Search Results (81)

High-power laser diodes are extensively utilized in advanced optoelectronic systems. These devices typically operate under high-current injection conditions, under which intrinsic parasitic parameters become non-negligible and exert a substantial influence on their electro-optical response characteristics. Furthermore, when multiple single emitters are monolithically integrated into a linear array along the epitaxial-layer direction on a single substrate, additional parasitic elements are inevitably introduced. These parameters are critical for characterizing the output performance of high-power laser diodes. This paper presents the implementation of an equivalent circuit model for large-signal laser-diode operation within the Advanced Design System (ADS) computer-aided environment. The proposed model enables accurate simulation of the device’s operating-voltage waveform and optical-output-power response under both DC steady-state and pulsed-transient driving conditions, thereby achieving a coupled representation of electrical behavior and optical emission. Sensitivity analysis of various parasitic elements is performed to systematically evaluate their influence on output characteristics and device reliability. The results provide theoretical guidance for structural optimization and packaging design, offering new insights into future modeling and reliability assessment of high-power laser diodes. Full article

Pulsed laser-induced phase change in silicon underpins applications from photonic device trimming to stealth dicing, yet predictive models that capture the non-equilibrium kinetics governing the competition between epitaxial recrystallization and amorphization remain limited. In this work, we developed a two-dimensional axisymmetric numerical model at the continuum level for picosecond laser-induced melting, resolidification, and amorphization of crystalline silicon at 532 nm laser wavelength, coupling transient heat conduction with Wilson–Frenkel interface kinetics and Lagrangian marker-based interface tracking. The model predicts a bounded amorphization window defined by lower and upper fluence thresholds, within which the central amorphous thickness exhibits a bell-shaped fluence dependence. Under a Gaussian beam, this window governs a morphological transition from a central amorphous spot to an amorphous ring. The predicted amorphization threshold of ≈0.22 J/cm² agrees with published experimental data for 20 ps, 532 nm irradiation. Parametric studies reveal that reducing the spot diameter or substrate temperature shifts or eliminates the upper threshold, transforming the bounded window into a monotonically increasing function, while increasing the pulse duration narrows the window symmetrically until collapse. These results provide quantitative guidelines for selecting irradiation parameters to control phase change in silicon photonic and laser processing applications. Full article

Oxygen stoichiometry critically governs the phase stability and physical properties of transition-metal oxides, yet a unified understanding of how oxygen-stoichiometry-driven phase reconstruction underlies the cooperative evolution of multiple physical properties in SrCoO_x remains lacking. Here, high-quality epitaxial brown millerite SrCoO_2.5 and perovskite SrCoO_3−δ thin films were grown by pulsed laser deposition under controlled oxygen conditions. Their structural, magnetic, electrical, optical, and photocatalytic properties were systematically compared. SrCoO_2.5 exhibits antiferromagnetic insulating behavior, infrared-dominant transmittance, and higher photocatalytic activity, whereas SrCoO_3−δ shows ferromagnetism, much lower resistivity, and strong optical opacity. First-principles calculations reveal that oxygen-stoichiometry-driven phase reconstruction strongly modifies the electronic structure, accounting for the distinct magnetic, transport, and optical responses. These results establish a direct correlation between oxygen stoichiometry, structural transformation, and multifunctional properties in SrCoO_x, highlighting oxygen-vacancy ordering as an effective route to tailoring correlated oxide functionalities. Full article

Sluggish oxygen reduction reaction (ORR) remains a critical barrier to advancing intermediate-temperature electrochemical energy devices. Here, we demonstrate that strain engineering in two platforms, epitaxial thin films and freestanding membranes, systematically tunes ORR kinetics in Ruddlesden-Popper LaSrCoO₄. In epitaxial films, film thickness is varied to control in-plane tensile strain, whereas in freestanding membranes strain relaxation during the release step using water-soluble sacrificial layers produces flat or wrinkled architectures. Electrochemical impedance spectroscopy analysis reveals more than an order of magnitude increase in the oxygen surface exchange coefficient for tensile-strained films relative to relaxed films, together with a larger oxygen vacancy concentration. Wrinkled freestanding membranes provide a further increase in oxygen surface exchange kinetics and a lower activation energy, which are attributed to increased active surface area and local strain variation. These results identify epitaxial tensile strain and controlled wrinkling as practical design parameters for optimizing ORR activity in Ruddlesden-Popper oxides. Full article

A deterministic platform for engineering epitaxial strain in CaMnO_3-δ (CMO) thermoelectric thin films is demonstrated using pulsed laser deposition, enabling precise control of the interplay between strain state and oxygen vacancy formation. High-quality epitaxial CMO films are grown on four different single crystalline substrates, which impose fully relaxed, partially relaxed, low tensile, and high tensile strain states, respectively. Increasing tensile strain induces a monotonic expansion of the unit cell volume and a systematic rise in oxygen vacancy concentration. Oxygen vacancies increase carrier concentration but decrease mobility due to enhanced scattering. Reducing tensile strain suppresses scattering of electrons by oxygen vacancies and increases both electrical conductivity (σ) and the Seebeck coefficient (S), mitigating the conventional inverse relationship between S and σ. Fully relaxed films exhibit σ approximately four orders of magnitude higher at room temperature than highly tensile strained films. These relaxed films also show the highest power factor (PF = S²·σ), exceeding strained films by up to six orders of magnitude. Strain-controlled oxygen vacancies thus provide a direct route to optimize charge transport and maximize the thermoelectric performance of CMO thin films. Full article

By employing graded-interfaces modeling, ~10 μm-emitting quantum cascade lasers (QCLs) are designed with previously found conditions for record-high wall-plug efficiency (WPE) operation of mid-infrared QCLs: direct resonant-tunneling injection from a prior-stage low-energy state into the upper-laser level, photon-induced carrier transport, and carrier-leakage suppression via the step-taper active-region (STA) approach. For devices with interface-roughness (IFR) parameters characteristic of optimized molecular-beam-epitaxy (MBE) growth, a maximum front-facet pulsed WPE value of 19.6% is projected for 60-stages STA-type devices. This results from several factors: 19 mV voltage defect at threshold, 72% voltage efficiency at the maximum WPE point, and ~93% injection efficiency due to strong carrier-leakage suppression. 2.7 W peak front-facet power is projected. For devices with our metal–organic chemical vapor deposition (MOCVD)-growth IFR parameters, the projected maximum pulsed WPE value is 17.1%, i.e., 1.7 times higher than the highest reported front-facet WPE value from ~10 μm-emitting MOCVD-grown QCLs. Studies regarding the WPE value variation with the stage number, while employing waveguide designs having the same empty cavity loss, reveal that the maximum WPE value remains almost the same for 50–60 stages devices. In turn, there is potential for obtaining significantly higher CW powers than from conventional ~10 μm-emitting QCLs. Full article

Epitaxial thick films of yttrium iron garnet (YIG) are ideal for use in microwave devices due to their low losses at high frequencies. This report is on the growth of strain-engineered YIG films by liquid-phase epitaxy (LPE) on yttrium aluminum garnet (YAG) substrates with −3% lattice mismatch with YIG. Since the use of a lattice-matched substrate is preferred for LPE growths, a seed layer of YIG, 370–400 nm in thickness, was deposited by pulsed laser deposition (PLD) on (100), (110), and (111) YAG substrates. The seed layers were stoichiometric with magnetic parameters in agreement with the parameters for bulk single-crystal YIG and with strain-induced perpendicular magnetic anisotropy field H_a = 0.19–0.43 kOe. YIG films, 4 to 8.4 μm in thickness, were grown by LPE at 870 °C on YAG substrates with the seed layers using the PbO+B₂O₃ flux and annealed in air at 1000 °C. The films were Y-rich and Fe-deficient and confirmed to be epitaxial single crystals by X-ray diffraction. The saturation magnetization 4πM_s at room temperature was rather high and ranged from 1.9 kG to 2.3 kG. Ferromagnetic resonance at 5–15 GHz showed the absence of significant magneto-crystalline anisotropy in the LPE films with the line-width ΔH in the range 85–160 Oe, and H_a = 0.27–0.80 kOe which is much higher than for the seed layers. The high magnetization and H_a-values for the LPE films could be partially attributed to the off-stoichiometry. Although the strain due to the film–substrate lattice mismatch contributes to H_a, the mismatch in the thermal expansion coefficients for YIG and YAG is also a likely cause of H_a due to the high growth and annealing temperatures. The LPE-grown YIG films with high strain-induced anisotropy fields have the potential for use in self-biased microwave devices. Full article

Rare-earth barium copper oxide (REBCO) high-temperature superconductors, owing to their ability to maintain high critical current density (J_c) under liquid-nitrogen-temperature and high-magnetic-field conditions, are widely regarded as one of the most promising material systems among all superconductors. This review systematically summarizes fabrication strategies for REBCO coated conductors, with a focus on pulsed laser deposition (PLD) for achieving high-quality epitaxial growth with precise composition control. To enhance in-field performance, strategies for introducing artificial pinning centers (APCs) are examined, including rare-earth element doping, substrate surface decoration, and nanoscale secondary phase incorporation. The mechanisms of vortex pinning from different dimensional defects and their synergistic effects are compared. Finally, we suggest potential future directions aimed at further enhancing the superconducting properties. Full article

Magnetic shape memory alloys have attracted considerable attention due to their multifunctional properties. Among these materials, Ni-Mn-Ga alloys are distinguished by their ability to achieve up to 10% strain when exposed to a magnetic field, a characteristic predominantly observed in single-crystal samples. Consequently, it is essential to develop nanomaterials with a crystal structure closely resembling that of a single crystal. In this study, an epitaxial Ni-Mn-Ga thin film was fabricated using Pulsed Laser Deposition on an Al₂O₃ $\left(11\overline{2}0\right)$ single-crystal substrate. The crystal structure was characterised through X-ray diffraction methodologies, such as symmetrical $2\theta -\omega$ scans, pole figures, and reciprocal space maps. The results indicated that the sample was mainly in a slightly distorted cubic austenite phase, and some incipient martensite phase also appeared. A detailed microstructural analysis, performed by transmission electron microscopy, confirmed that certain regions of the sample exhibited an incipient transformation to the martensite phase. Regions closer to the substrate retained the austenite phase, suggesting that the constraint imposed by the substrate inhibits the phase transition. These results indicate that it is possible to grow high crystalline quality thin films of Ni-Mn-Ga by Pulsed Laser Deposition. Full article

4H-SiC (silicon carbide), known as the third-generation semiconductor, has been widely used in high-power electronic devices. However, surface defects on wafers can seriously affect the key parameters and stability of silicon carbide devices. In this work, we pioneered a dual-laser comparative framework to systematically investigate the effects of continuous wave (CW) and femtosecond (FS) pulse laser micromachining on 4H-SiC epitaxial layers. CW laser restructuring optimized lattice integrity at sub-melting thresholds, while ultrafast FS pulse laser achieved submicron roughness control (from 8 μm to <0.5 μm) without obvious thermal collateral damage. To reveal the dynamic mechanism during the laser modification, multi-physics finite element models were adopted that decouple thermal and non-thermal mechanisms. This work expands the feasibility of laser micromachining for next-generation SiC device manufacturing. Full article

LiNbO₃ plays a significant role in modern integrated photonics because of its unique properties. One of the challenges in modern integrated photonics is reducing chip production cost. Today, the most widespread yet expensive method to fabricate thin films of LiNbO₃ is the smart cut method. The high production cost of smart-cut chips is caused by the use of expensive equipment for helium implantation. A prospective method to reduce the cost of photonic integrated circuits is to use sputtered thin films of lithium niobite, since sputtering technology does not require helium implantation equipment. The purpose of this review is to assess the feasibility of applying sputtered LiNbO₃ thin films in integrated photonics. This work compares sputtered LiNbO₃ thin films and those fabricated by widespread methods, including the smart cut method, liquid-phase epitaxy, chemical vapor deposition, pulsed laser deposition, and molecular-beam epitaxy. Full article

BiFeO₃/LaFeO₃ (BFO/LFO) epitaxial superlattices (SLs) with different bilayer thicknesses were grown via pulsed laser deposition on a (001)-SrTiO₃ substrate buffered with a SrRuO₃ bottom electrode. Room-temperature X-ray diffraction demonstrated strong structural changes in tuning the bilayer thickness while keeping the total thickness constant. Superlattices with thin periods were characterized by an antiferroelectric Pnma-like phase, while thick bilayers of the SLs were more likely to be described by a mixed state, including a rhombohedral ferroelectric bulk-like phase. Raman scattering analysis further confirmed the structural behaviour deduced by X-ray diffraction. Strain relaxation and symmetry changes were moreover accompanied by modifications in the dielectric properties correlated with the deduced (anti)ferroic structural phases. Full article

PrNiO₃ and Pr_0.8Sr_0.2NiO₃ epitaxial thin films were deposited by pulsed laser deposition (PLD) on different substrates and studied for Hall effect and resistivity behavior. Conductive behavior is observed in the doped composition, and a normal Hall effect allows to determine charge carrier’s density and mobility. The doped compositions show a high concentration of charge carriers (≈10²³ cm⁻³ at 300 K), and it appears that they can be controlled by the strains. Sr doping enhances the transport properties, leading to a transition from semiconducting to metallic behavior. The impact of the reduction process on charge carrier concentration and mobility is also studied. Full article

Lithium niobate (LiNbO₃) has remarkable ferroelectric properties, and its unique crystal structure allows it to undergo significant spontaneous polarization. Lithium niobate plays an important role in the fields of electro-optic modulation, sensing and acoustics due to its excellent electro-optic and piezoelectric properties. Thin-film LiNbO₃ (TFLN) has attracted much attention due to its unique physical properties, stable properties and easy processing. This review introduces several main preparation methods for TFLN, including chemical vapor deposition (CVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), magnetron sputtering and Smartcut technology. The development of TFLN devices, especially the recent research on sensors, memories, optical waveguides and EO modulators, is introduced. With the continuous advancement of manufacturing technology and integration technology, TFLN devices are expected to occupy a more important position in future photonic integrated circuits. Full article

Epitaxial layers of water-soluble Sr₃Al₂O₆ were fabricated as sacrificial layers on SrTiO₃ (100) single-crystal substrates using the Pulsed Laser Deposition technique. This approach envisages the possibility of developing a new generation of micro-Solid Oxide Fuel Cells and micro-Solid Oxide Electrochemical Cells for portable energy conversion and storage devices. The sacrificial layer technique offers a pathway to engineering free-standing membranes of electrolytes, cathodes, and anodes with total thicknesses on the order of a few nanometers. Furthermore, the ability to etch the SAO sacrificial layer and transfer ultra-thin oxide films from single-crystal substrates to silicon-based circuits opens possibilities for creating a novel class of mixed electronic and ionic devices with unexplored potential. In this work, we report the growth mechanism and structural characterization of the SAO sacrificial layer. Epitaxial samarium-doped ceria films, grown on SrTiO3 substrates using Sr₃Al₂O₆ as a buffer layer, were successfully transferred onto silicon wafers. This demonstration highlights the potential of the sacrificial layer method for integrating high-quality oxide thin films into advanced device architectures, bridging the gap between oxide materials and silicon-based technologies. Full article