiPMs/MPPCs). We also present emerging photodetector technologies, including perovskite-based structures, SiC photoelectrochemical devices, scintillating optical fibers, and photovoltaic solar cells. A comparative analysis of reported UWOC experiments reveals a clear sensitivity–bandwidth trade-off among detector technologies: PIN-based receivers achieve the highest data rates (up to 25 Gbps) but are generally restricted to short-range links, whereas SPAD- and SiPM-based receivers provide sensitivities below −80 dBm and support transmission distances exceeding 200 m, at the cost of moderate data rates. The findings indicate that SiPM/MPPC arrays currently offer the most promising compromise between sensitivity and data rate for long-range UWOC applications. Full article
(This article belongs to the Special Issue Free-Space Optical Communication and Networking Technology)
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18 pages, 2432 KB  
Article
Luminescence Efficiency of GAGG:Ce Inorganic Scintillators for X-Ray Imaging Applications
by Anastasios Dimitrakopoulos, Christos Michail, Ioannis Valais, George Fountos, Ioannis Kandarakis and Nektarios Kalyvas
Inorganics 2026, 14(7), 189; https://doi.org/10.3390/inorganics14070189 - 16 Jul 2026
Viewed by 826
Abstract
Single-crystal scintillators are used to convert ionizing radiation into optical photons in various medical imaging applications. A promising material is cerium (Ce)-doped gadolinium aluminum gallium garnet (GAGG:Ce) inorganic scintillator. Three GAGG:Ce 10 × 10 × 10 mm3 crystals of different light yield [...] Read more.
Single-crystal scintillators are used to convert ionizing radiation into optical photons in various medical imaging applications. A promising material is cerium (Ce)-doped gadolinium aluminum gallium garnet (GAGG:Ce) inorganic scintillator. Three GAGG:Ce 10 × 10 × 10 mm3 crystals of different light yield (LY) were exposed in X-ray tube voltage range of 50–140 kVp. Their absolute luminescence efficiency (AE) was experimentally calculated. A theoretical model was employed to simulate the propagation of photons traversing through the crystal mass. The model was utilized to estimate the detector quantum gain (DQG) and the percentage of transmission of the optical photons per elementary thickness k. Their suitability with various optical photodetectors was evaluated by means of the spectral matching factor (SMF). GAGG:Ce presented AE values reaching 60.72 E.U. (where 1 E.U. = 1 μWm−2/(mRs−1)) at 140 kVp. The parameter k ranged from 0.99973 to 0.99980. GAGG:Ce emission spectrum is highly compatible with charged-coupled devices (CCD), complementary metal-oxide semiconductors (CMOS) and silicon photomultipliers (SiPM). These findings may further consolidate the use of GAGG:Ce and could contribute to the future optimization of this inorganic scintillator when applied in X-ray imaging modalities, or as a radiation detector. Full article
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14 pages, 459 KB  
Article
First-Order Statistic of Afterpulsing and Crosstalk Events in Silicon Photomultipliers
by Sergey Vinogradov
Sensors 2026, 26(14), 4432; https://doi.org/10.3390/s26144432 - 13 Jul 2026
Viewed by 440
Abstract
This paper presents an order statistic approach to the time distribution of the first detected event following a primary avalanche pulse, considering a mixture of correlated and primary dark counts. The well-known order statistic method, commonly used to describe the time resolution of [...] Read more.
This paper presents an order statistic approach to the time distribution of the first detected event following a primary avalanche pulse, considering a mixture of correlated and primary dark counts. The well-known order statistic method, commonly used to describe the time resolution of scintillation detectors, is applied to the arrival times of correlated events. The established model of crosstalk as a branching Poisson process is extended to afterpulsing, and correlated events are analyzed starting from their initial seeds—free (detrapped or diffused) charge carriers capable of triggering secondary avalanche breakdowns. The proposed approach enables the extraction of true timing information for delayed crosstalk and afterpulsing and predicts a narrowing of the first arrival time distribution as the number of seeds and the probability of correlated events increase. Full article
(This article belongs to the Special Issue Advanced Silicon Photomultiplier Based Sensors)
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23 pages, 2070 KB  
Article
Studies of the Modular COsmic Ray Detector (MCORD) Using an Automatic Temperature Control Loop to Maintain Constant Gain Parameters of Semiconductor SiPM Photomultipliers
by Marcin Bielewicz, Michał Kiecana, Aleksandr Bancer, Jarosław Grzyb, Martyna Grodzicka-Kobyłka, Tomasz Szczęśniak, Konrad Kopański, Wojciech Noga, Elżbieta Jaworska, Łukasz Kaźmierczak, Gabriela Saworska, Andrzej Brosławski and Piotr Mazerewicz
Sensors 2026, 26(14), 4356; https://doi.org/10.3390/s26144356 - 9 Jul 2026
Viewed by 432
Abstract
The Modular Cosmic Ray Detector (MCORD) is a modular scintillator-based system employing silicon photomultipliers (SiPMs) and FPGA-based digital signal processing, designed for applications such as cosmic muon detection, veto systems, and detector calibration support. In this work, we investigate the influence of ambient [...] Read more.
The Modular Cosmic Ray Detector (MCORD) is a modular scintillator-based system employing silicon photomultipliers (SiPMs) and FPGA-based digital signal processing, designed for applications such as cosmic muon detection, veto systems, and detector calibration support. In this work, we investigate the influence of ambient temperature variations on detector performance, with particular emphasis on SiPM gain stability. Several automatic temperature compensation loops were implemented to stabilize the operating voltage of the sensors. Based on controlled laboratory measurements, we evaluate the effectiveness of different control strategies, including variations in temperature averaging time and threshold response criteria. The performance of each approach is compared in terms of gain stability and response dynamics. We identify the optimal temperature control configuration for planned MCORD measurements and present recent modifications to the detector electronics, including updated software for Analog Front End (AFE) control. Additionally, we describe modifications made to the detector’s electronics since the previous publication, including new software developed to control AFE electronics. Full article
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20 pages, 5232 KB  
Article
Prototype Scintillating-Fiber SiPM-Based Beam Monitor for Conventional and FLASH Proton Therapy
by Georgios Mystridis, Fabio Acerbi and Benedetto Di Ruzza
Instruments 2026, 10(3), 36; https://doi.org/10.3390/instruments10030036 - 2 Jul 2026
Viewed by 517
Abstract
The development of FLASH particle therapy, especially proton therapy, characterized by ultra-high dose rates (>40 Gy/s), presents significant challenges for dosimetry and beam monitoring. For example, ionization chambers (ICs) exhibit charge recombination effects leading to saturation, and other passive detectors cannot be used [...] Read more.
The development of FLASH particle therapy, especially proton therapy, characterized by ultra-high dose rates (>40 Gy/s), presents significant challenges for dosimetry and beam monitoring. For example, ionization chambers (ICs) exhibit charge recombination effects leading to saturation, and other passive detectors cannot be used for real-time monitoring. This paper presents the idea, simulations and the preliminary prototype of a scintillating-fibers SiPM-based dosimeter for both high-flux and conventional dose-rate proton beam therapy. The prototype is based on 1 mm diameter plastic scintillating fibers, coupled to Silicon Photomultipliers (SiPMs). We estimated the interactions and the produced light signal within the fibers by the protons and towards the photodetectors using a semi-analytical model combining SRIM and analytical calculations. We estimated a light signal reaching the SiPMs in the range of 107–1011 photons (in a 50 ms beam pulse), for proton energies in the range 70–228 MeV, between the minimum and maximum beam current levels for conventional and FLASH conditions. Results highlight the very large dynamic range needed to be compatible with conventional and FLASH regimes. We also evaluated the linearity limits of the SiPMs and of the scintillating fibers. Finally, we preliminarily validated a reduced prototype version with a proton beam, demonstrating a good linearity of the system. Full article
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10 pages, 3663 KB  
Article
Study of the Effects of Radiation Exposure on the Parameters of Selected Silicon Photomultipliers
by Ian G. Bearden, Valentin Buchakchiev, Daniel Ivanov, Mira Gencheva, Venelin Kozhuharov and Yury A. Melikyan
Signals 2026, 7(3), 49; https://doi.org/10.3390/signals7030049 - 29 May 2026
Viewed by 356
Abstract
Silicon photomultipliers (SiPMs) have become widely used as photodetectors in high-energy physics, nuclear physics, medical imaging, and space applications. In many of these fields, SiPMs are required to operate in high-radiation environments, which are notoriously problematic for silicon sensors. For this reason, it [...] Read more.
Silicon photomultipliers (SiPMs) have become widely used as photodetectors in high-energy physics, nuclear physics, medical imaging, and space applications. In many of these fields, SiPMs are required to operate in high-radiation environments, which are notoriously problematic for silicon sensors. For this reason, it is essential to study the changes in their performance characteristics after exposure to radiation. In this study, a number of SiPM samples were exposed to non-uniform radiation at the CHARM facility at CERN. Half of the samples were operated above breakdown during the test, while others remained off. Intermittent measurements allowed for tracking the changes in I-V curves and signal shapes during the irradiation itself. The focus was on detecting differences in irradiation damage between the operational and non-operational SiPM samples. The I-V curves and signal shapes in both cases for three different types of SiPM are presented, and a comparison is made. Full article
(This article belongs to the Special Issue Ionizing Radiation Signal Propagation, Measurement, and Simulation)
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25 pages, 5598 KB  
Article
NanoArduSiPM: A Miniaturized Integrated Platform for Scalable Scintillation-Based Particle Detection
by Valerio Bocci, Giacomo Chiodi, Francesco Iacoangeli, Alberto Merola, Luigi Recchia, Roberto Ammendola, Davide Badoni, Marco Casolino, Laura Marcelli, Gianmaria Rebustini, Enzo Reali and Matteo Salvato
Sensors 2026, 26(10), 3135; https://doi.org/10.3390/s26103135 - 15 May 2026
Viewed by 533
Abstract
NanoArduSiPM represents a paradigm shift in the ArduSiPM (Architected Detection Unit for Silicon Photomultipliers) roadmap, evolving from a standalone instrument into a high-density modular building block (36 mm × 42 mm × 3 mm, 7 g). This revision does not merely pursue miniaturization; [...] Read more.
NanoArduSiPM represents a paradigm shift in the ArduSiPM (Architected Detection Unit for Silicon Photomultipliers) roadmap, evolving from a standalone instrument into a high-density modular building block (36 mm × 42 mm × 3 mm, 7 g). This revision does not merely pursue miniaturization; it re-engineers the signal-processing chain to maintain high performance within a scaled-down footprint, enabling the transition from single-unit detection to scalable, distributed multi-detector systems. NanoArduSiPM is based on a three-layer architecture comprising an external scintillator and Silicon Photomultiplier (SiPM) detection module, a dedicated high-speed discrete analog front-end, and a System-on-Chip (SoC) for embedded acquisition and processing. The physical implementation adopts high-integrity PCB routing and rigorous isolation techniques designed to suppress digital–analog coupling, a critical requirement in such a compact form factor. This deterministic layout strategy provides the architectural foundation for time-tagging capabilities, currently under quantitative characterization, by addressing the fundamental sources of signal interference at the hardware level. Beyond hardware integration, NanoArduSiPM introduces the capability for extended firmware functionality, including event tagging via external inputs and the implementation of coincidence and veto logic. This framework supports the acquisition of multiple correlated histograms and allows multiple units to be interconnected on a shared SPI bus. By shifting from standalone operation to a coordinated, hierarchical architecture, NanoArduSiPM enables distributed detection schemes where event selection and correlation are handled natively within the system, reducing the dependency on external data acquisition electronics. The compact modular architecture, together with the high-performance discrete analog front-end and embedded data handling, makes NanoArduSiPM suitable for applications where low mass and low power consumption are critical, targeting applications such as space-based payloads, laboratory instrumentation, remote sensing, and large-scale distributed multi-channel detection systems. While no radiation-tolerance qualification of the complete system has been performed in this work, the microcontroller family used in the design is also available in radiation-tolerant variants, which may support future implementations targeting more demanding radiation environments. Full article
(This article belongs to the Section Physical Sensors)
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31 pages, 12567 KB  
Article
Development of a Cherenkov-Based Time-of-Flight Detector Using Silicon Photomultipliers
by Liliana Congedo, Giuseppe De Robertis, Antonio Di Mauro, Mario Giliberti, Francesco Licciulli, Antonio Liguori, Rocco Liotino, Leonarda Lorusso, Mario Nicola Mazziotta, Eugenio Nappi, Nicola Nicassio, Giuliana Panzarini, Roberta Pillera and Giacomo Volpe
Instruments 2026, 10(2), 28; https://doi.org/10.3390/instruments10020028 - 13 May 2026
Viewed by 1087
Abstract
The aim of this work is to develop high-precision time-of-flight (TOF) devices based on high-refractive-index solid Cherenkov radiators read out by silicon photomultipliers (SiPMs). Cherenkov light is prompt and, therefore, ideal for reaching the intrinsic timing limits of TOF systems. By utilizing a [...] Read more.
The aim of this work is to develop high-precision time-of-flight (TOF) devices based on high-refractive-index solid Cherenkov radiators read out by silicon photomultipliers (SiPMs). Cherenkov light is prompt and, therefore, ideal for reaching the intrinsic timing limits of TOF systems. By utilizing a thin, high-refractive-index radiator, a nearly instantaneous signal is generated by particles exceeding the Cherenkov threshold. In order to achieve the ultimate time resolution, we carried out a rigorous optimization of the radiator material and geometry, alongside the efficiency of the optical coupling to the SiPM sensors. The key factors limiting the time resolution were characterized by comprehensive Monte Carlo simulations, subsequently validated against experimental beam test data. We assembled small-scale prototypes instrumented with various Hamamatsu SiPM array sensors with active areas ranging from 1.3 to 3 mm, coupled with various window materials, such as fused silica and MgF2, featuring various thickness values. The prototypes were successfully tested in beam test campaigns at the CERN-PS T10 beamline. The data were collected with a complete chain of front-end and readout electronics based on either the Petiroc 2A or the Radioroc 2 interfaced to a picoTDC to measure charges and times. By comparing the time measurements from two SiPM arrays, we were able to measure a time resolution better than 33.2 ps at the full system level, with a charged-particle detection efficiency of 100%. Our results demonstrate the expected performance benchmarks for the charged-particle detection efficiency and time resolution, and they highlight the potential of the developed Cherenkov-based TOF detectors for next-generation particle identification systems. Full article
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22 pages, 3318 KB  
Article
High-Performance SiPM Detection Module for Ultra-Fast Time-Resolved Measurements
by Gennaro Fratta, Piergiorgio Daniele, Ivan Labanca, Michele Penna, Giulia Acconcia, Alberto Gola and Ivan Rech
Sensors 2026, 26(10), 3072; https://doi.org/10.3390/s26103072 - 13 May 2026
Cited by 1 | Viewed by 872
Abstract
Today, the rapid progress in non-invasive light–matter interaction analysis is transforming the landscape of biomedical and life sciences driven by low-intensity light detection technologies. As the complexity of photonic applications continues to grow, the importance of single-photon detection techniques becomes pivotal. Among them, [...] Read more.
Today, the rapid progress in non-invasive light–matter interaction analysis is transforming the landscape of biomedical and life sciences driven by low-intensity light detection technologies. As the complexity of photonic applications continues to grow, the importance of single-photon detection techniques becomes pivotal. Among them, Time-Correlated Single-Photon Counting (TCSPC) has become the gold standard for precise, time-resolved reconstruction of rapid and faint optical signals. However, TCSPC has long been constrained by pile-up distortion, which worsens with increasing acquisition speed, typically limiting it to 5% of the excitation frequency. To overcome the operational constraints of conventional implementations, a novel TCSPC acquisition methodology has been introduced, independent of photodetector dead time, excitation intensity, and prior optical signal knowledge, still enabling distortion-free reconstruction of the measured light profiles. In this context, the development of single-photon detectors with short dead time and low timing jitter becomes crucial. This work presents a single-photon detection module based on a Silicon Photomultiplier, which delivers 750 ps FWHM output pulses with a 33.5 ps RMS IRF. Its performance is showcased through fluorescence measurements employing the constraint-free TCSPC methodology, achieving a photon count rate up to 166% of the excitation frequency with a minimal lifetime estimation error of just −1.46%. Full article
(This article belongs to the Special Issue Recent Advances in Silicon Photonic Sensors)
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17 pages, 16277 KB  
Article
Characterization and Performance Assessment of a SiPM-Based Muon Detector
by Luigi Cimmino, Fabio Ambrosino, Antonio Anastasio, Carla Aramo, Vincenzo Bottiglieri, David Iacopini, Vincenzo Masone, Marco Mirra, Gabor Nyitrai, Leopoldo Repola, Giulio Saracino and Vincenzo Tramontano
Instruments 2026, 10(2), 27; https://doi.org/10.3390/instruments10020027 - 5 May 2026
Viewed by 1317
Abstract
We present the upgrade and performance evaluation of a silicon photomultiplier (SiPM)-based muon detector, originally designed and developed 15 years ago for radiation tracking applications in radiographic imaging with cosmic muons. The first use of the original assembly and scientific objectives of the [...] Read more.
We present the upgrade and performance evaluation of a silicon photomultiplier (SiPM)-based muon detector, originally designed and developed 15 years ago for radiation tracking applications in radiographic imaging with cosmic muons. The first use of the original assembly and scientific objectives of the detector was in the Mu-Ray project of the Italian National Institute for Nuclear Physics (INFN) for muon radiographic imaging of volcanoes. In addition to its initial uses and after being upgraded with Hamamatsu SiPMs, the detector has been employed in a series of measurement campaigns for the detection of underground cavities. Herein we describe the mechanical recovery process and the integration of modern electronic components aimed at extending the operational capabilities of the detector, with particular attention to the adaptation of the front-end electronics to a new DAQ system. The results of the detector’s characterization and calibration under controlled conditions will be presented, evaluating its current performance and suitability for muography applications in a new geophysical setting. The results confirm that, despite aging, the system remains a viable instrument for precision and reliable muon tracking. Full article
(This article belongs to the Section Particle Detectors and Accelerators)
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15 pages, 1734 KB  
Article
Systematic Characterisation and Non-Linear Response Correction of SiPMs Using the Single-Step Method for High-Precision Calorimetry
by Lukas Brinkmann, Massimiliano Antonello, Erika Garutti and Joern Schwandt
Instruments 2026, 10(2), 24; https://doi.org/10.3390/instruments10020024 - 24 Apr 2026
Viewed by 735
Abstract
Silicon photomultipliers (SiPMs) are vital for calorimetric applications in high-energy physics and medical imaging due to their high gain, compactness, and insensitivity to magnetic fields. However, their finite pixel count induces non-linear response behaviour at high photon fluxes, affecting energy resolution and systematic [...] Read more.
Silicon photomultipliers (SiPMs) are vital for calorimetric applications in high-energy physics and medical imaging due to their high gain, compactness, and insensitivity to magnetic fields. However, their finite pixel count induces non-linear response behaviour at high photon fluxes, affecting energy resolution and systematic accuracy. This work presents a comprehensive methodology to characterise SiPM response functions and derive correction curves using a single-step laser-based measurement approach. Three SiPMs with varying pixel sizes (15, 25 and 50 µm) are studied under controlled temperature conditions, with response functions extracted across different overvoltages and integration windows. The correction method, independent of precise light source calibration, effectively linearises the response up to saturation levels exceeding 100% of the pixel count, achieving deviations of the order of 3% across a broad operational parameter space, and outperforming the traditional calibration model. The analysis demonstrates minimal dependence of the correction on temperature, overvoltage, and pixel size, indicating universal applicability. These findings enhance SiPM performance in high-energy calorimetry and offer a practical framework for improving detector linearity and dynamic range extensions in large-scale applications. Full article
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16 pages, 5489 KB  
Article
The Development of a Low-Cost Fresnel Lens UV Telescope with SiPM Array for Low-Light Atmospheric Transient Detection
by Gabriel Chiritoi and Eugeniu Mihnea Popescu
Sensors 2026, 26(7), 2149; https://doi.org/10.3390/s26072149 - 31 Mar 2026
Viewed by 495
Abstract
This work presents the development and experimental characterization of a compact ultraviolet (UV) telescope based on silicon photomultipliers (SiPMs) designed for the detection of faint atmospheric optical tracks. Such transient optical phenomena include meteors, transient luminous events (TLEs), space debris reentries, and other [...] Read more.
This work presents the development and experimental characterization of a compact ultraviolet (UV) telescope based on silicon photomultipliers (SiPMs) designed for the detection of faint atmospheric optical tracks. Such transient optical phenomena include meteors, transient luminous events (TLEs), space debris reentries, and other faint atmospheric emissions. Nuclearite-induced atmospheric emission is considered as a benchmark case for evaluating the expected signal levels of rare luminous track events. We detail the fabrication, assembly, and testing of the SiPM sensor array, comprising parallel Geiger-mode avalanche diodes with high fill factor and photon detection efficiency, alongside custom readout electronics using self-triggering ASICs, precision optical components, and a stable mechanical mount. This photon-counting telescope provides a compact and mechanically robust alternative to conventional PMT-based systems, with demonstrated capability for detecting low-light atmospheric tracks under controlled laboratory conditions. Full article
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16 pages, 21672 KB  
Article
Ultra-Fast Digital Silicon Photomultiplier with Timestamping Capability in a 110 nm CMOS Process
by Tommaso Maria Floris, Marcello Campajola, Gianmaria Collazuol, Manuel Dionísio Da Rocha Rolo, Giuliana Fiorillo, Francesco Licciulli, Mario Nicola Mazziotta, Lucio Pancheri, Lodovico Ratti, Luigi Pio Rignanese, Davide Falchieri, Romualdo Santoro, Fatemeh Shojaei and Carla Vacchi
Electronics 2026, 15(6), 1300; https://doi.org/10.3390/electronics15061300 - 20 Mar 2026
Viewed by 633
Abstract
A monolithic digital Silicon Photomultiplier (SiPM) featuring 1024 microcells with a 30-micrometer pitch and a 50% fill factor has been designed in a 110-nanometer CMOS image sensor technology. The device under consideration integrates both SPAD sensors and front-end electronics in the same substrate. [...] Read more.
A monolithic digital Silicon Photomultiplier (SiPM) featuring 1024 microcells with a 30-micrometer pitch and a 50% fill factor has been designed in a 110-nanometer CMOS image sensor technology. The device under consideration integrates both SPAD sensors and front-end electronics in the same substrate. It can count up to 1024 photons in less than 22 ns, while assigning timestamps to the first and last detected photons with a time resolution of less than 100 ps. A parallel counter structure combined with a fast adder tree provides photon counting in digital form with low latency, whereas a carefully balanced fast NAND tree ensures a fixed-pattern time uncertainty not exceeding 26 ps. The architecture incorporates in-pixel memory for individual cell disabling and configurable thresholding on the timing signal for noise mitigation. In order to optimize the fill factor, a part of the electronics is placed outside the array, while the most sensitive elements of the timing and counting circuits are laid out close to the sensor, in the SPAD array. A serial readout is employed to provide a single output connection per SiPM, thereby simplifying system integration. Full article
(This article belongs to the Section Microelectronics)
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11 pages, 1747 KB  
Communication
A New Mathematical Framework for CMOS Si Photomultiplier Detection Rates in Quantum Cryptography
by Tal Gofman and Yael Nemirovsky
Sensors 2026, 26(4), 1386; https://doi.org/10.3390/s26041386 - 22 Feb 2026
Viewed by 683
Abstract
The deployment of Discrete Variable Quantum Key Distribution (DV-QKD) in high-traffic, short-reach environments, such as intra-data center networks, is currently constrained by the saturation of single-photon detectors. While CMOS Single-Photon Avalanche Diodes (SPADs) offer a cost-effective solution, their Secure Key Rate (SKR) is [...] Read more.
The deployment of Discrete Variable Quantum Key Distribution (DV-QKD) in high-traffic, short-reach environments, such as intra-data center networks, is currently constrained by the saturation of single-photon detectors. While CMOS Single-Photon Avalanche Diodes (SPADs) offer a cost-effective solution, their Secure Key Rate (SKR) is limited by detector dead time. To the best of the authors’ knowledge, this work is the first to derive a generalized detection rate model for SiPMs that addresses the dead-time bottlenecks of gigahertz-rate quantum cryptography. While methods for managing deadtime via active optical switching have been proposed, our model quantifies the benefits of passive spatial multiplexing inherent in standard SiPM arrays. Furthermore, contrasting with models designed to optimize energy resolution or characterize nonlinear charge response to light pulses, our work focuses on maximizing the detection count rate. We derive exact detection rate models for both analog (paralyzable) and digital (non-paralyzable) SiPM architectures, incorporating correlated noise sources such as optical crosstalk and afterpulsing. Simulation results indicate that SiPMs can increase detection rates by over an order of magnitude compared to single SPADs. Full article
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