Sign in to use this feature.

Years

Between: -

Subjects

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline

Journals

Article Types

Countries / Regions

Search Results (50)

Search Parameters:
Keywords = plasma-enhanced atomic layer deposition (PEALD)

Order results
Result details
Results per page
Select all
Export citation of selected articles as:
11 pages, 3115 KiB  
Article
Low Resistivity and High Carrier Concentration in SnO2 Thin Films: The Impact of Nitrogen–Hydrogen Annealing Treatments
by Qi-Zhen Chen, Zhi-Xuan Zhang, Wan-Qiang Fu, Jing-Ru Duan, Yu-Xin Yang, Chao-Nan Chen and Shui-Yang Lien
Nanomaterials 2025, 15(13), 986; https://doi.org/10.3390/nano15130986 - 25 Jun 2025
Viewed by 424
Abstract
The tin dioxide (SnO2) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen–hydrogen mixed atmosphere on their [...] Read more.
The tin dioxide (SnO2) thin films in this work were prepared by using plasma-enhanced atomic layer deposition (PEALD), and a systematic analysis was conducted to evaluate the influence of post-deposition annealing at various temperatures in a nitrogen–hydrogen mixed atmosphere on their surface morphology, optical behavior, and electrical performance. The SnO2 films were characterized by using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Hall effect measurements. With increasing annealing temperatures, the SnO2 films exhibited enhanced crystallinity, a higher oxygen vacancy (OV) peak area ratio, and improved mobility and carrier concentration. These enhancements make the annealed SnO2 films highly suitable as electron transport layers (ETLs) in perovskite solar cells (PSCs), providing practical guidance for the design of high-performance PSCs. Full article
(This article belongs to the Special Issue Thin Films for Efficient Perovskite Solar Cells)
Show Figures

Graphical abstract

12 pages, 14936 KiB  
Article
Relation Between Thickness and TFTs Properties of HfO2 Dielectric Layer Synthesized by Plasma-Enhanced Atomic Layer Deposition
by Qizhen Chen, Wanqiang Fu, Jing Han, Xiaoying Zhang and Shui-Yang Lien
Nanomaterials 2025, 15(10), 719; https://doi.org/10.3390/nano15100719 - 10 May 2025
Viewed by 645
Abstract
The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density. Amorphous indium gallium zinc oxide (a-IGZO) TFTs are promising candidates to meet these requirements. However, conventional silicon dioxide gate insulators [...] Read more.
The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density. Amorphous indium gallium zinc oxide (a-IGZO) TFTs are promising candidates to meet these requirements. However, conventional silicon dioxide gate insulators provide limited channel modulation due to their low dielectric constant, while alternative high-k dielectrics often suffer from high leakage currents and poor surface quality. Plasma-enhanced atomic layer deposition (PEALD) enables the atomic-level control of film thickness, resulting in high-quality films with superior conformality and uniformity. In this work, a systematic investigation was conducted on the properties of HfO2 films and the electrical characteristics of a-IGZO TFTs with different HfO2 thicknesses. A Vth of −0.9 V, μsat of 6.76 cm2/Vs, SS of 0.084 V/decade, and Ion/Ioff of 1.35 × 109 are obtained for IGZO TFTs with 40 nm HfO2. It is believed that the IGZO TFTs based on a HfO2 gate insulating layer and prepared by PEALD can improve electrical performance. Full article
Show Figures

Figure 1

14 pages, 18579 KiB  
Article
Inhibition of Anti-Reflection Film Cracks on Plastic Substrates Using Nanolaminate Layer Deposition in Plasma-Enhanced Atomic Layer Deposition
by Chi-Chieh Wang, Cheng-Fu Wang, Meng-Chi Li, Li-Chen Su and Chien-Cheng Kuo
Technologies 2025, 13(1), 11; https://doi.org/10.3390/technologies13010011 - 28 Dec 2024
Cited by 1 | Viewed by 1394
Abstract
In this research, we mainly increase the adhesion of PMMA substrate and film, which is reflected in the environmental test. This study used plasma-enhanced atomic layer deposition (PEALD) to find the relationship between the intensity of XRD reflection peak and the root-mean-square surface [...] Read more.
In this research, we mainly increase the adhesion of PMMA substrate and film, which is reflected in the environmental test. This study used plasma-enhanced atomic layer deposition (PEALD) to find the relationship between the intensity of XRD reflection peak and the root-mean-square surface roughness (σRMS) of hafnium dioxide (HfO2) at different thicknesses by reducing the plasma power at different process temperatures. In this experiment, HfO2 was found to have the highest intensity of XRD at its maximum thickness. According to the different intensities of XRD of HfO2 at different thicknesses, aluminum oxide (Al2O3) was inserted as crystallization cutoff layers, and the two materials were combined into nanolaminates. The corresponding σRMS value also changed from 1.25 to 0.434 nm after treatment under the fourth experimental design. This study improved this mismatch between interfaces by adjusting the yield strength and ductility using Al2O3 layers and by creating an inhibition layer. In addition, through the processing of inserted Al2O3 layers, the degree of crystallization was changed so that the material and substrate could maintain their normal surfaces without cracking after the environmental tests. After inserting five 1 nm thick Al2O3 layers, the environmental test results were improved. The test time was increased from the original 56 h to 352 h. Full article
(This article belongs to the Section Innovations in Materials Science and Materials Processing)
Show Figures

Figure 1

10 pages, 4348 KiB  
Communication
Enhanced Barrier and Optical Properties of Inorganic Nano-Multilayers on PEN Substrate Through Hybrid Deposition
by Xiaojie Sun, Lanlan Chen and Wei Feng
Materials 2024, 17(23), 6007; https://doi.org/10.3390/ma17236007 - 8 Dec 2024
Viewed by 4238
Abstract
In this study, an inorganic multilayer barrier film was fabricated on the polyethylene naphthalate (PEN) substrate, which was composed of a SiO2 layer prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and a Al2O3/ZnO nanolaminate produced by [...] Read more.
In this study, an inorganic multilayer barrier film was fabricated on the polyethylene naphthalate (PEN) substrate, which was composed of a SiO2 layer prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and a Al2O3/ZnO nanolaminate produced by plasma-enhanced atomic layer deposition (PEALD). The multilayer composite film with a structure of 50 nm SiO2 + (4.5 nm Al2O3/6 nm ZnO) × 4 has excellent optical transmittance (88.1%) and extremely low water vapor permeability (3.3 × 10−5 g/m2/day, 38 °C, 90% RH), indicating the cooperation of the two advanced film growth methods. The results suggest that the defects of the SiO2 layer prepared by ICP-CVD were effectively repaired by the PEALD layer, which has excellent defect coverage. And Al2O3/ZnO nanolaminates have advantages over single-layer Al2O3 due to their complex diffusion pathways. The multilayer barrier film offers potential for encapsulating organic electronic devices that require a longer lifespan. Full article
Show Figures

Figure 1

9 pages, 4517 KiB  
Article
Band Alignment of AlN/InGaZnO Heterojunction for Thin-Film Transistor Application
by Hongpeng Zhang, Tianli Huang, Rongjun Cao, Chen Wang, Bo Peng, Jibao Wu, Shaochong Wang, Kunwei Zheng, Renxu Jia, Yuming Zhang and Hongyi Zhang
Electronics 2024, 13(23), 4602; https://doi.org/10.3390/electronics13234602 - 22 Nov 2024
Viewed by 1038
Abstract
Uncrystallized indium-gallium-zinc-oxide (InGaZnO) thin-film transistors (TFTs) combined with an aluminum nitride (AlN) dielectric have been used to promote performance and steadiness. However, the high deposition temperature of AlN films limits their application in InGaZnO flexible TFTs. In this work, AlN layers were deposited [...] Read more.
Uncrystallized indium-gallium-zinc-oxide (InGaZnO) thin-film transistors (TFTs) combined with an aluminum nitride (AlN) dielectric have been used to promote performance and steadiness. However, the high deposition temperature of AlN films limits their application in InGaZnO flexible TFTs. In this work, AlN layers were deposited via low-temperature plasma-enhanced atomic layer deposition (PEALD), and InGaZnO films were fabricated via high-power impulse magnetron sputtering (HIPIMS). The band alignment of the AlN/InGaZnO heterojunction was studied using the X-ray photoemission spectrum and ultraviolet visible transmittance spectrum. It was found that the AlN/InGaZnO system exhibited a staggered band alignment with a valence band offset ΔEv of −1.25 ± 0.05 eV and a conduction band offset ΔEc of 4.01 ± 0.05 eV. The results imply that PEALD AlN could be more useful for surface passivation than a gate dielectric to promote InGaZnO device reliability under atmospheric exposure. Full article
(This article belongs to the Special Issue Analog/Mixed Signal Integrated Circuit Design)
Show Figures

Figure 1

17 pages, 4121 KiB  
Article
Plasma-Enhanced Atomic Layer Deposition of Hematite for Photoelectrochemical Water Splitting Applications
by Thom R. Harris-Lee, Andrew Brookes, Jie Zhang, Cameron L. Bentley, Frank Marken and Andrew L. Johnson
Crystals 2024, 14(8), 723; https://doi.org/10.3390/cryst14080723 - 13 Aug 2024
Viewed by 2134
Abstract
Hematite (α-Fe2O3) is one of the most promising and widely used semiconductors for application in photoelectrochemical (PEC) water splitting, owing to its moderate bandgap in the visible spectrum and earth abundance. However, α-Fe2O3 is limited by [...] Read more.
Hematite (α-Fe2O3) is one of the most promising and widely used semiconductors for application in photoelectrochemical (PEC) water splitting, owing to its moderate bandgap in the visible spectrum and earth abundance. However, α-Fe2O3 is limited by short hole-diffusion lengths. Ultrathin α-Fe2O3 films are often used to limit the distance required for hole transport, therefore mitigating the impact of this property. The development of highly controllable and scalable ultrathin film deposition techniques is therefore crucial to the application of α-Fe2O3. Here, a plasma-enhanced atomic layer deposition (PEALD) process for the deposition of homogenous, conformal, and thickness-controlled α-Fe2O3 thin films (<100 nm) is developed. A readily available iron precursor, dimethyl(aminomethyl)ferrocene, was used in tandem with an O2 plasma co-reactant at relatively low reactor temperatures, ranging from 200 to 300 °C. Optimisation of deposition protocols was performed using the thin film growth per cycle and the duration of each cycle as optimisation metrics. Linear growth rates (constant growth per cycle) were measured for the optimised protocol, even at high cycle counts (up to 1200), confirming that all deposition is ‘true’ atomic layer deposition (ALD). Photoelectrochemical water splitting performance was measured under solar simulated irradiation for pristine α-Fe2O3 deposited onto FTO, and with a α-Fe2O3-coated TiO2 nanorod photoanode. Full article
Show Figures

Figure 1

12 pages, 6042 KiB  
Article
Influence of Flow Rates and Flow Times of Plasma-Enhanced Atomic Layer Deposition Purge Gas on TiN Thin Film Properties
by Ju Eun Kang, Surin An and Sang Jeen Hong
Coatings 2024, 14(6), 673; https://doi.org/10.3390/coatings14060673 - 27 May 2024
Viewed by 2405
Abstract
This study investigated the effect of purge gas flow rate and purge gas flow time on the properties of TiN thin films via chemical reaction simulation and the plasma-enhanced atomic layer deposition (PEALD) process along purge gas flow rates and time settings. Chemical [...] Read more.
This study investigated the effect of purge gas flow rate and purge gas flow time on the properties of TiN thin films via chemical reaction simulation and the plasma-enhanced atomic layer deposition (PEALD) process along purge gas flow rates and time settings. Chemical reaction simulation unveiled an incremental increase in generating volatile products along purge gas flow rates. In contrast, increased purge gas flow times enhanced the desorption of physically adsorbed species flow time in the film surface. Subsequent thin film analysis showed that the increased Ar purge gas flow rate caused a shift of 44% in wafer non-uniformity, 46% in carbon composition, and 11% in oxygen composition in the deposited film. Modulations in the Ar purge gas flow time yielded variations of 50% in wafer non-uniformity, 46% in carbon composition, and 15% in oxygen content. Notably, 38% of the resistivity and 35% of the film thickness occurred due to experimental variations in the Ar purge step condition. Increased purge gas flow rates had a negligible impact on the film composition, thickness, and resistivity, but the film’s non-uniformity on a 6-inch wafer was notable. Extended purge gas flow times with inadequate flow rates resulted in undesired impurities in the thin film. This study employed a method that utilized reaction simulation to investigate the impact of purge gas flow and verified these results through film properties analysis. These findings can help in determining optimal purge conditions to achieve the desired film properties of PEALD-deposited TiN thin films. Full article
Show Figures

Figure 1

15 pages, 2682 KiB  
Article
Field Emission from Carbon Nanotubes on Titanium Nitride-Coated Planar and 3D-Printed Substrates
by Stefanie Haugg, Luis-Felipe Mochalski, Carina Hedrich, Isabel González Díaz-Palacio, Kristian Deneke, Robert Zierold and Robert H. Blick
Nanomaterials 2024, 14(9), 781; https://doi.org/10.3390/nano14090781 - 30 Apr 2024
Cited by 1 | Viewed by 1775
Abstract
Carbon nanotubes (CNTs) are well known for their outstanding field emission (FE) performance, facilitated by their unique combination of electrical, mechanical, and thermal properties. However, if the substrate of choice is a poor conductor, the electron supply towards the CNTs can be limited, [...] Read more.
Carbon nanotubes (CNTs) are well known for their outstanding field emission (FE) performance, facilitated by their unique combination of electrical, mechanical, and thermal properties. However, if the substrate of choice is a poor conductor, the electron supply towards the CNTs can be limited, restricting the FE current. Furthermore, ineffective heat dissipation can lead to emitter–substrate bond degradation, shortening the field emitters’ lifetime. Herein, temperature-stable titanium nitride (TiN) was deposited by plasma-enhanced atomic layer deposition (PEALD) on different substrate types prior to the CNT growth. A turn-on field reduction of up to 59% was found for the emitters that were generated on TiN-coated bulk substrates instead of on pristine ones. This observation was attributed exclusively to the TiN layer as no significant change in the emitter morphology could be identified. The fabrication route and, consequently, improved FE properties were transferred from bulk substrates to free-standing, electrically insulating nanomembranes. Moreover, 3D-printed, polymeric microstructures were overcoated by atomic layer deposition (ALD) employing its high conformality. The results of our approach by combining ALD with CNT growth could assist the future fabrication of highly efficient field emitters on 3D scaffold structures regardless of the substrate material. Full article
(This article belongs to the Special Issue The Research Related to Nanomaterial Cold Cathode II)
Show Figures

Figure 1

30 pages, 6046 KiB  
Review
Recent Achievements for Flexible Encapsulation Films Based on Atomic/Molecular Layer Deposition
by Buyue Zhang, Zhenyu Wang, Jintao Wang and Xinyu Chen
Micromachines 2024, 15(4), 478; https://doi.org/10.3390/mi15040478 - 30 Mar 2024
Cited by 3 | Viewed by 2960
Abstract
The purpose of this paper is to review the research progress in the realization of the organic–inorganic hybrid thin-film packaging of flexible organic electroluminescent devices using the PEALD (plasma-enhanced atomic layer deposition) and MLD (molecular layer deposition) techniques. Firstly, the importance and application [...] Read more.
The purpose of this paper is to review the research progress in the realization of the organic–inorganic hybrid thin-film packaging of flexible organic electroluminescent devices using the PEALD (plasma-enhanced atomic layer deposition) and MLD (molecular layer deposition) techniques. Firstly, the importance and application prospect of organic electroluminescent devices in the field of flexible electronics are introduced. Subsequently, the principles, characteristics and applications of PEALD and MLD technologies in device packaging are described in detail. Then, the methods and process optimization strategies for the preparation of organic–inorganic hybrid thin-film encapsulation layers using PEALD and MLD technologies are reviewed. Further, the research results on the encapsulation effect, stability and reliability of organic–inorganic hybrid thin-film encapsulation layers in flexible organic electroluminescent devices are discussed. Finally, the current research progress is summarized, and the future research directions and development trends are prospected. Full article
(This article belongs to the Special Issue Nanomaterials for Micro/Nano Devices)
Show Figures

Figure 1

8 pages, 1168 KiB  
Communication
Novel Energetic Co-Reactant for Thermal Oxide Atomic Layer Deposition: The Impact of Plasma-Activated Water on Al2O3 Film Growth
by João Chaves, William Chiappim, Júlia Karnopp, Benedito Neto, Douglas Leite, Argemiro da Silva Sobrinho and Rodrigo Pessoa
Nanomaterials 2023, 13(24), 3110; https://doi.org/10.3390/nano13243110 - 10 Dec 2023
Cited by 4 | Viewed by 2030
Abstract
In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced. Utilizing ex situ PAW achieves up to a [...] Read more.
In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced. Utilizing ex situ PAW achieves up to a 16.4% increase in the growth per cycle (GPC) of Al2O3 films, consistent with results from plasma-enhanced atomic layer deposition (PEALD). Time-resolved mass spectrometry (TRMS) revealed disparities in CH4 partial pressures between TMA reactions with DI water and PAW, with PAW demonstrating enhanced reactivity. Reactive oxygen species (ROS), namely H2O2 and O3, are posited to activate Si(100) substrate sites, thereby improving GPC and film quality. Specifically, Al2O3 films grown with PAW pH = 3.1 displayed optimal stoichiometry, reduced carbon content, and an expanded bandgap. This study thus establishes “PAW-ALD” as a descriptor for this ALD variation and highlights the significance of comprehensive assessments of PAW in ALD processes. Full article
(This article belongs to the Special Issue Trends and Prospects in Nanoscale Thin Films and Coatings)
Show Figures

Graphical abstract

11 pages, 1768 KiB  
Article
Less Energetic Routes for the Production of SiOx Films from Tris(dimethylamino)silane by Plasma Enhanced Atomic Layer Deposition
by Danielle C. F. S. Spigarollo, Tsegaye Gashaw Getnet, Rita C. C. Rangel, Tiago F. Silva, Nilson C. Cruz and Elidiane Cipriano Rangel
Coatings 2023, 13(10), 1730; https://doi.org/10.3390/coatings13101730 - 4 Oct 2023
Cited by 1 | Viewed by 1713
Abstract
SiOx films, frequently derived from amino silane precursors, have found several applications with high added value. Although frequently used, the deposition of coatings from Tris(dimethyl amino) silane (TDMAS) has been reported to demand considerable amounts of energy, mainly due to the difficulty [...] Read more.
SiOx films, frequently derived from amino silane precursors, have found several applications with high added value. Although frequently used, the deposition of coatings from Tris(dimethyl amino) silane (TDMAS) has been reported to demand considerable amounts of energy, mainly due to the difficulty of oxidizing such compounds. As is well known, Plasma-enhanced atomic layer deposition (PEALD) is able to improve the oxidation efficiency, even under low processing temperatures. Owing to this, PEALD can be considered a very promising technique for the deposition of SiOx coatings. In this work, the deposition of silicon oxide films using TDMAS at 150 °C has been investigated. The effect of the plasma oxidation time (6 to 18 s) and atmosphere composition (pure O2 or O2 + Ar) on the chemical structure, elemental composition, and chemical bonding state of the films has also been evaluated. Increasing the plasma oxidation time in pure O2 resulted in a larger proportion of retained C (Si-CH3), whereas N was preserved in the structure (Si-N). On the other hand, the formation of SiOx films from TDMAS is favored in shorter oxidation times and O2 + Ar plasmas. Full article
Show Figures

Figure 1

10 pages, 4731 KiB  
Communication
Comparative Study of Thermal and Plasma-Enhanced Atomic Layer Deposition of Iron Oxide Using Bis(N,N′-di-butylacetamidinato)iron(II)
by Boyun Choi, Gun-Woo Park, Jong-Ryul Jeong and Nari Jeon
Nanomaterials 2023, 13(12), 1858; https://doi.org/10.3390/nano13121858 - 14 Jun 2023
Cited by 5 | Viewed by 2500
Abstract
Only a few iron precursors that can be used in the atomic layer deposition (ALD) of iron oxides have been examined thus far. This study aimed to compare the various properties of FeOx thin films deposited using thermal ALD and plasma-enhanced ALD [...] Read more.
Only a few iron precursors that can be used in the atomic layer deposition (ALD) of iron oxides have been examined thus far. This study aimed to compare the various properties of FeOx thin films deposited using thermal ALD and plasma-enhanced ALD (PEALD) and to evaluate the advantages and disadvantages of using bis(N,N′-di-butylacetamidinato)iron(II) as an Fe precursor in FeOx ALD. The PEALD of FeOx films using iron bisamidinate has not yet been reported. Compared with thermal ALD films, PEALD films exhibited improved properties in terms of surface roughness, film density, and crystallinity after they were annealed in air at 500 °C. The annealed films, which had thicknesses exceeding ~ 9 nm, exhibited hematite crystal structures. Additionally, the conformality of the ALD-grown films was examined using trench-structured wafers with different aspect ratios. Full article
(This article belongs to the Special Issue ALD Technique for Functional Coatings of Nanostructured Materials)
Show Figures

Figure 1

17 pages, 2978 KiB  
Article
Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions
by Mohammad Karbalaei Akbari, Nasrin Siraj Lopa and Serge Zhuiykov
Coatings 2023, 13(6), 1041; https://doi.org/10.3390/coatings13061041 - 3 Jun 2023
Cited by 3 | Viewed by 2568
Abstract
Atomic layer deposition (ALD) has emerged as a promising technology for the development of the next generation of low-power semiconductor electronics. The wafer-scaled growth of two-dimensional (2D) crystalline nanostructures is a fundamental step toward the development of advanced nanofabrication technologies. Ga2O [...] Read more.
Atomic layer deposition (ALD) has emerged as a promising technology for the development of the next generation of low-power semiconductor electronics. The wafer-scaled growth of two-dimensional (2D) crystalline nanostructures is a fundamental step toward the development of advanced nanofabrication technologies. Ga2O3 is an ultra-wide bandgap metal oxide semiconductor for application in electronic devices. The polymorphous Ga2O3 with its unique electronic characteristics and doping capabilities is a functional option for heterointerface engineering at metal-semiconductor 2D heterojunctions for application in nanofabrication technology. Plasma-enhanced atomic layer deposition (PE-ALD) enabled the deposition of ultra-thin nanostructures at low-growth temperatures. The present study used the PE-ALD process for the deposition of atomically thin crystalline ß-Ga2O3 films for heterointerface engineering at 2D metal-semiconductor heterojunctions. Via the control of plasma gas composition and ALD temperature, the wafer-scaled deposition of ~5.0 nm thick crystalline ß-Ga2O3 at Au/Ga2O3-TiO2 heterointerfaces was achieved. Material characterization techniques showed the effects of plasma composition and ALD temperature on the properties and structure of Ga2O3 films. The following study on the electronic characteristics of Au/Ga2O3-TiO2 2D heterojunctions confirmed the tunability of this metal/semiconductor polarized junction, which works as functional electron channel layer developed based on tunable p-n junctions at 2D metal/semiconductor interfaces. Full article
(This article belongs to the Special Issue Advanced Films and Coatings Based on Atomic Layer Deposition)
Show Figures

Figure 1

13 pages, 5465 KiB  
Article
Preparation of Remote Plasma Atomic Layer-Deposited HfO2 Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices
by Jae-Hoon Yoo, Won-Ji Park, So-Won Kim, Ga-Ram Lee, Jong-Hwan Kim, Joung-Ho Lee, Sae-Hoon Uhm and Hee-Chul Lee
Nanomaterials 2023, 13(11), 1785; https://doi.org/10.3390/nano13111785 - 1 Jun 2023
Cited by 11 | Viewed by 2373
Abstract
Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the corresponding device. In this study, we fabricated metal–insulator–semiconductor (MIS) [...] Read more.
Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the corresponding device. In this study, we fabricated metal–insulator–semiconductor (MIS) structure capacitors using HfO2 thin films separately deposited by remote plasma (RP) atomic layer deposition (ALD) and direct-plasma (DP) ALD and determined the optimal process temperature by measuring the leakage current and breakdown strength as functions of process temperature. Additionally, we analyzed the effects of the plasma application method on the charge trapping properties of HfO2 thin films and properties of the interface between Si and HfO2. Subsequently, we synthesized charge-trapping memory (CTM) devices utilizing the deposited thin films as charge-trapping layers (CTLs) and evaluated their memory properties. The results indicated excellent memory window characteristics of the RP-HfO2 MIS capacitors compared to those of the DP-HfO2 MIS capacitors. Moreover, the memory characteristics of the RP-HfO2 CTM devices were outstanding as compared to those of the DP-HfO2 CTM devices. In conclusion, the methodology proposed herein can be useful for future implementations of multiple levels of charge-storage nonvolatile memories or synaptic devices that require many states. Full article
(This article belongs to the Special Issue Ferroelectric Nanostructures and Thin Films)
Show Figures

Figure 1

8 pages, 3540 KiB  
Communication
Improving Performance of Al2O3/AlN/GaN MIS HEMTs via In Situ N2 Plasma Annealing
by Mengyuan Sun, Luyu Wang, Penghao Zhang and Kun Chen
Micromachines 2023, 14(6), 1100; https://doi.org/10.3390/mi14061100 - 23 May 2023
Cited by 2 | Viewed by 3115
Abstract
A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al2O3/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD) and in situ N [...] Read more.
A novel monocrystalline AlN interfacial layer formation method is proposed to improve the device performance of the fully recessed-gate Al2O3/AlN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs), which is achieved by plasma-enhanced atomic layer deposition (PEALD) and in situ N2 plasma annealing (NPA). Compared with the traditional RTA method, the NPA process not only avoids the device damage caused by high temperatures but also obtains a high-quality AlN monocrystalline film that avoids natural oxidation by in situ growth. As a contrast with the conventional PELAD amorphous AlN, C-V results indicated a significantly lower interface density of states (Dit) in a MIS C-V characterization, which could be attributed to the polarization effect induced by the AlN crystal from the X-ray Diffraction (XRD) and Transmission Electron Microscope (TEM) characterizations. The proposed method could reduce the subthreshold swing, and the Al2O3/AlN/GaN MIS-HEMTs were significantly enhanced with ~38% lower on-resistance at Vg = 10 V. What is more, in situ NPA provides a more stable threshold voltage (Vth) after a long gate stress time, and ΔVth is inhibited by about 40 mV under Vg,stress = 10 V for 1000 s, showing great potential for improving Al2O3/AlN/GaN MIS-HEMT gate reliability. Full article
(This article belongs to the Special Issue Advanced Micro- and Nano-Manufacturing Technologies)
Show Figures

Figure 1

Back to TopTop