Search Results (233)

In recent years, significant attention has been directed toward the development of coating materials capable of tailoring surface properties for various functional applications. Transition metal nitrides, in particular, have garnered interest due to their superior physical and chemical properties, including high hardness, excellent wear resistance, and strong corrosion resistance. In this study, a fabrication process for CrN-based thin films was developed by combining reactive direct current magnetron sputtering (dcMS) with post-deposition annealing in air. CrN coatings were deposited by reactive dcMS using different argon-nitrogen (Ar:N₂) gas ratios (4:1, 3:1, 2:1, and 1:1), followed by annealing at 550 °C for 1.5 h in ambient air. XRD and EDS analysis revealed that this treatment results in the formation of a composite phase comprising CrN and Cr₂O₃. The resulting coating exhibited favorable mechanical and tribological properties, including a maximum hardness of 12 GPa, a low wear coefficient of 0.254 and a specific wear rate of 7.05 × 10⁻⁶ mm³/N·m, making it a strong candidate for advanced protective coating applications. Full article

Laser annealing of oxide functional thin films makes them compatible with substrates of various types, especially flexible materials. The effects of optical annealing on Ni-doped ZnO thin films were the subject of investigation and analysis in this study. Using pulsed laser deposition, we deposited polycrystalline ZnNiO films on sapphire and silicon substrates. The deposited film was annealed by laser heating. A continuous CO₂ laser was used for this purpose. The uniformly distributed long-wavelength radiation of the CO₂ laser can penetrate deeper from the surface of the thin film compared to short-wavelength lasers such as UV and IR lasers. After growth, optical post-annealing processes were applied to improve the conductive properties of the films. The crystallinity and surface morphology of the grown films and annealed films were analyzed using SEM, and their electrical parameters were evaluated using van der Pauw effect measurements. We used electrical conductivity measurements and investigated the photovoltaic properties of the ZnNiO film. After CO₂ laser annealing, changes in both the crystalline structure and surface appearance of ZnO were evident. Subsequent to laser annealing, the crystallinity of ZnO showed both change and degradation. High-power CO₂ laser annealing changed the structure to a mixed grain size. Surface nanostructuring occurred. This was confirmed by SEM morphological studies. After irradiation, the electrical conductivity of the films increased from 0.06 Sm/cm to 0.31 Sm/cm. The lifetime of non-equilibrium charge carriers decreased from 2.0·10⁻⁹ s to 1.2·10⁻⁹ s. Full article

100 nm thick TiO₂/TiN bilayers with varying thickness ratios were deposited via reactive sputtering of a Ti target in controlled oxygen and nitrogen atmospheres. Post-deposition annealing in air at 600 °C was performed to induce nitrogen diffusion through the oxygen-deficient TiO₂ layer. The resulting changes in morphology and chemical environment were investigated in detail using transmission electron microscopy (TEM), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and UV-Vis spectroscopy. Detailed TEM and XPS analyses have confirmed nitrogen diffusion across the TiO₂ layer, with surface nitrogen concentration and the ratio of interstitial to substitutional nitrogen dependent on the TiO₂/TiN mass ratio. Optical studies demonstrated modifications in optical constants and a reduction of the effective bandgap from 3.2 eV to 2.6 eV due to new energy states introduced by nitrogen doping. Changes in surface free energy induced by nitrogen incorporation showed a correlation to nitrogen doping sites on the surface, which had positive effects on overall photocatalytic activity. Photocatalytic activity, assessed through methylene blue degradation, showed enhancement attributed to nitrogen doping. Additionally, deposition of a 5 nm gold layer on the annealed sample enabled investigation of synergistic effects between nitrogen doping and gold incorporation, resulting in further improved photocatalytic performance. These findings establish the TiO₂/TiN bilayer as a versatile platform for supporting thin gold films with enhanced photocatalytic properties. Full article

With the rapid advancement of high-precision optical systems, increasingly stringent demands are imposed on the surface figure accuracy of optical components. The magnitude of residual stress in multilayer films directly influences the post-coating surface figure stability of these components, making the control of multilayer film stress a critical factor in enhancing optical surface figure accuracy. In this study, which addresses the process constraints and substrate damage risks associated with conventional annealing-based stress compensation for large-aperture optical components, we introduce an active stress engineering strategy rooted in in situ deposition process optimization. By systematically tailoring film deposition parameters and adjusting the thickness modulation ratio of TiO₂ and SiO₂, we achieve dynamic compensation of residual stress in multilayer structures. This approach demonstrates broad applicability across diverse optical coatings, where it effectively mitigates stress-induced surface distortions. Unlike annealing methods, this intrinsic stress polarity manipulation strategy obviates the need for high-temperature post-processing, eliminating risks of material decomposition or substrate degradation. By enabling precise nanoscale stress regulation in large-aperture films through controlled process parameters, it provides essential technical support for manufacturing ultra-precision optical devices, such as next-generation laser systems and space-based stress wave detection instruments, where minimal stress-induced deformation is paramount to functional performance. Full article

The titanium matrix composites (TMCs) fabricated via Directed Energy Deposition (DED) effectively overcome the issue of coarse columnar grains typically observed in additively manufactured titanium alloys. In this study, systematic annealing heat treatments were applied to in situ (TiB + TiC)/Ti-6Al-4V composites to refine the microstructure and tailor mechanical properties. The results reveal that the plate-like α phase in the as-deposited composites gradually transforms into an equiaxed morphology with increasing annealing temperature and holding time. Notably, when the annealing temperature exceeds 1000 °C, significant coarsening of the TiC phase is observed, while the TiB phase remains morphologically stable. Annealing promotes decomposition of acicular martensite and stress relaxation, leading to a reduction in hardness compared to the as-deposited state. However, the reticulated distribution of the TiB and TiC reinforcement phases contributes to enhanced tensile performance. Specifically, the as-deposited composite achieves a tensile strength of 1109 MPa in the XOY direction, representing a 21.6% improvement over the as-cast counterpart, while maintaining a ductility of 2.47%. These findings demonstrate that post-deposition annealing is an effective strategy to regulate microstructure and achieve a desirable balance between strength and ductility in DED-fabricated titanium matrix composites. Full article

Additive Manufacturing (AM) techniques, such as Fused Deposition Modeling (FDM) and Stereolithography (SLA), are increasingly adopted in various high-demand sectors, including the aerospace, biomedical engineering, and automotive industries, due to their design flexibility and material adaptability. However, the tribological performance and surface integrity of parts manufactured by AM are the biggest functional deployment challenges, especially in wear susceptibility or load-carrying applications. The current review provides a comprehensive overview of the tribological challenges and surface engineering solutions inherent in FDM and SLA processes. The overview begins with a comparative overview of material systems, process mechanics, and failure modes, highlighting prevalent wear mechanisms, such as abrasion, adhesion, fatigue, and delamination. The effect of influential factors (layer thickness, raster direction, infill density, resin curing) on wear behavior and surface integrity is critically evaluated. Novel post-processing techniques, such as vapor smoothing, thermal annealing, laser polishing, and thin-film coating, are discussed for their potential to endow surface durability and reduce friction coefficients. Hybrid manufacturing potential, where subtractive operations (e.g., rolling, peening) are integrated with AM, is highlighted as a path to functionally graded, high-performance surfaces. Further, the review highlights the growing use of finite element modeling, digital twins, and machine learning algorithms for predictive control of tribological performance at AM parts. Through material-level innovations, process optimization, and surface treatment techniques integration, the article provides actionable guidelines for researchers and engineers aiming at performance improvement of FDM and SLA-manufactured parts. Future directions, such as smart tribological, sustainable materials, and AI-based process design, are highlighted to drive the transition of AM from prototyping to end-use applications in high-demand industries. Full article

Gallium oxide (Ga₂O₃), as a wide-bandgap semiconductor material, is highly expected to find extensive applications in optoelectronic devices, high-power electronics, gas sensors, etc. However, the photoelectric properties of Ga₂O₃ still need to be improved before its devices become commercially viable. As is well known, doping is an effective method to modulate the various properties of semiconductor materials. In this study, Zn–N co-doped Ga₂O₃ films with various doping concentrations were grown in situ on sapphire substrates by atomic layer deposition (ALD) at 250 °C, followed by post-annealing at 900 °C. The post-annealed undoped Ga₂O₃ film showed a highly preferential orientation, whereas with the increase in Zn doping concentration, the preferential orientation of Ga₂O₃ films was deteriorated, turning it into an amorphous state. The surface roughness of the Ga₂O₃ thin films is largely affected by doping. As a result of post-annealing, the bandgaps of the Ga₂O₃ films can be modulated from 4.69 eV to 5.41 eV by controlling the Zn–N co-doping concentrations. When deposited under optimum conditions, high-quality Zn–N co-doped Ga₂O₃ films showed higher transmittance, a larger bandgap, and fewer defects compared with undoped ones. Full article

The tin dioxide (SnO₂) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen–hydrogen mixed atmosphere on their surface morphology, optical behavior, and electrical performance. The SnO₂ films were characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall effect measurements. With increasing annealing temperatures, the SnO₂ films exhibited enhanced crystallinity, a higher oxygen vacancy (O_V) peak area ratio, and improved mobility and carrier concentration. These enhancements make the annealed SnO₂ films highly suitable as electron transport layers (ETLs) in perovskite solar cells (PSCs), providing practical guidance for the design of high-performance PSCs. Full article

Transition metal dichalcogenides, especially molybdenum disulfide (MoS₂), exhibit exceptional properties that make them suitable for a wide range of applications. However, the interaction between MoS₂ and technologically relevant substrates, such as platinum (Pt) electrodes, can significantly influence its properties. This study investigates the growth and properties of MoS₂ thin films on Pt substrates using ionized jet deposition, a versatile, low-cost vacuum deposition technique. We explore the effects of the roughness of Pt substrates and self-heating during deposition on the chemical composition, structure, and strain of MoS₂ films. By optimizing the deposition system to achieve crystalline MoS₂ at room temperature, we compare as-deposited and annealed films. The results reveal that as-deposited MoS₂ films are initially amorphous and conform to the Pt substrate roughness, but crystalline growth is reached when the sample holder is sufficiently heated by the plasma. Further post-annealing at 270 °C enhances crystallinity and reduces sulfur-related defects. We also identify a change in the MoS₂–Pt interface properties, with a reduction in Pt–S interactions after annealing. Our findings contribute to the understanding of MoS₂ growth on Pt and provide insights for optimizing MoS₂-based devices in catalysis and electronics. Full article

We report the photocatalytic (PC) response of titanium oxide (TiO_x) films grown by reactive DC magnetron sputtering under oblique-angle-deposition (OAD) and subjected to post-deposition flash-lamp-annealing (FLA). Under ballistic growth conditions, OAD yields TiO_x films with either compact or inclined columnar structure as the deposition incidence angle (α) with respect to the substrate normal varies from zero to grazing. On the one hand, films produced for α ≤ 45° display a compact and opaque structure comprising the formation of nanocrystalline cubic titanium monoxide (c-TiO) phase. On the other hand, films grown at larger α (≥60°) display tilted columns with amorphous structure, yielding highly porous films and an increased transparency for α > 75°. For TiO_x films grown at large α, FLA induces phase transformation to nanocrystalline anatase from the amorphous state. In contrast to as-grown samples, FLA samples display PC activity as assessed by bleaching of methyl orange dye. The best PC performance is attained for an intermediate situation (α = 60–75°) between compact and columnar structures. The obtained photoactivity is discussed in terms of the different microstructures obtained by OAD and posterior phase formation upon FLA. Full article

This paper investigates the relationship between the physical properties of NbN thin films and a series of different substrates/buffer layers used for the thin film growth. Substrates, including 4H-SiC, AlN/Si, AlN/sapphire, and annealed AlN/sapphire, were selected for NbN film deposition via DC magnetron sputtering. Post-deposition annealing was also employed to study its impact on the films’ quality. Comprehensive characterizations were performed on NbN films, focusing on superconducting critical temperature (T_C), transition width (ΔT_C), crystalline quality, and surface roughness. The results demonstrate that the annealed NbN films grown on 4H-SiC substrates with the highest crystalline quality exhibit optimal crystalline quality, achieving a T_C of 16.3 K. Experimental results reveal intrinsic correlations between the critical properties of NbN superconducting thin films and substrate structural characteristics; the impact of post-growth annealing on the T_C is also studied. Full article

Vanadium and oxygen form a complex system of vanadium oxides with multiple phases and mixed valency, increasing the difficulty of characterization. In this work, amorphous vanadium oxide thin films with mixed valence states were fabricated by atomic layer deposition, and then post-annealing was conducted for crystalline films. For the surface analysis of this mixed-valence system, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were employed. However, XPS is only able to quasi-quantitatively determine the surface-proximity oxidation states. To account for the inadequacy of surface-sensitive XPS and AES techniques, a surface oxidation model (SOM) was proposed for the ellipsometric modeling of the mixed-valence system. Furthermore, by conducting air thermal oxidation (ATO) experiments, the four sets of fitting parameters of SOM were decreased to three, lowering the system complexity. This study is expected to help with the analysis of vanadium oxide mixed-valence systems and other multivalent metal oxide systems. Full article

The study explores the optical and transport properties of polycrystalline ZnO thin films prepared using reactive pulsed mid-frequency sputtering with RF electron cyclotron wave resonance (ECWR) plasma. This deposition method increases the ionization degree of sputtered particles, the dissociation of reactive gas and the plasma density of pulsed reactive magnetron plasma. Optical absorption spectra reveal a sharp Urbach edge, indicating low valence band disorder. Lattice disorder and deep defect concentration are more likely to occur in samples with higher roughness. PL analysis at low temperature reveals in all samples a relatively slow (μs) red emission band related to deep bulk defects. The fast (sub-ns), surface-related blue PL band was observed in some samples. Blue PL disappeared after annealing in air at 500 °C. Room temperature Hall effect measurements confirm n-type conductivity, though with relatively low mobility, suggesting defect-related scattering. Persistent photoconductivity was observed under UV illumination, indicating deep trap states affecting charge transport. These results highlight the impact of deposition and post-treatment on polycrystalline ZnO thin films, offering insights into optimizing their performance for optoelectronic applications, such as UV detectors and transparent conductive oxides. Full article

WO₃ electrochromic films have emerged as potential candidates for smart windows due to their cost-effectiveness, fast switching speed, and strong chemical stability. However, the inherent contradiction between the high coloring efficiency of amorphous WO₃ and the cycling durability of crystalline WO₃ remains a critical challenge in practical applications. This study proposes an innovative heterostructure engineering strategy, achieving precise control of the amorphous/crystalline bilayer WO₃ heterointerface (148 nm a-WO₃/115 nm c-WO₃) for the first time through phase boundary regulation, using well-controlled magnetron sputtering and post-deposition thermal annealing processes. Multimodal characterization using XRD, XPS, and SEM indicates that the heterointerface optimizes performance through a dynamic charge transfer mechanism and structural synergistic effects: the optimized bilayer structure achieves 76.57% optical modulation (at 630 nm) under −1.0 V and maintains a ΔT retention rate of 45.02% after 600 cycles, significantly outperforming single amorphous (8.34%) and crystalline films (14.34%). XPS analysis reveals a dynamic equilibrium mechanism involving W⁵⁺/Li⁺ at the interface, and the Li⁺ diffusion coefficient (D₀ = 4.29 × 10⁻¹⁰ cm²/s) confirms that the amorphous layer dominates rapid ion transport, while the crystalline matrix enhances structural stability through its ordered crystalline structure. This study offers a new paradigm for balancing the efficiency and longevity of electrochromic devices, with the compatibility of magnetic sputtering promoting the industrialization process of large-area smart windows. Full article

In this work, micro Zn-doped Ga₂O₃ films (GZO) were deposited by one-step mixed atomic layer deposition (ALD) followed by post-thermal engineering. The effects of Zn doping and post-annealing temperature on both structure characteristics and electric properties were investigated in detail. The combination of plasma-enhanced ALD of Ga₂O₃ and thermal ALD of ZnO can realize the fast growth rate (0.62 nm/supercyc.), high density (4.9 g/cm³), and smooth interface (average R_q = 0.51 nm) of Zn-doped Ga₂O₃ film. In addition, the thermal engineering of the GZO was achieved by setting the annealing temperature to 400, 600, 800, and 1000 °C, respectively. The GZO film annealed at 800 °C exhibits a typical crystalline structure (Ga₂O₃: β phase, ZnO: hexagonal wurtzite), a lower roughness (average R_q = 2.7 nm), and a higher average breakdown field (16.47 MV/cm). Notably, compared with the pure GZO film, the breakdown field annealed at 800 °C increases by 180%. The O_V content in the GZO after annealing at 800 °C is as low as 34.8%, resulting in a remarkable enhancement of electrical properties. These research findings offer a new perspective on the high-quality ALD-doped materials and application of GZO in high-power electronics and high-sensitive devices. Full article