Sign in to use this feature.

Years

Between: -

Subjects

remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline
remove_circle_outline

Journals

Article Types

Countries / Regions

Search Results (62)

Search Parameters:
Keywords = planar interconnects

Order results
Result details
Results per page
Select all
Export citation of selected articles as:
24 pages, 23229 KB  
Review
Evolution of Stack Architecture and Interconnect Technology for Detector Array Chips
by Mingyue Shi, Ming Yan, Lu Liu, Errui Zhou and Peng Xu
Electronics 2026, 15(12), 2588; https://doi.org/10.3390/electronics15122588 - 11 Jun 2026
Viewed by 242
Abstract
The detector array chips can be used to capture the transient space-time signal of the pulse radiation field. It is mainly composed of a photoelectric array detector and a readout circuit. However, the metal leads used to connect the detector and the readout [...] Read more.
The detector array chips can be used to capture the transient space-time signal of the pulse radiation field. It is mainly composed of a photoelectric array detector and a readout circuit. However, the metal leads used to connect the detector and the readout circuit have long spacing. This can easily introduce additional delays, resulting in a decrease in the response performance of the chip, which cannot meet the goal of simultaneous transmission of ultra-fast detection signals. In recent years, the rapid development of three-dimensional interconnect technology has enabled the chip to achieve shorter interconnect spacing, smaller parasitic parameters and smaller delay time, thereby improving system response performance. The integrated detector array chips composed of three-dimensional interconnects has the advantages of fast signal interconnection transmission speed, high bandwidth, process compatibility and functional expansion compared with the traditional planar architecture. At the same time, there are some limitations and challenges. Therefore, this paper mainly reviews the evolution characteristics of the stacked architecture of the detector array chips, the process development and the nanosecond-level transmission integration challenges. This paper effectively incorporates the three into a unified framework. This provides a solution for the realization of integrated nanosecond detector array chips. Furthermore, it promotes the application and expansion of the chip in the pulse radiation field diagnosis technology. Full article
(This article belongs to the Section Electronic Materials, Devices and Applications)
Show Figures

Figure 1

25 pages, 25077 KB  
Article
Rule-Based Layout-Driven Parasitic RC Extraction for Post-Layout SPICE Simulation of CMOS ICs
by Oleksandr M. Grudanov, Mykola B. Grudanov and Volodymyr M. Shutko
Chips 2026, 5(2), 13; https://doi.org/10.3390/chips5020013 - 28 May 2026
Viewed by 289
Abstract
This paper presents a rule-based LVS-driven methodology for parasitic RC extraction from CMOS layouts for post-layout SPICE simulation. The proposed approach operates directly within foundry-qualified rule environments, ensuring consistency with Process Design Kits (PDKs) and enabling seamless integration with existing design and verification [...] Read more.
This paper presents a rule-based LVS-driven methodology for parasitic RC extraction from CMOS layouts for post-layout SPICE simulation. The proposed approach operates directly within foundry-qualified rule environments, ensuring consistency with Process Design Kits (PDKs) and enabling seamless integration with existing design and verification flows without requiring field-solver execution during the production extraction flow. The methodology provides a generalized framework for deriving electrical parameters from layout geometries and is applicable to interconnects, contacts, vias, and gate structures in multilayer CMOS technologies. By decomposing conductive regions into directional components and applying geometric and Boolean operations, the method captures the impact of layout topology and process-dependent features on circuit-level behavior. In addition, a model-order reduction technique based on π-equivalent representations is introduced to simplify the resulting networks while preserving timing accuracy. This enables the scalable simulation of complex layouts with reduced computational overhead. The proposed framework supports layout optimization, variability-aware design, and process-technology co-design, particularly for mature and advanced planar nodes. The methodology is evaluated using register-file layout test cases and post-layout SPICE simulations. The results show that the proposed rule-based extraction and RC-merging flow preserve timing behavior while reducing netlist complexity. Full article
(This article belongs to the Special Issue IC Design Techniques for Power/Energy-Constrained Applications)
Show Figures

Figure 1

23 pages, 3038 KB  
Article
Investigation and Architectural Design of Optimal Interconnections Pertaining to Losses in Planar Transformer Windings
by Jingyi Xie, Mou He, Subin Lin and Wei Chen
Electronics 2026, 15(10), 2032; https://doi.org/10.3390/electronics15102032 - 10 May 2026
Viewed by 288
Abstract
High-frequency, high-power-density planar transformers represent a key development direction for magnetic components in power converters, with winding loss optimization being a critical design issue. Under low-voltage, high-current operating conditions, the optimization potential of conventional parameters—such as operating frequency, copper thickness, and insulation thickness—is [...] Read more.
High-frequency, high-power-density planar transformers represent a key development direction for magnetic components in power converters, with winding loss optimization being a critical design issue. Under low-voltage, high-current operating conditions, the optimization potential of conventional parameters—such as operating frequency, copper thickness, and insulation thickness—is severely constrained by circuit topology and fabrication process limitations. As the number of paralleled PCB layer increases, the possible interlayer connection arrangements grow exponentially. Existing methods largely rely on enumerating and comparing predefined structures, lacking a systematic optimization approach and making it difficult to balance computational efficiency with global optimality. To address this problem, this paper proposes a systematic optimization method for the connection arrangement of parallel windings in planar transformers based on an impedance matrix and mathematical programming. First, an impedance-matrix-based loss model is established that uses the connection arrangement as an explicit variable, reducing the per-evaluation time to approximately 1% and eliminating the cumbersome need to rebuild the model for each candidate as in conventional approaches. The connection arrangement optimization problem is then transformed into a standard mathematical programming problem, enabling fast global solution for the optimal connections. The validity of the proposed model and optimization method is verified through impedance measurements and comparative simulations. This work provides a systematic solution for the interlayer connection design of high-frequency, high-current planar transformers. Full article
Show Figures

Figure 1

12 pages, 3439 KB  
Article
Far-Field Terahertz Spectroscopy of a Subwavelength Single Planar Meta-Atom
by Surya Revanth Ayyagari, Simonas Indrišiūnas, Guillaume Ducournau, Vytautas Janonis and Irmantas Kašalynas
Appl. Sci. 2026, 16(10), 4608; https://doi.org/10.3390/app16104608 - 7 May 2026
Viewed by 307
Abstract
Accurate measurements of light–matter interactions at subwavelength scales are critical for advancing nanophotonic and quantum optical technologies. In this paper, we present the far-field terahertz (THz) spectroscopy of a single planar meta-atom of subwavelength dimensions embedded within a square or circular aperture on [...] Read more.
Accurate measurements of light–matter interactions at subwavelength scales are critical for advancing nanophotonic and quantum optical technologies. In this paper, we present the far-field terahertz (THz) spectroscopy of a single planar meta-atom of subwavelength dimensions embedded within a square or circular aperture on a thin free-standing metal film. The meta-atom, composed of concentric disk and ring structures interconnected by narrow bridges, was fabricated by a mask-less direct laser ablation (DLA) technique to exhibit a pronounced transmission peak near a resonance frequency of 0.35 THz. We propose a novel spectral analysis framework that accounts for aperture-to-beam area mismatch suppressing non-resonant background contributions originating from edge diffraction and aperture discontinuities which are commonly encountered in subwavelength geometries. This technical analysis yields transmission spectra with improved accuracy providing good agreement with finite-difference time-domain (FDTD) simulations. A foundation for precise optical characterization of a single subwavelength size resonator is demonstrated paving the way for applications in quantum sensing, meta-surface design, and low-dimensional optoelectronic systems. Full article
Show Figures

Graphical abstract

18 pages, 20184 KB  
Article
Highly Efficient Polarization-Insensitive Wide-Angle Orthogonal Dipole Metasurface for Ambient Energy Harvesting
by Yiqing Wei, Zhensen Gao, Haixia Li and Zhibin Li
Micromachines 2026, 17(5), 563; https://doi.org/10.3390/mi17050563 - 1 May 2026
Viewed by 344
Abstract
This work proposes a polarization-insensitive scalable wide-angle metasurface array for highly efficient ambient energy harvesting in the 5.8 GHz Wi-Fi band. Inspired by dipole antenna principles, we design an asymmetric planar orthogonal dipole-based metasurface featuring monolithic integration of Schottky diodes (HSMS-2860) at unit [...] Read more.
This work proposes a polarization-insensitive scalable wide-angle metasurface array for highly efficient ambient energy harvesting in the 5.8 GHz Wi-Fi band. Inspired by dipole antenna principles, we design an asymmetric planar orthogonal dipole-based metasurface featuring monolithic integration of Schottky diodes (HSMS-2860) at unit cell feed gaps. This novel direct-impedance-matching strategy eliminates conventional matching networks, reducing energy conversion losses while enabling 99% radiation-to-AC efficiency across all polarization angles at 5.8 GHz. The coplanar architecture interconnects metasurface unit cells via inductors, simultaneously establishing low-loss DC channels and suppressing RF leakage. Fabricated as a 5 × 5 array, the prototype achieves 77.9% peak RF-to-DC efficiency with polarization insensitivity at an incident power of 25 dBm. Furthermore, with incident powers of 15 dBm and 20 dBm, the proposed metasurface array attained RF-to-DC conversion efficiencies exceeding 40% and 60%, respectively. This result indicates that the array is capable of achieving high energy harvesting efficiency across a broad power range. This scalable, drill-free, and polarization-insensitive design demonstrates strong potential for harvesting ambient RF energy in real-world multipath environments. Full article
(This article belongs to the Special Issue Research Progress in Energy Harvesters and Self-Powered Sensors)
Show Figures

Figure 1

11 pages, 2746 KB  
Article
X-Ray Inside Clarifications Concerning the Acylation Reaction of 8-Hydroxyquinoline
by Roxana Angela Tucaliuc, Sergiu Shova, Violeta Mangalagiu and Ionel I. Mangalagiu
Crystals 2026, 16(4), 259; https://doi.org/10.3390/cryst16040259 - 12 Apr 2026
Viewed by 571
Abstract
We report here a thorough study concerning the acylation reaction products of 8-hydroxyquinoline with 2-chloroacyl chloride, with new insights and clarifications in respect to the obtained products brought by NMR and X-ray studies. According to the reaction conditions we employed, three compounds could [...] Read more.
We report here a thorough study concerning the acylation reaction products of 8-hydroxyquinoline with 2-chloroacyl chloride, with new insights and clarifications in respect to the obtained products brought by NMR and X-ray studies. According to the reaction conditions we employed, three compounds could be obtained: 1-(2-chloro-2-oxoethyl)pyridin-1-ium chloride 10, 8-hydroxyquinoline hydrochloride 11, and the acylated product 8-(2-chloroacetoxy)quinolin-1-ium chloride 12. A certain influence of the catalyst and the used solvent was observed, and feasible explanations for product formations were furnished. The structure of the compounds was proved by using 1H- and 13C-NMR spectra as well as single-crystal X-ray diffraction studies for compounds 12 and 11. According to X-ray crystallography, compounds 11 and 12 have a planar structure and exhibit an ionic crystal structure crystallized as a hydrochloride salt of the corresponding organic base. The crystal structures of both compounds are stabilized by intermolecular hydrogen bonds and π-π stacking interactions. In the crystals of compounds 11 and 12, the structural components are interconnected by a system of intermolecular hydrogen bonding, and a similar one-dimensional array is formed via hydrogen bonding and π-π stacking. The further assembling of the structure for 12 and 11 occurs with the formation of a three-dimensional supramolecular network. Full article
(This article belongs to the Section Organic Crystalline Materials)
Show Figures

Figure 1

37 pages, 4098 KB  
Article
Mitigating Galvanic Corrosion of Molybdenum Diffusion Barriers in Chemical Mechanical Planarization of Copper Interconnects: A Case Study Using Imidazole in a Citrate Slurry of Neutral pH
by Kassapa U. Gamagedara and Dipankar Roy
Electrochem 2026, 7(1), 6; https://doi.org/10.3390/electrochem7010006 - 14 Mar 2026
Viewed by 1593
Abstract
Molybdenum (Mo) is currently considered as a potential diffusion barrier material for copper (Cu) interconnects, and these interconnect structures are generally processed using the technique of chemical mechanical planarization (CMP). While a limited number of publications on Mo CMP are presently available, the [...] Read more.
Molybdenum (Mo) is currently considered as a potential diffusion barrier material for copper (Cu) interconnects, and these interconnect structures are generally processed using the technique of chemical mechanical planarization (CMP). While a limited number of publications on Mo CMP are presently available, the considerations for mitigating CMP-induced galvanic corrosion of Mo have remained largely underexplored. Using a model CMP system in pH-neutral slurries of citric acid with silica abrasives, the present work demonstrates how Mo barrier lines in contact with Cu wires in the CMP environment can develop CMP defects of galvanic corrosion. Including imidazole in the slurry considerably reduces the galvanic current of this corrosion process. The mechanisms of galvanic inhibition and material removal are examined by employing strategic tribo-electrochemical measurements. Open-circuit potential and potentiodynamic polarization measurements performed under surface abrasion aid the characterization of CMP-enabling surface reactions. The slurry’s surface chemistry initiates the primary modes of material wear for CMP, and corrosion-induced propagation of subsurface wear mostly governs the measured material removal rates for both Mo and Cu. Although the Cu:Mo selectivity of material removal is affected as the galvanic corrosion of Mo is suppressed, this effect can be controlled by varying the slurry content of imidazole. Full article
Show Figures

Figure 1

13 pages, 1954 KB  
Article
Tailored Shell Engineering of γ-Fe2O3@SiO2 Nanoparticles for High-Performance and Recyclable Chemical Mechanical Planarization
by Young Seo Kim and Gye Seok An
Processes 2026, 14(6), 902; https://doi.org/10.3390/pr14060902 - 12 Mar 2026
Cited by 1 | Viewed by 521
Abstract
As semiconductor devices continue to scale down and integrate more densely, the atomic-level planarization of metal interconnects and dielectric layers is critical. Consequently, the development of chemical mechanical planarization (CMP) materials must address both high polishing performance and environmental sustainability. In this study, [...] Read more.
As semiconductor devices continue to scale down and integrate more densely, the atomic-level planarization of metal interconnects and dielectric layers is critical. Consequently, the development of chemical mechanical planarization (CMP) materials must address both high polishing performance and environmental sustainability. In this study, γ-Fe2O3@SiO2 core–shell abrasive particles were designed to overcome the performance and recyclability limitations of conventional SiO2 abrasives. The γ-Fe2O3 core enables an efficient magnetic separation from spent slurry, while the tunable SiO2 shell enhances the dispersion stability and modulates the polishing characteristics. When applied to the CMP of tungsten (W) thin films, the optimized γ-Fe2O3@SiO2 abrasives achieved a higher removal rate and lower surface roughness than commercial SiO2-based slurries. Notably, the abrasives maintained a high performance even after 10 reuse cycles through simple magnetic recovery. This demonstrates a highly efficient and sustainable design strategy for next-generation CMP materials. Full article
(This article belongs to the Special Issue Synthesis and Applications of Nanomaterials)
Show Figures

Figure 1

15 pages, 2428 KB  
Article
Tantalum Interconnect Metallization for Thin-Film Neural Interface Devices
by Justin R. Abbott, Yupeng Wu, Zachariah M. Campanini, Alexandra Joshi-Imre, Felix Deku and Stuart F. Cogan
Micromachines 2026, 17(3), 334; https://doi.org/10.3390/mi17030334 - 10 Mar 2026
Viewed by 820
Abstract
Neural interfaces created using thin-film fabrication rely primarily on conductive metal traces for electrical interconnects. Here, we explore the use of tantalum (Ta) metal interconnects as a replacement for noble-metal interconnects such as Au, Pt or Ir. Ta has been investigated previously for [...] Read more.
Neural interfaces created using thin-film fabrication rely primarily on conductive metal traces for electrical interconnects. Here, we explore the use of tantalum (Ta) metal interconnects as a replacement for noble-metal interconnects such as Au, Pt or Ir. Ta has been investigated previously for interconnect metallization in flexible silicon ribbon cables, but the structure and properties of tantalum for neural device metallization have not been extensively reported. In the present work, Ta metal was sputter-deposited onto amorphous silicon carbide (a-SiC), with and without a base titanium (Ti) adhesion layer, and investigated as interconnect metallization. In the absence of a Ti adhesion layer, resistivity measurements revealed a factor of six difference between Ta resistivity depending on the presence of the Ti base layer, with direct deposition on a-SiC nucleating high resistivity β-Ta (ρ = 197 ± 31 µΩ·cm, mean ± standard deviation) and Ta deposited on Ti nucleating low resistivity α-Ta (ρ = 35 ± 6 µΩ·cm). X-ray diffraction confirmed the existence of the two crystal structures. Ta feature sizes of 2 µm were created using photolithography and reactive ion etching (RIE). Finally, planar microelectrode array test structures using α-Ta and Au trace metallization with low-impedance ruthenium oxide (RuOx) electrodes were fabricated and investigated by cyclic voltammetry (CV) and current pulsing in saline. These devices underwent 500 CV cycles between −0.6 and +0.6 V without evidence of degradation. In response to charge-balanced, biphasic current pulses at 4 nC/phase, a 21 mV increase in access voltage was observed with α-Ta metallization compared to Au. These results warrant further investigation of Ta as thin-film metallization interconnects for neural interface devices. Full article
(This article belongs to the Special Issue Neural Microelectrodes: Design, Integration, and Applications)
Show Figures

Graphical abstract

16 pages, 6721 KB  
Article
Hierarchically Structured Porous Electro-Conductive Aerogels for All-Solid-State Flexible Planar Supercapacitors with Cyclic Stability
by Huixiang Wang, Kaiquan Zhang and Ya Lu
Gels 2026, 12(3), 221; https://doi.org/10.3390/gels12030221 - 7 Mar 2026
Cited by 1 | Viewed by 897
Abstract
Flexible supercapacitors have attracted significant attention as promising power sources for portable and wearable electronic devices. However, achieving simultaneous high power density, energy density and long-term cyclic stability in a simple device configuration remains a critical challenge. Herein, we report an all-solid-state flexible [...] Read more.
Flexible supercapacitors have attracted significant attention as promising power sources for portable and wearable electronic devices. However, achieving simultaneous high power density, energy density and long-term cyclic stability in a simple device configuration remains a critical challenge. Herein, we report an all-solid-state flexible planar supercapacitor based on hierarchically structured cellulose nanofiber-carbon nanotube@manganese dioxide (CNF-CNT@MnO2) composite aerogels. The electrode architecture is rationally designed by first dispersing CNTs within a hydrophilic CNF scaffold to form a conductive three-dimensional network, followed by in situ oxidative polymerization of MnO2 onto the CNF-CNT fibrous skeleton. The hydrophilic CNFs network ensures thorough electrolyte penetration, the interconnected CNTs facilitate rapid electron transport, and the uniformly coated MnO2 layer provides substantial pseudocapacitance. The aerogel electrode with a low density of 14.6 mg cm−3 and a high specific surface area of 214.4 m2 g−1 delivers a specific capacitance of 273.0 F g−1 at 0.4 A g−1. The assembled planar supercapacitor, incorporating gel electrolyte and a flexible hydrogel substrate, achieves an impressive areal capacitance of 885.0 mF cm−2 at 2 mA cm−2, energy density of 122.9 μWh cm−2 and corresponding power density of 1000.0 μW cm−2. The device exhibits excellent electrochemical stability, retaining 83.3% capacitance after 2500 charge–discharge cycles, and outstanding mechanical flexibility, with 96.3% capacitance retention after 200 repeated bending cycles. Furthermore, multiple devices can be connected in series or parallel to proportionally increase output voltage or current, meeting the practical power requirements of electronic applications. This work offers a viable pathway toward high-performance, durable energy storage solutions for next-generation wearable electronics. Full article
(This article belongs to the Section Gel Chemistry and Physics)
Show Figures

Graphical abstract

16 pages, 8520 KB  
Article
Trade-Off Between Surface Roughness and Crystallographic Orientation in Copper Electrodeposition via High-Concentration Gelatin
by Yitao Zheng, Peng Xu, Jingsha Tan, Zhijie Wen and Guozhe Meng
Materials 2026, 19(5), 895; https://doi.org/10.3390/ma19050895 - 27 Feb 2026
Viewed by 553
Abstract
High-frequency 5G/6G communications demand copper foils combining sub-micron surface roughness (Rz < 0.6 μm) to minimize the skin effect with (111)-preferred orientation (for electromigration resistance), a balance challenging to achieve in conventional electrodeposition. This study quantifies the synergistic mechanism of a [...] Read more.
High-frequency 5G/6G communications demand copper foils combining sub-micron surface roughness (Rz < 0.6 μm) to minimize the skin effect with (111)-preferred orientation (for electromigration resistance), a balance challenging to achieve in conventional electrodeposition. This study quantifies the synergistic mechanism of a systematic series of additive formulations—from unary sodium 3-mercapto-1-propanesulfonate (MPS) to a quaternary MPS + polyethylene glycol (PEG) + Cl + gelatin (GEL) formulation—using electrochemical and microstructural analyses. While the ternary MPS + PEG + Cl system induced severe surface roughening (Rq = 449.5 nm) due to competitive adsorption, the introduction of high-concentration gelatin induced a kinetic bifurcation. It established a distinct “High-N/Low-D” regime—characterized by a 104-fold reduction in diffusion coupled with a 103-fold enhancement in nucleation, effectively suppressing the growth, reducing roughness from ~449.5 nm to ~81.3 nm via robust steric hindrance. However, this isotropic suppression simultaneously inhibited preferential crystal growth, leading to texture randomization. These findings kinetically quantify the intrinsic trade-off between extreme surface planarization and crystallographic orientation, providing a theoretical framework for designing high-performance interconnect materials. Full article
(This article belongs to the Special Issue Advanced Coating Research for Metal Surface Protection)
Show Figures

Figure 1

20 pages, 3079 KB  
Review
Comparative Numerical Study on Flow Characteristics of 4 × 1 kW SOFC Stacks with U-Type and Z-Type Connection Configurations
by Xiaotian Duan, Haoyuan Yin, Youngjin Kim, Kunwoo Yi, Hyeonjin Kim, Kyongsik Yun and Jihaeng Yu
Batteries 2026, 12(1), 28; https://doi.org/10.3390/batteries12010028 - 14 Jan 2026
Cited by 1 | Viewed by 1915
Abstract
In this study, a high-fidelity, full-scale three-dimensional Computational Fluid Dynamics (CFD) model was developed to analyze the effects of U-type and Z-type interconnection configurations on flow and distribution uniformity within a 4 × 1 kW planar solid oxide fuel cell (SOFC) stack composed [...] Read more.
In this study, a high-fidelity, full-scale three-dimensional Computational Fluid Dynamics (CFD) model was developed to analyze the effects of U-type and Z-type interconnection configurations on flow and distribution uniformity within a 4 × 1 kW planar solid oxide fuel cell (SOFC) stack composed of 40 unit cells. Mesh independence was verified using the Richardson extrapolation method. The results reveal that on the anode (fuel inlet) side, the Z-type configuration exhibits significantly better flow and pressure uniformity than the U-type configuration and shows low sensitivity to variations in fuel utilization (Uf = 0.3–0.8), maintaining stable flow distribution under different conditions. On the cathode (air inlet) side, however, the U-type configuration demonstrates superior flow stability at an air utilization rate of 0.3. Therefore, it is recommended to employ the Z-type configuration for the anode and the U-type configuration for the cathode to achieve more uniform gas distribution and enhanced operational stability. These findings provide valuable insights for optimizing the design and operation of solid oxide fuel cells (SOFCs) and offer guidance for the development of more efficient fuel cell systems. Full article
(This article belongs to the Special Issue Solid Oxide Fuel Cells (SOFCs))
Show Figures

Figure 1

16 pages, 5512 KB  
Article
Evaluation of Sintered Powder Metallurgy Fe-Cr Alloys as Metallic Interconnects for Solid Oxide Fuel Cell Applications
by Chien-Kuo Liu and Wei-Ja Shong
Metals 2025, 15(12), 1370; https://doi.org/10.3390/met15121370 - 12 Dec 2025
Cited by 1 | Viewed by 924
Abstract
Metallic interconnects are key components in planar solid oxide fuel cell (SOFC) stacks. In the present study, we evaluated four Fe-Cr powder metallurgy (PM) alloy specimens, obtained from a domestic manufacturer, at nominal compositions (in wt%) of 5% Fe-95% Cr, 30% Fe-70% Cr, [...] Read more.
Metallic interconnects are key components in planar solid oxide fuel cell (SOFC) stacks. In the present study, we evaluated four Fe-Cr powder metallurgy (PM) alloy specimens, obtained from a domestic manufacturer, at nominal compositions (in wt%) of 5% Fe-95% Cr, 30% Fe-70% Cr, 50% Fe-50% Cr, and 78% Fe-22% Cr. These specimens were tested and evaluated for use in SOFC stack applications. The verification items included coefficient of thermal expansion measurements, high-temperature oxidation resistance and weight gain tests, mechanical strength tests, high-temperature sealant bonding and leakage rate measurements, and high-temperature electrical property (i.e., area-specific resistance) measurements. In addition, the specimens’ microstructures and elemental compositions were observed and analyzed. The test results indicate that the Fe content of the Fe-Cr powder metallurgy alloys influences various properties, while Cr also plays a significant role in high-temperature oxidation resistance. Among the four alloy specimens, the 78Fe-Cr alloy exhibited all of the aforementioned advantages, including a suitable coefficient of thermal expansion of 12.4 × 10−6/°C, excellent high-temperature oxidation resistance, a thermal weight-gain rate of 5.31 × 10−14 g2/cm4·s, a remarkably low high-temperature area-specific resistance of 7.04 mΩ·cm2, and superior bonding and interfacial stability with the GC9 glass–ceramic sealant, achieving a very low leakage rate of 3.47 × 10−6 mbar·l/s/cm. These results indicate that the 78Fe-Cr powder metallurgy alloy performs excellently and is the most promising candidate for metallic interconnects in SOFC stack applications. Full article
(This article belongs to the Section Metallic Functional Materials)
Show Figures

Figure 1

15 pages, 37613 KB  
Article
Wideband Reconfigurable Reflective Metasurface with 1-Bit Phase Control Based on Polarization Rotation
by Zahid Iqbal, Xiuping Li, Zihang Qi, Wenyu Zhao, Zaid Akram and Muhammad Ishfaq
Telecom 2025, 6(3), 65; https://doi.org/10.3390/telecom6030065 - 3 Sep 2025
Cited by 2 | Viewed by 3371
Abstract
The rapid expansion of broadband wireless communication systems, including 5G, satellite networks, and next-generation IoT platforms, has created a strong demand for antenna architectures capable of real-time beam control, compact integration, and broad frequency coverage. Traditional reflectarrays, while effective for narrowband applications, often [...] Read more.
The rapid expansion of broadband wireless communication systems, including 5G, satellite networks, and next-generation IoT platforms, has created a strong demand for antenna architectures capable of real-time beam control, compact integration, and broad frequency coverage. Traditional reflectarrays, while effective for narrowband applications, often face inherent limitations such as fixed beam direction, high insertion loss, and complex phase-shifting networks, making them less viable for modern adaptive and reconfigurable systems. Addressing these challenges, this work presents a novel wideband planar metasurface that operates as a polarization rotation reflective metasurface (PRRM), combining 90° polarization conversion with 1-bit reconfigurable phase modulation. The metasurface employs a mirror-symmetric unit cell structure, incorporating a cross-shaped patch with fan-shaped stub loading and integrated PIN diodes, connected through vertical interconnect accesses (VIAs). This design enables stable binary phase control with minimal loss across a significantly wide frequency range. Full-wave electromagnetic simulations confirm that the proposed unit cell maintains consistent cross-polarized reflection performance and phase switching from 3.83 GHz to 15.06 GHz, achieving a remarkable fractional bandwidth of 118.89%. To verify its applicability, the full-wave simulation analysis of a 16 × 16 array was conducted, demonstrating dynamic two-dimensional beam steering up to ±60° and maintaining a 3 dB gain bandwidth of 55.3%. These results establish the metasurface’s suitability for advanced beamforming, making it a strong candidate for compact, electronically reconfigurable antennas in high-speed wireless communication, radar imaging, and sensing systems. Full article
Show Figures

Figure 1

10 pages, 3321 KB  
Article
Growth Kinetics of Ni3Ga7 in Ni/Ga System During Interfacial Reaction Diffusion
by Jun Peng, Tao Wang and Shuai Zhang
Crystals 2025, 15(6), 520; https://doi.org/10.3390/cryst15060520 - 29 May 2025
Cited by 1 | Viewed by 1628
Abstract
In order to apply Ga alloys to flexible and wearable electronic devices, it is crucial to verify the mechanical reliability of interconnections between Ga and various metal electrodes. This study investigated the phase transformation kinetics and microstructural evolution in the Ni/Ga couple. The [...] Read more.
In order to apply Ga alloys to flexible and wearable electronic devices, it is crucial to verify the mechanical reliability of interconnections between Ga and various metal electrodes. This study investigated the phase transformation kinetics and microstructural evolution in the Ni/Ga couple. The diffusion reaction behavior between nickel and gallium was characterized from 323 K to 623 K for different annealing times. At temperatures lower than 323 K, no obvious intermetallic compound was identified after annealing, according to SEM observation. For reactions at temperatures higher than 423 K, the Ni3Ga7 phase was identified as the only reaction product formed, occurring in a planar morphology along the Ni/Ga interface. The activation energy for the growth of Ni3Ga7 was determined as 58.58 kJ/mol. The kinetic equation expressing the relationship between the thickness of interfacial intermetallic compound, annealing temperature, and time, is the following: d=417174.55exp58579RTt2.040.0024T. Full article
(This article belongs to the Section Crystal Engineering)
Show Figures

Figure 1

Back to TopTop