- Feature Paper
- Review
Progress in Polycrystalline SiC Growth by Low Pressure Chemical Vapor Deposition and Material Characterization
- Michail Gavalas,
- Yann Gallou,
- Didier Chaussende,
- Elisabeth Blanquet,
- Frédéric Mercier and
- Konstantinos Zekentes
The purpose of this paper is to give a review on the state of the art of polycrystalline SiC material grown by low-pressure chemical vapor deposition (LPCVD). Nowadays, LPCVD is the main technique used for the deposition of polycrystalline SiC, both...