Rectenna is the key component in radio-frequency circuits for receiving and converting electromagnetic waves into direct current. However, it is very challenging for the conventional semiconductor diode switches to rectify high-frequency signals for...
Field-effect transistor (FET) biosensors can be used to measure the charge information carried by biomolecules. However, insurmountable hysteresis in the long-term and large-range transfer characteristic curve exists and affects the measurements. Noi...
The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during the development of highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons and low...
The supply of energy with the correct parameters to electrical appliances is possible with the use of energy converters. When a direct current is required, rectifier bridges are needed. These can be made using rectifier diodes. The problem of excessi...
Power rectifiers from electrical traction systems, but not only, can be irreversibly damaged if the temperature of the semiconductor junction reaches high values to determine thermal runaway and melting. The paper proposes a mathematical model to cal...
The rapid growth of wireless technology has improved the network’s technology from 4G to 5G, with sub-6 GHz being the centre of attention as the primary communication spectrum band. To effectively benefit this exclusive network, the improvement...
This paper presents an analysis on the effect of a parasitic capacitance full-bridge class-D current source rectifier (FB-CDCSR) on a high step-up push–pull multiresonant converter (HSPPMRC). The proposed converter can provide high voltage for a 12 V...
A nonlinear state-space model for Schottky diode rectifiers is presented that incorporates junction dynamics, layout parasitic effects, and electromagnetic coupling effects. Unlike prior approaches, the model resolves conduction intervals under harmo...
Flow separation is easily induced at the junctions of aircraft components, and for aircraft with T-type tails, in particular, it can lead to loss of directional stability under a small sideslip angle. In the reported study, improved delayed detached...
The construction of multifunctional, single-molecule nanocircuits to achieve the miniaturization of active electronic devices is a challenging goal in molecular electronics. In this paper, we present an effective strategy for enhancing the multifunct...
Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting. This paper describes the mathematical model to calculate the power losses in power semiconducto...
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulati...
Polyelectrolyte hydrogel ionic diodes (PHIDs) have recently emerged as a unique set of iontronic devices. Such diodes are built on microfluidic chips that feature polyelectrolyte hydrogel junctions and rectify ionic currents owing to the heterogeneou...
The inductor–inductor–capacitor (LLC) resonant converter is a suitable topology for wide output voltage and load range applications with limited circuit parameters. One of the most significant design boundaries of an LLC resonant converte...
This work develops a novel compact Silicon-Controlled Rectifier (SCR) model incorporating self-heating effects, extending the conventional Ebers–Moll (E–M) framework for Bipolar Junction Transistors (BJTs) by comprehensively integrating p...
Although repolarization has been suggested to propagate in cardiac tissue both theoretically and experimentally, it has been challenging to estimate how and to what extent the propagation of repolarization contributes to relaxation because repolariza...
Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materi...
In Cu2ZnSnS4 (CZTS) solar cells, it is crucial to suppress the generation of and remove the SnS2 secondary phase to improve the solar cell characteristics, as the SnS2 secondary phase affects the barrier for carrier collection and diode characteristi...
This paper presents a variable-gain low-noise amplifier (VGLNA) based on an adaptive bias (ADB) circuit for the radar receiver front end. The ADB circuit processes the signal separated by a coupler at the LNA output port. First, the ADB circuit recti...
A graphene/silicon junction with rectifying behaviour and remarkable photo-response was fabricated by transferring a graphene monolayer on a pillar-patterned Si substrate. The device forms a 0.11 eV Schottky barrier with 2.6 ideality factor at room t...
Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-deposited p-type NiO forming a p–n junction with thick (10 µm) Ga2O3 drift layers grown by halide vapor phase epitaxy (HVPE) on (001) Sn-doped (1019 cm−3) β...
In the previous papers, the idea of “hidden oscillations” has been applied to explain work generation in semiconductor photovoltaic cells and thermoelectric generators. The aim of this paper is firstly to extend this approach to fuel cells and, secon...
Asymmetrically shaped nanopores have been shown to rectify the ionic current flowing through pores in a fashion similar to a p-n junction in a solid-state diode. Such asymmetric nanopores include conical pores in polymeric membranes and pyramidal por...
A novel Epitaxial Cadmium Selenide (CdSe) on Lead Selenide (PbSe) type-II heterojunction photovoltaic detector has been demonstrated by Molecular Beam Epitaxy (MBE) growth of n-type CdSe on p-type PbSe single crystalline film. The use of Reflection H...
To cope with the much narrower ESD design window in 28 nm CMOS technology, a novel diode-triggered silicon-controlled rectifier with an extra discharge path (EDP-DTSCR) for ESD protection is proposed in this paper. Compared with the traditional DTSCR...
The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) po...
Lipopolysaccharide (LPS) has been considered the primary agent to establish animal models of inflammation, immunological stress, and organ injury. Previous studies have demonstrated that LPS impaired gastrointestinal development and disrupted intesti...
A vertical Ni/β-Ga2O3 Schottky barrier diode was fabricated on an unintentionally doped bulk (−201)-oriented β-Ga2O3 single crystal and investigated with a focus on the underlying photoresponse mechanisms. The device exhibits well-def...
This study involved direct doping of In2O3 into silicon carbide (SiC) powder, resulting in 8.0 at% In-doped SiC powder. Subsequently, heating at 500 °C was performed to form a target, followed by the utilization of electron beam (e-beam) technolo...
Hydrogenated amorphous silicon (a-Si:H) is a mature thin-film technology for large-area devices and thin-film sensors, and its low-temperature growth via Plasma-Enhanced Chemical Vapor Deposition (PECVD) makes it particularly suitable for biomedical...
Gallium nitride (GaN) devices are gaining rapid adoption in electric vehicle (EV) power electronics because of their high switching speed, efficiency, and passive size reduction. The remaining gaps concern reliability across real drive cycles, integr...
The subunits KCNQ1 and KCNE1 generate the slowly activating, delayed rectifier potassium current, IKs, that responds to sympathetic stimulation and is critical for human cardiac repolarization. The A-kinase anchoring protein Yotiao facilitates macrom...
The energy band alignment of a stacked Si/GaN heterostructure was investigated using X-ray photoelectron spectroscopy (XPS) depth profiling, highlighting the influence of the amorphous interface region on the electronic properties. The crystalline Si...
A direct bidirectional current discharge path between the input/output (I/O) and ground (GND) is essential for the robust protection of charging device models (CDM) in the tightly constrained design parameters of advanced low-voltage (LV) processes....
The use of a functional molecular unit acting as a state variable provides an attractive alternative for the next generations of nanoscale electronics. It may help overcome the limits of conventional MOSFETd due to their potential scalability, low-co...
The prevalence of atrial fibrillation (AF) is bound to increase globally in the following years, affecting the quality of life of millions of people, increasing mortality and morbidity, and beleaguering health care systems. Increasingly effective the...
This review explores the performance and reliability of power semiconductor devices required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification can be implemented using (i) batteries charged with ultra-rapid DC charging...
We describe strategies to estimate the upper limits of the efficiency of photon energy harvesting via hot electron extraction from gapless absorbers. Gapless materials such as noble metals can be used for harvesting the whole solar spectrum, includin...
We propose herein a unique mechanism of generating tunable surface charges in a metal-dielectric Janus nanopore for the development of nanofluidic ion diode, wherein an uncharged metallic nanochannel is in serial connection with a dielectric nanopore...