Search Results (409)

Improving charge transport in the aggregated state of nanocomposites is challenging due to the large number of defects present at grain boundaries. To enhance the charge transfer and photogenerated carrier extraction of MnO_x nanofibers, a MnO_x/GO (graphene oxide) nanocomposite was prepared. The effects of GO content and bias on the optoelectronic properties were studied. Representative light sources at 405, 650, 780, 808, 980, and 1064 nm were used to examine the photoelectric signals. The results indicate that the MnO_x/GO nanocomposites have photocurrent switching behaviours from the visible region to the NIR (near-infrared) when the amount of GO added is optimised. It was also found that even with zero bias and storage of the nanocomposite sample at room temperature for over 8 years, a good photoelectric signal could still be extracted. This demonstrates that the MnO_x/GO nanocomposites present a strong built-in electric field that drives the directional motion of photogenerated carriers, avoids the photogenerated carrier recombination, and reflect a good photophysical stability. The strength of the built-in electric field is strongly affected by the component ratios of the resulting nanocomposite. The formation of the built-in electric field results from interfacial charge transfer in the nanocomposite. Modulating the charge behaviour of nanocomposites can significantly improve the physicochemical properties of materials when excited by light with different wavelengths and can be used in multidisciplinary applications. Since the recombination of photogenerated electron–hole pairs is the key bottleneck in multidisciplinary fields, this study provides a simple, low-cost method of tailoring defects at grain boundaries in the aggregated state of nanocomposites. These results can be used as a reference for multidisciplinary fields with low energy consumption. Full article

Skin autofluorescence (SAF) detection technology represents a noninvasive, convenient, and cost-effective optical detection approach. It can be employed for the differentiation of various diseases, including metabolic diseases and dermatitis, as well as for monitoring the treatment efficacy. Distinct from diffuse reflection signals, the autofluorescence signals of biological tissues are relatively weak, making them challenging to be captured by photoelectric sensors. Moreover, the absorption and scattering properties of biological tissues lead to a substantial attenuation of the autofluorescence of biological tissues, thereby worsening the signal-to-noise ratio. This has also imposed limitations on the development and application of compact-sized autofluorescence detection systems. In this study, a compact LED light source and a CMOS sensor were utilized as the excitation and detection devices for skin tissue autofluorescence, respectively, to construct a mobile and wireless skin tissue autofluorescence detection system. This system can achieve the detection of skin tissue autofluorescence with a high signal-to-noise ratio under the drive of a simple power supply and a single-chip microcontroller. The detection time is less than 0.1 s. To enhance the stability of the system, a pressure sensor was incorporated. This pressure sensor can monitor the pressure exerted by the skin on the detection system during the testing process, thereby improving the accuracy of the detection signal. The developed system features a compact structure, user-friendliness, and a favorable signal-to-noise ratio of the detection signal, holding significant application potential in future assessments of skin aging and the risk of diabetic complications. Full article

The strategic construction of heterojunctions through a simple and efficient strategy is one of the most effective means to boost the photocatalytic activity of semiconductor materials. Herein, a thiazole-linked covalent organic framework (TZ-COF) with large surface area, well-ordered pore structure, and high stability was developed. To further boost photocatalytic activity, the TZ-COF was synthesized in situ on the surface of Cu₂O through a simple multicomponent reaction, yielding an encapsulated composite material (Cu₂O@TZ-COF-18). In this composite, the outermost COF endows the material with abundant redox active sites and mass transfer channels, while the innermost Cu₂O exhibits unique photoelectric properties. Notably, the synthesized Cu₂O@TZ-COF-18 was proven to have the heterojunction structure, which can efficiently restrain the recombination of photogenerated electron–hole pairs, thereby enhancing the photocatalytic performance. The photocatalytic degradation of tetracycline demonstrated that 3-Cu₂O@TZ-COF-18 had the highest photocatalytic efficiency, with the removal rate of 96.3% within 70 min under visible light, which is better than that of pristine TZ-COF-18, Cu₂O, the physical mixture of Cu₂O and TZ-COF-18, and numerous reported COF-based composite materials. 3-Cu₂O@TZ-COF-18 retained its original crystallinity and removal efficiency after five cycles in photodegradation reaction, displaying high stability and excellent cycle performance. Full article

Perovskite solar cells (PSCs) leverage the exceptional photoelectric properties of perovskite materials, yet interfacial energy level mismatches limit carrier extraction efficiency. In this work, energy level alignment was exploited to reduce the charge transport barrier, which can be conducive to the transmission of photo-generated carriers and reduce the probability of electron–hole recombination. We designed a dual-transition perovskite solar cell (PSC) with the structure of FTO/TiO₂/Nb₂O₅/CH₃NH₃PbI₃/MoO₃/Spiro-OMeTAD/Au by finite element analysis methods. Compared with the pristine device (FTO/TiO₂/CH₃NH₃PbI₃/Spiro-OMeTAD/Au), the open-circuit voltage of the optimized cell increases from 0.98 V to 1.06 V. Furthermore, the design of a circular platform light-trapping structure makes up for the light loss caused by the transition at the interface. The short-circuit current density of the optimized device increases from 19.81 mA/cm² to 20.36 mA/cm², and the champion device’s power conversion efficiency (PCE) reaches 17.83%, which is an 18.47% improvement over the planar device. This model provides new insight for the optimization of perovskite devices. Full article

This study develops an optimized femtosecond laser welding process for joining quartz glass and TC4 titanium alloy (Ti-6Al-4V) under non-optical contact conditions, specifically addressing the manufacturing needs of specialized photoelectric effect research containers. The joint primarily consists of parallel laser-welded zones (WZ) interspersed with base material. The defocus distance of the femtosecond laser predominantly influences the depth and phase composition of the WZ, while the weld spacing influences the crack distribution in the joint region. The maximum shear strength of 14.4 MPa was achieved at a defocusing distance of +0.1 mm (below the interface) and a weld spacing of 40 μm. The XRD stress measurements indicate that the defocusing distance mainly affects the stress along the direction of laser impact (DLI), whereas the weld spacing primarily influences the stress along the direction of spacing (DS). GPA results demonstrate that when the spacing is less than 30 μm, the non-uniform shrinkage inside the WZ induces tensile stress in the joint, leading to significant fluctuations in DS residual stress and consequently affecting the joint’s shear strength. This study investigates the effects of process parameters on the mechanical properties of dissimilar joints and, for the first time, analyzes the relationship between joint residual strain and femtosecond laser weld spacing, providing valuable insights for optimizing femtosecond laser welding processes. Full article

Lead halide perovskite quantum dots, also known as perovskite nanocrystals, are considered one of the most promising photovoltaic materials for solar cells due to their outstanding optoelectronic properties and simple preparation techniques. The key factors restricting the photoelectric conversion efficiency of solar cell systems are the separation and transmission performances of charge carriers. Here, femtosecond time-resolved ultrafast spectroscopy was used to measure the interfacial charge transfer dynamics of different sizes of CsPbBr₃ assembled with TiO₂. The effect of perovskite size on the charge transfer is discussed. According to our experimental data analysis, the time constants of the interfacial electron transfer and charge recombination of the assembled systems of CsPbBr₃ and titanium dioxide become larger when the size of the CsPbBr₃ nanocrystals increases. We discuss the physical mechanism by which the size of perovskites affects the rate of charge transfer in detail. We expect that our experimental results provide experimental support for the application of novel quantum dots for solar cell materials. Full article

Graphite carbon nitride (g-C₃N₄) is a low band gap non-metallic polymer semiconductor that has broad application prospects and is an ideal material for absorbing visible light, as g-C₃N₄ materials have strong oxidation properties and are easy to modify. The structure formation of g-C₃N₄-based materials makes a series of photocatalytic synthesis reactions possible and improves photocatalytic reaction activity. In this paper, the development history, structures, and performance of g-C₃N₄ are briefly introduced, and the modification strategies of g-C₃N₄ are summarized to improve its photocatalytic and photoelectric catalytic properties via doping, heterojunction construction, etc. The light absorption and utilization of the catalysts are also analyzed in terms of light source conditions, and the application of g-C₃N₄ and its modified materials in photocatalysis and photocatalytic degradation is reviewed. Full article

Gallium oxide (Ga₂O₃), as a wide-bandgap semiconductor material, is highly expected to find extensive applications in optoelectronic devices, high-power electronics, gas sensors, etc. However, the photoelectric properties of Ga₂O₃ still need to be improved before its devices become commercially viable. As is well known, doping is an effective method to modulate the various properties of semiconductor materials. In this study, Zn–N co-doped Ga₂O₃ films with various doping concentrations were grown in situ on sapphire substrates by atomic layer deposition (ALD) at 250 °C, followed by post-annealing at 900 °C. The post-annealed undoped Ga₂O₃ film showed a highly preferential orientation, whereas with the increase in Zn doping concentration, the preferential orientation of Ga₂O₃ films was deteriorated, turning it into an amorphous state. The surface roughness of the Ga₂O₃ thin films is largely affected by doping. As a result of post-annealing, the bandgaps of the Ga₂O₃ films can be modulated from 4.69 eV to 5.41 eV by controlling the Zn–N co-doping concentrations. When deposited under optimum conditions, high-quality Zn–N co-doped Ga₂O₃ films showed higher transmittance, a larger bandgap, and fewer defects compared with undoped ones. Full article

Titanium dioxide (TiO₂) is a wide-bandgap semiconductor material with broad application potential, known for its excellent photocatalytic performance, high chemical stability, low cost, and non-toxicity. These properties make it highly attractive for applications in photovoltaic energy, environmental remediation, and optoelectronic devices. For instance, TiO₂ is widely used as a photocatalyst for hydrogen production via water splitting and for degrading organic pollutants, thanks to its efficient photo-generated electron–hole separation. Additionally, TiO₂ exhibits remarkable performance in dye-sensitized solar cells and photodetectors, providing critical support for advancements in green energy and photoelectric conversion technologies. Boron-doped diamond (BDD) is renowned for its exceptional electrical conductivity, high hardness, wide electrochemical window, and outstanding chemical inertness. These unique characteristics enable its extensive use in fields such as electrochemical analysis, electrocatalysis, sensors, and biomedicine. For example, BDD electrodes exhibit high sensitivity and stability in detecting trace chemicals and pollutants, while also demonstrating excellent performance in electrocatalytic water splitting and industrial wastewater treatment. Its chemical stability and biocompatibility make it an ideal material for biosensors and implantable devices. Research indicates that the combination of TiO₂ nanostructures and BDD into heterostructures can exhibit unexpected optical and electrical performance and transport behavior, opening up new possibilities for photoluminescence and rectifier diode devices. However, applications based on this heterostructure still face challenges, particularly in terms of photodetector, photoelectric emitter, optical modulator, and optical fiber devices under high-temperature conditions. This article explores the potential and prospects of their combined heterostructures in the field of optoelectronic devices such as photodetector, light emitting diode (LED), memory, field effect transistor (FET) and sensing. TiO₂/BDD heterojunction can enhance photoresponsivity and extend the spectral detection range which enables stability in high-temperature and harsh environments due to BDD’s thermal conductivity. This article proposes future research directions and prospects to facilitate the development of TiO₂ nanostructured materials and BDD-based heterostructures, providing a foundation for enhancing photoresponsivity and extending the spectral detection range enables stability in high-temperature and high-frequency optoelectronic devices field. Further research and exploration of optoelectronic devices based on TiO₂-BDD heterostructures hold significant importance, offering new breakthroughs and innovations for the future development of optoelectronic technology. Full article

With the rapid development of marine renewable energy, especially offshore photovoltaic systems, the problem of biofouling of photovoltaic equipment in the marine environment has become increasingly prominent. The attachment of marine organisms such as algae will significantly affect the photoelectric conversion efficiency of photovoltaic panels, thereby reducing the stability and economy of the system. In this study, a composite siloxane coating was designed and prepared. Methyltrimethoxysilane (MTMS) was used as the organosilicon component. The negative potential of the coating was significantly enhanced by incorporating hexagonal boron nitride nanosheets (h-BNNS). This negative potential and the negative charge on the surface of marine organisms, especially algae, would produce electrostatic repulsion, which can effectively reduce the attachment of organisms. The results show that the prepared coating exhibits excellent performance in anti-biofouling, adhesion, chemical stability, transparency, and self-cleaning properties. The transparency of the coating reached 92.7%. After immersion with Chlorella for 28 days, the coverage percentage on the coating surface was only 0.98%, while the coverage percentage on the blank sample was 23.25%. The corrosion resistance and salt resistance of the coating also ensure its stability in complex marine environments, and it has broad application prospects. Full article

Tantalum oxide is a wide bandgap material commonly used as an insulating dielectric layer for devices. In this work, hexagonal Ta₂O₅ (δ-Ta₂O₅) films doped with tungsten (W) were deposited on α-Al₂O₃ (0001) by metal–organic chemical vapor deposition (MOCVD). The effects of W doping on the structural, morphology, and photoelectrical properties of the obtained films were studied. The results showed that all W-doped films were n-type semiconductors. The XRD measurement result exhibited that the increase in the W doping concentration leads to the changes in the preferred growth crystal plane of the films from δ-Ta₂O₅ ($10\overline{1}1$) to (0001). The 1.5% W-doped film possessed the best crystal quality and conductivity. The Hall measurement showed that the minimum resistivity of the film was 2.68 × 10⁴ Ω∙cm, and the maximum carrier concentration was 7.39 × 10¹⁴ cm³. With the increase in the W concentration, the surface roughness of the film increases, while the optical bandgap decreases. The optical band gap of the 1.5% W-doped film was 3.92 eV. The W doping mechanisms were discussed. Full article

Heterojunctions are commonly used in optoelectronic devices to improve device performance. However, interface defects and lattice mismatch often hinder carrier transport and reduce efficiency, emphasizing the need for further exploration of diverse heterojunction structures. In this study, a heterojunction device constructed from Bi₂O₃ and Ga₂O₃ is demonstrated. The microstructures and photoelectrical properties of Bi₂O₃ and Ga₂O₃ thin films were investigated. Bi₂O₃ and Ga₂O₃ thin films show a bandgap of 3.19 and 5.10 eV. The Bi₂O₃/Ga₂O₃ heterojunction-based device demonstrates rectification characteristics, with a rectification ratio of 2.72 × 10³ at ±4.5 V and an ON/OFF ratio of 1.07 × 10⁵ (4.5/−3.9 V). Additionally, we fabricated a sandwich-structured photodetector based on the Bi₂O₃/Ga₂O₃ heterojunction and investigated its ultraviolet photoresponse performance. The photodetector exhibits low dark current (0.34 pA @ −3.9 V) and fast response rise/fall time (<40/920 ms). This work offers important perspectives on the advancement of large-area, low-cost, and high-speed Bi₂O₃ film-based heterojunction photodetectors. Full article

To extend the spectral utilisation of In₂S₃, an In₂S₃/C₃N₄ nanocomposite was prepared. The effects of different sulphur sources, electrodes, and bias voltages on the optoelectronic performance were examined. Photoelectric properties in response to light sources with wavelengths of 405, 532, 650, 780, 808, 980, and 1064 nm were investigated using Au electrodes and the carbon electrodes with 5B pencil drawings. This study shows that the aggregation states of the In₂S₃/C₃N₄ nanocomposite possess photocurrent switching responses in the broadband region of the light spectrum. Combining two types of partially visible light-absorbing material extends utilisation to the near-infrared region. Impurities or defects embody an electron-donating effect. Since the energy levels of defects or impurities with an electron-donating effect are close to the conduction band, low-energy lights (especially NIR) can be utilised. The non-equilibrium carrier concentration (photogenerated electrons) of the nanocomposites increases significantly under NIR photoexcitation conditions. Thus, photoconductive behaviour is manifested. A good photoelectric signal was still measured when zero bias was applied. This demonstrates self-powered photoelectric response characteristics. Different sulphur sources significantly affect the photoelectric performance, suggesting that they create different defects that affect charge transport and base current noise. It is believed that interfacial interactions in the In₂S₃/C₃N₄ nanocomposite create a built-in electric field that enhances the separation and transfer of electrons and holes produced by light stimulation. The presence of the built-in electric field also leads to energy band bending, which facilitates the utilisation of the light with longer wavelengths. This study provides a reference for multidisciplinary applications. Full article

This paper reports on the anisotropic optoelectronic properties of aligned poly(3-hexylthiophene) (P3HT) nanowire (NW) arrays fabricated via blade coating and UV irradiation, exhibiting a remarkably high electrical resistance anisotropy ratio of up to 8.05 between the parallel (0°) and perpendicular (90°) directions. This resistance anisotropy originates from the advantage of directional charge transport. Optimized $5 \mathrm{m}\mathrm{g}/\mathrm{m}\mathrm{L}$ P3HT solutions under 32 min UV irradiation yielded unidirectional π-π*-stacked NWs with enhanced crystallinity. Polarized microscopy and atomic force microscopy confirmed high alignment and dense NW networks. The angular dependence of polarization exhibits a cosine-modulated response, while the angular anisotropy of the measured photocurrent points to structural alignment rather than trap-state control. The scalable fabrication and tunable anisotropy demonstrate potential for polarization-sensitive organic electronics and anisotropic logic devices. Full article

Gallium oxide (Ga₂O₃), as an ultra-wide bandgap semiconducting material, has attracted extensive research interest in recent years. Owing to its outstanding electrical and optical properties, as well as its high reliability, Ga₂O₃ shows great potential in power electronics, optoelectronics, memory devices, and so on. Among all the different polymorphs, ε-Ga₂O₃ is the second most thermally stable phase. It has a hexagonal crystal structure, which contributes to its isotropic physical properties and its suitable growth on low-cost commercial substrates, such as Al₂O₃, Si (111). However, there are far fewer research works on ε-Ga₂O₃ in comparison with the most thermally stable β phase. Aiming to provide a comprehensive view on the current works of ε-Ga₂O₃ and support future research, this review conducts detailed summarizations for the fabrication processes of ε-Ga₂O₃ thin films and the photoelectrical properties of ε-Ga₂O₃-based photodetectors. The effects of different deposition parameters on film phases and qualities are discussed. The forming mechanisms of ε phase prepared by chemical vapor depositions (CVDs) and physical vapor depositions (PVDs) are analyzed, respectively. Conclusions are made concerning the relationships between film microstructures and properties. In addition, strategies for further improving ε-Ga₂O₃ film performance are briefly summarized. Full article