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Search Results (191)

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Keywords = photo-optical measurements

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24 pages, 14119 KB  
Review
All-Solution-Processable Robust Carbon Nanotube Photo-Thermoelectric Devices for Multi-Modal Inspection Applications
by Yukito Kon, Kohei Murakami, Junyu Jin, Mitsuki Kosaka, Hayato Hamashima, Miki Kubota, Leo Takai, Yukio Kawano and Kou Li
Materials 2025, 18(21), 4980; https://doi.org/10.3390/ma18214980 - 31 Oct 2025
Viewed by 411
Abstract
While recent industrial automation trends emphasize the importance of non-destructive inspection by material-identifying millimeter-wave, terahertz-wave, and infrared (MMW, THz, IR) monitoring, fundamental tools in these wavelength bands (such as sensors) are still immature. Although inorganic semiconductors serve as diverse sensors with well-established large-scale [...] Read more.
While recent industrial automation trends emphasize the importance of non-destructive inspection by material-identifying millimeter-wave, terahertz-wave, and infrared (MMW, THz, IR) monitoring, fundamental tools in these wavelength bands (such as sensors) are still immature. Although inorganic semiconductors serve as diverse sensors with well-established large-scale fine-processing fabrication, the use of those devices is insufficient for non-destructive monitoring due to the lack of photo-absorbent properties for such major materials in partial regions across MMW–IR wavelengths. To satisfy the inherent advantageous non-destructive MMW–IR material identification, ultrabroadband operation is indispensable for photo-sensors under compact structure, flexible designability, and sensitive performances. This review then introduces the recent advances of carbon nanotube film-based photo-thermoelectric imagers regarding usable and high-yield device fabrication techniques and scientific synergy among computer vision to collectively satisfy material identification with three-dimensional (3D) structure reconstruction. This review synergizes material science, printable electronics, high-yield fabrication, sensor devices, optical measurements, and imaging into guidelines as functional non-destructive inspection platforms. The motivation of this review is to introduce the recent scientific fusion of MMW–IR sensors with visible-light computer vision, and emphasize its significance (non-invasive material-identifying sub-millimeter-resolution 3D-reconstruction with 660 nm–1.15 mm-wavelength imagers at noise equivalent power within 100 pWHz−1/2) among the existing testing methods. Full article
(This article belongs to the Special Issue Electronic, Optical, and Structural Properties of Carbon Nanotubes)
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18 pages, 1905 KB  
Article
Flexible Copper Mesh Electrodes with One-Step Ball-Milled TiO2 for High-Performance Dye-Sensitized Solar Cells
by Adnan Alashkar, Taleb Ibrahim and Abdul Hai Alami
Sustainability 2025, 17(21), 9478; https://doi.org/10.3390/su17219478 - 24 Oct 2025
Viewed by 402
Abstract
Advancements in flexible, low-cost, and recyclable alternatives to transparent conductive oxides (TCOs) are critical challenges in the sustainability of third-generation solar cells. This work introduces a copper mesh-based transparent electrode for dye-sensitized solar cells, replacing conventional fluorine doped-tin oxide (FTO)-coated glass to simultaneously [...] Read more.
Advancements in flexible, low-cost, and recyclable alternatives to transparent conductive oxides (TCOs) are critical challenges in the sustainability of third-generation solar cells. This work introduces a copper mesh-based transparent electrode for dye-sensitized solar cells, replacing conventional fluorine doped-tin oxide (FTO)-coated glass to simultaneously reduce spectral reflection losses, enhance mechanical flexibility, and enable material recyclability. Titanium dioxide (TiO2) photoanodes were synthesized and directly deposited onto the mesh via a single-step, low-energy ball milling process, which eliminates TiO2 paste preparation and high-temperature annealing while reducing fabrication time from over three hours to 30 min. Structural and surface analyses confirmed the deposition of high-purity anatase-phase TiO2 with strong adhesion to the mesh branches, enabling improved dye loading and electron injection pathways. Optical studies revealed higher visible light absorption for the copper mesh compared to FTO in the visible range, further enhanced upon TiO2 and Ru-based dye deposition. Electrochemical measurements showed that TiO2/Cu mesh electrodes exhibited significantly higher photocurrent densities and faster photo response rates than bare Cu mesh, with dye-sensitized Cu mesh achieving the lowest charge transfer resistance in impedance analysis. Techno–economic and sustainability assessments revealed a decrease of 7.8% in cost and 82% in CO2 emissions associated with the fabrication of electrodes as compared to conventional TCO electrodes. The synergy between high conductivity, transparency, mechanical durability, and a scalable, recyclable fabrication route positions this architecture as a strong candidate for next-generation dye-sensitized solar modules that are both flexible and sustainable. Full article
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15 pages, 4072 KB  
Article
Electrostatic MEMS Phase Shifter for SiN Photonic Integrated Circuits
by Seyedfakhreddin Nabavi, Michaël Ménard and Frederic Nabki
J. Sens. Actuator Netw. 2025, 14(5), 88; https://doi.org/10.3390/jsan14050088 - 29 Aug 2025
Viewed by 4496
Abstract
Optical phase modulation is essential for a wide range of silicon photonic integrated circuits used in communication applications. In this study, an optical phase shifter utilizing photo-elastic effects is proposed, where mechanical stress is induced by electrostatic micro-electro-mechanical systems (MEMS) with actuators arranged [...] Read more.
Optical phase modulation is essential for a wide range of silicon photonic integrated circuits used in communication applications. In this study, an optical phase shifter utilizing photo-elastic effects is proposed, where mechanical stress is induced by electrostatic micro-electro-mechanical systems (MEMS) with actuators arranged in a comb drive configuration. The design incorporates suspended serpentine silicon nitride (SiN) optical waveguides. Through extensive numerical simulations, it is shown that the change in the effective refractive index (neff) of the optical waveguide is a function of the voltage applied to the electrostatic actuators and that such neff tuning can be achieved for a broad range of wavelengths. Implemented within one arm of an unbalanced Mach–Zehnder interferometer (MZI), the phase shifter achieves a phase change of π when the stressed optical path measures 4.7 mm, and the actuators are supplied with 80 V DC and consume almost no power. This results in a half-wave voltage-length product (VπL) of 37.6 V·cm. Comparative analysis with contemporary optical phase shifters highlights the proposed design’s superior power efficiency, compact footprint, and simplified fabrication process, making it a highly efficient component for reconfigurable MEMS-based silicon nitride photonic integrated circuits. Full article
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12 pages, 3178 KB  
Article
Terahertz Optoelectronic Properties of Monolayer MoS2 in the Presence of CW Laser Pumping
by Ali Farooq, Wen Xu, Jie Zhang, Hua Wen, Qiujin Wang, Xingjia Cheng, Yiming Xiao, Lan Ding, Altayeb Alshiply Abdalfrag Hamdalnile, Haowen Li and Francois M. Peeters
Physics 2025, 7(3), 27; https://doi.org/10.3390/physics7030027 - 14 Jul 2025
Cited by 1 | Viewed by 3019
Abstract
Monolayer (ML) molybdenum disulfide (MoS2) is a typical valleytronic material which has important applications in, for example, polarization optics and information technology. In this study, we examine the effect of continuous wave (CW) laser pumping on the basic optoelectronic properties of [...] Read more.
Monolayer (ML) molybdenum disulfide (MoS2) is a typical valleytronic material which has important applications in, for example, polarization optics and information technology. In this study, we examine the effect of continuous wave (CW) laser pumping on the basic optoelectronic properties of ML MoS2 placed on a sapphire substrate, where the pump photon energy is larger than the bandgap of ML MoS2. The pump laser source is provided by a compact semiconductor laser with a 445 nm wavelength. Through the measurement of THz time-domain spectroscopy, we obtain the complex optical conductivity for ML MoS2, which are found to be fitted exceptionally well with the Drude–Smith formula. Therefore, we expect that the reduction in conductivity in ML MoS2 is mainly due to the effect of electronic backscattering or localization in the presence of the substrate. Meanwhile, one can optically determine the key electronic parameters of ML MoS2, such as the electron density ne, the intra-band electronic relaxation time τ, and the photon-induced electronic localization factor c. The dependence of these parameters upon CW laser pump intensity is examined here at room temperature. We find that 445 nm CW laser pumping results in the larger ne, shorter τ, and stronger c in ML MoS2 indicating that laser excitation has a significant impact on the optoelectronic properties of ML MoS2. The origin of the effects obtained is analyzed on the basis of solid-state optics. This study provides a unique and tractable technique for investigating photo-excited carriers in ML MoS2. Full article
(This article belongs to the Section Applied Physics)
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15 pages, 2579 KB  
Article
Photo-Scanning Capacitance Microscopy and Spectroscopy Study of Epitaxial GaAsN Layers and GaAsN P-I-N Solar Cell Structures
by Adam Szyszka, Wojciech Dawidowski, Damian Radziewicz and Beata Ściana
Nanomaterials 2025, 15(14), 1066; https://doi.org/10.3390/nano15141066 - 9 Jul 2025
Viewed by 664
Abstract
This work presents a novel approach to investigating epitaxial GaAsN layers and GaAsN-based p-i-n solar cell structures using light-assisted scanning capacitance microscopy (SCM) and spectroscopy. Due to the technological challenges in growing high-quality GaAsN with controlled nitrogen incorporation, the epitaxial layers often exhibit [...] Read more.
This work presents a novel approach to investigating epitaxial GaAsN layers and GaAsN-based p-i-n solar cell structures using light-assisted scanning capacitance microscopy (SCM) and spectroscopy. Due to the technological challenges in growing high-quality GaAsN with controlled nitrogen incorporation, the epitaxial layers often exhibit inhomogeneity in their opto-electrical properties. By combining localized cross-section SCM measurements with wavelength-tunable optical excitation (800–1600 nm), we resolved carrier concentration profiles, internal electric fields, and deep-level transitions across the device structure at a nanoscale resolution. A comparative analysis between electrochemical capacitance–voltage (EC-V) profiling and photoluminescence spectroscopy confirmed multiple localized transitions, attributed to compositional fluctuations and nitrogen-induced defects within GaAsN. The SCM method revealed spatial variations in energy states, including discrete nitrogen-rich regions and gradual variations in the nitrogen content throughout the layer depth, which are not recognizable using standard characterization methods. Our results demonstrate the unique capability of the photo-scanning capacitance microscopy and spectroscopy technique to provide spatially resolved insights into complex dilute nitride structures, offering a universal and accessible tool for semiconductor structures and optoelectronic devices evaluation. Full article
(This article belongs to the Special Issue Spectroscopy and Microscopy Study of Nanomaterials)
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18 pages, 2909 KB  
Article
Characterization of a Supersonic Plasma Jet by Means of Optical Emission Spectroscopy
by Ruggero Barni, Hanaa Zaka, Dipak Pal, Irsa Amjad and Claudia Riccardi
Photonics 2025, 12(6), 595; https://doi.org/10.3390/photonics12060595 - 10 Jun 2025
Viewed by 1489
Abstract
We discuss an innovative thin film deposition method, Plasma Assisted Supersonic Jet Deposition, which combines the chemistry richness of a reactive cold plasma environment and the assembly control of the film growth allowed by a supersonic jet directed at the substrate. Optical Emission [...] Read more.
We discuss an innovative thin film deposition method, Plasma Assisted Supersonic Jet Deposition, which combines the chemistry richness of a reactive cold plasma environment and the assembly control of the film growth allowed by a supersonic jet directed at the substrate. Optical Emission Spectroscopy was used to characterize the plasma state and the supersonic jet, together with its interaction with the substrate. We obtained several results in the deposition of silicon oxide thin films from Hexamethyldisiloxane, with different degrees of organic groups retention. In particular we exploited the features of emission spectra to measure the plasma dissociation and oxidation degree of the organic groups, as a function of the jet parameters. If controlled growth is achieved, such films are nanostructured materials suitable for applications like catalysis, photo catalysis, energy conversion and storage, besides their traditional uses as a barrier or protective coatings. Full article
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17 pages, 3451 KB  
Article
TPA and PET Photo-Degradation by Heterogeneous Catalysis Using a (Al2O3)0.75TiO2 Coating
by Mónica A. Camacho-González, Alberto Hernández-Reyes, Aristeo Garrido-Hernández, Octavio Olivares-Xometl, Natalya V. Likhanova and Irina V. Lijanova
Surfaces 2025, 8(2), 34; https://doi.org/10.3390/surfaces8020034 - 21 May 2025
Cited by 3 | Viewed by 2571
Abstract
The combination of the catalytic properties of Al2O3/TiO2 formed an efficient system to degrade the ubiquitous pollutants TPA and PET. The coating (Al2O3)0.75TiO2 was characterized by X-ray diffraction. Stainless steel disks [...] Read more.
The combination of the catalytic properties of Al2O3/TiO2 formed an efficient system to degrade the ubiquitous pollutants TPA and PET. The coating (Al2O3)0.75TiO2 was characterized by X-ray diffraction. Stainless steel disks with photo-catalyst coating were placed transversely in a 3.0 L vertical glass reactor with ascending airflow for supplying oxygen to the reaction medium and visible light lamps for photo-activation. The analysis of the coating homogeneity, morphology and particle size distribution of the TiO2 coatings and (Al2O3)0.75TiO2 system were confirmed by SEM. Optical properties and band-gap energy were calculated by using the Tauc equation. UV–Vis spectrophotometry (UV–Vis) and chemical oxygen demand (COD) were the quantitative techniques to measure the reduction in the initial TPA and PET concentrations. Full article
(This article belongs to the Special Issue Surface Engineering of Thin Films)
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15 pages, 2530 KB  
Article
Reliability of the Fluorescence-Sensitive Optical Sensor Measurement of TcPO2 and Susceptibility to Pressure Injury Around the Foot
by Melanie Mir-Jiménez, Marta Izquierdo-Renau and Iván Julian-Rochina
Appl. Sci. 2025, 15(10), 5710; https://doi.org/10.3390/app15105710 - 20 May 2025
Viewed by 1010
Abstract
Pressure injuries (PIs) are typically characterized by lesions of the dermis and subcutaneous tissue; they result from a downward force exerted on the area between a bony prominence and an external surface. Transcutaneous oxygen pressure (TcPO2) measurements are a standardized method for measuring [...] Read more.
Pressure injuries (PIs) are typically characterized by lesions of the dermis and subcutaneous tissue; they result from a downward force exerted on the area between a bony prominence and an external surface. Transcutaneous oxygen pressure (TcPO2) measurements are a standardized method for measuring tissue oxygen pressure. Standardized TcPO2 measurement data are lacking in regions susceptible to pressure injury. It is unclear whether the absence of data can be attributed to the unreliability and variability of the measurements obtained. This study aimed to assess the reliability and repeatability of TcPO2 measurements conducted using a fluorescence-sensitive photo-optical sensor at three sites on the foot where PIs can occur but for which no data are available. Thirty volunteers participated in this study. TcPO2 was measured in two sessions, one week apart, at the lateral of the fifth metatarsal head, the styloid process, and the lateral malleolus of both feet. TcPO2 (mmHg) exhibited moderate reliability for the left fifth metatarsal and right fifth metatarsal styloid process (ICC: 0.575 and 0.624, respectively). The right fifth metatarsal and the right and left lateral malleoli demonstrated good and excellent reliability of the styloid process of the left fifth metatarsal, with ICC values of 0.810, 0.816, 0.763, and 0.900, respectively. The implementation of a fluorescence-sensitive photo-optical sensor for the measurement of TcPO2 in the designated regions yielded reliable and reproducible measurements. Full article
(This article belongs to the Special Issue Applications of Sensors in Biomechanics and Biomedicine)
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11 pages, 7161 KB  
Article
Enhancing Optoelectronic Properties of Multicrystalline Silicon Using Dual Treatments for Solar Cell Applications
by Karim Choubani, Yasmin Zouari, Ameny El Haj, Achref Mannai, Mohammed A. Almeshaal, Wissem Dimassi and Mohamed Ben Rabha
Inorganics 2025, 13(5), 142; https://doi.org/10.3390/inorganics13050142 - 30 Apr 2025
Cited by 1 | Viewed by 768
Abstract
Surface texturing is vital for enhancing light absorption and optimizing the optoelectronic properties of multicrystalline silicon (mc-Si) samples. Texturing significantly improves light absorption by minimizing reflectance and extending the effective path length of incident light. Furthermore, porous silicon treatment on textured mc-Si surfaces [...] Read more.
Surface texturing is vital for enhancing light absorption and optimizing the optoelectronic properties of multicrystalline silicon (mc-Si) samples. Texturing significantly improves light absorption by minimizing reflectance and extending the effective path length of incident light. Furthermore, porous silicon treatment on textured mc-Si surfaces offers additional advantages, including enhanced carrier generation, reduced surface recombination, and improved light emission. In this study, a dual treatment combining porous silicon and texturing was employed as an effective approach to enhance the optical and optoelectronic properties of mc-Si. Both porous silicon and texturing were achieved through a chemical etching process. After these surface modifications, the morphology and structure of mc-Si were examined using Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), UV-Vis-IR spectroscopy, photoluminescence (PL), WCT-120 photo-conductance lifetime measurements, and Two-Internal Quantum Efficiency (IQE) analysis. The results reveal a substantial improvement in the material’s properties. The total reflectivity dropped from 35% to approximately 5%, while the effective minority carrier lifetime increased from 2 µs for bare mc-Si to 36 µs after treatment. Additionally, the two-dimensional IQE value rose from 35% for the untreated sample to 66% after treatment, representing an enhancement of around 31%. These findings highlight the potential of surface engineering techniques in optimizing mc-Si for photovoltaic applications. Full article
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14 pages, 3265 KB  
Article
Graphene/PtSe2/Ultra-Thin SiO2/Si Broadband Photodetector with Large Responsivity and Fast Response Time
by Qing-Hai Zhu, Jian Chai, Shi-Yu Wei, Jia-Bao Sun, Yi-Jun Sun, Daisuke Kiriya and Ming-Sheng Xu
Nanomaterials 2025, 15(7), 519; https://doi.org/10.3390/nano15070519 - 29 Mar 2025
Cited by 3 | Viewed by 1421
Abstract
Burgeoning two-dimensional (2D) materials provide more opportunities to overcome the shortcomings of silicon-based photodetectors. However, the inevitable carrier loss in the 2D material/Si heterojunction has seriously hindered further improvement in responsivity and detection speed. Here, we propose a graphene/PtSe2/ultra-thin SiO2 [...] Read more.
Burgeoning two-dimensional (2D) materials provide more opportunities to overcome the shortcomings of silicon-based photodetectors. However, the inevitable carrier loss in the 2D material/Si heterojunction has seriously hindered further improvement in responsivity and detection speed. Here, we propose a graphene/PtSe2/ultra-thin SiO2/Si photodetector (PD) with multiple optimization mechanisms. Due to the fact that photo-generated carriers can travel in the graphene plane toward the Au electrode, the introduction of a top graphene contact with low sheet resistance provides a carrier collection path in the vertical direction and further restricts the carrier recombination behavior at the lateral grain boundary of PtSe2 film. The ultra-thin SiO2 passivation layer reduces the defects at the PtSe2/Si heterojunction interface. As compared to the counterpart device without the graphene top contact, the responsivity, specific detectivity, and response speed of graphene/PtSe2/ultra-thin SiO2/Si PD under 808 nm illumination are improved to 0.572 A/W, 1.50 × 1011 Jones, and 17.3/38.8 µs, respectively. The device can detect broad-spectrum optical signals as measured from 375 nm to 1550 nm under zero bias. The PD line array with 16-pixel units shows good near-infrared imaging ability at room temperature. Our study will provide guiding significance for how to improve the comprehensive properties of PDs based on 2D/Si heterostructure for practical applications. Full article
(This article belongs to the Section Nanoelectronics, Nanosensors and Devices)
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39 pages, 4703 KB  
Article
Mechanisms of the Photomechanical Response in Thin-Film Dye-Doped Glassy Polymers
by Zoya Ghorbanishiadeh, Ankita Bhuyan, Bojun Zhou, Morteza Sheibani Karkhaneh and Mark G. Kuzyk
Polymers 2025, 17(2), 254; https://doi.org/10.3390/polym17020254 - 20 Jan 2025
Viewed by 1516
Abstract
This work aims to determine the mechanism of the photomechanical response of poly(Methyl methacrylate) polymer doped with the photo-isomerizable dye Disperse Red 1 using the non-isomerizable dye Disperse Orange 11 as a control to isolate photoisomerization. Samples are free-standing thin films with thickness [...] Read more.
This work aims to determine the mechanism of the photomechanical response of poly(Methyl methacrylate) polymer doped with the photo-isomerizable dye Disperse Red 1 using the non-isomerizable dye Disperse Orange 11 as a control to isolate photoisomerization. Samples are free-standing thin films with thickness that is small compared with the optical skin depth to assure uniform illumination and photomechanical response throughout their volume, which differentiates these studies from most others. Polarization-dependent measurements of the photomechanical stress response are used to deconvolute the contributions of angular hole burning, molecular reorientation and photothermal heating. While photo-isomerization of dopant molecules is commonly observed in dye-doped polymers, the shape changes of a molecule might not couple strongly to the host polymer through steric mechanical interactions, thus not contributing substantially to a macroscopic shape change. To gain insights into the effectiveness of such mechanical coupling, we directly probe the dopant molecules using dichroism measurements simultaneously while measuring the photomechanical response and find mechanical coupling to be small enough to make photothermal heating—mediated by the transfer of optical energy as heat to the polymer—the dominant mechanism. We also predict the fraction of light energy converted to mechanical energy using a model whose parameters are thermodynamic material properties that are measured with independent experiments. We find that in the thin-film geometry, these dye-doped glassy polymers are as efficient as any other material but their large Young’s modulus relative to other organic materials, such as liquid crystal elastomers, makes them suitable in applications that require mechanically strong materials. The mechanical properties and the photomechanical response of thin films are observed to be significantly different than in fibers, suggesting that the geometry of the material and surface effects might play an important role. Full article
(This article belongs to the Special Issue Advanced Stimuli-Responsive Polymer Composites)
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14 pages, 3831 KB  
Article
A-Site Ion Doping in Cs2AgBiBr6 Double Perovskite Films for Improved Optical and Photodetector Performance
by Yuejia Wu, Yanpeng Meng, Qirun Hu, Songchao Shen, Chengxi Zhang, Ang Bian and Jun Dai
Crystals 2024, 14(12), 1068; https://doi.org/10.3390/cryst14121068 - 12 Dec 2024
Cited by 3 | Viewed by 2461
Abstract
Perovskite materials, as emerging semiconductors, have attracted significant attention for their exceptional optoelectronic properties, tunable bandgaps, ease of fabrication, and cost-effectiveness, making them promising candidates for next-generation optoelectronic devices. The all-inorganic perovskite Cs2AgBiBr6 distinguishes itself from other perovskite materials due [...] Read more.
Perovskite materials, as emerging semiconductors, have attracted significant attention for their exceptional optoelectronic properties, tunable bandgaps, ease of fabrication, and cost-effectiveness, making them promising candidates for next-generation optoelectronic devices. The all-inorganic perovskite Cs2AgBiBr6 distinguishes itself from other perovskite materials due to its remarkable optical absorption and emission properties, excellent stability, prolonged carrier recombination lifetime, and nontoxic characteristics. However, a deeper understanding of its unique luminescent properties and a further optimization of its structure and performance are still necessary. This study systematically investigates the optimization of Cs2AgBiBr6 double perovskite films through A-site Na+ doping. At an optimal Na+ doping concentration of 3.5% (Na0.07Cs1.93AgBiBr6), the film shows 1.4 times and 2.7 times enhancement in light absorption and photoluminescence intensity, compared to the undoped film. Low-temperature spectroscopy measurements indicate that Na0.07Cs1.93AgBiBr6 exhibits higher exciton binding energy and phonon energy. Based on Na0.07Cs1.93AgBiBr6, the photodetectors demonstrate significant performance improvements, with a high photocurrent response of 10−2 A, a photo-to-dark current ratio (PDCR) of 7.57 × 104, a responsivity (R) of 16.23 A/W, a detectivity (D*) of 2.92 × 1012 Jones, a linear dynamic range (LDR) of 98.75 dB, and a fast response time of 943 ms. This work provides a promising strategy for optimizing all-inorganic perovskite materials through doping and offers guidance for enhancing high-performance photodetectors. Full article
(This article belongs to the Special Issue Novel Photoelectric Materials and Their Photophysical Processes)
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29 pages, 14607 KB  
Article
Development of Dopant-Free N,N′-Bicarbazole-Based Hole Transport Materials for Efficient Perovskite Solar Cells
by Muhammad Adnan, Hira Naz, Muzammil Hussain, Zobia Irshad, Riaz Hussain and Hany W. Darwish
Int. J. Mol. Sci. 2024, 25(23), 13117; https://doi.org/10.3390/ijms252313117 - 6 Dec 2024
Cited by 9 | Viewed by 1643
Abstract
Efficient and stable hole-transport material (HTM) is essential for enhancing the efficiency and stability of high-efficiency perovskite solar cells (PSCs). The commonly used HTMs such as spiro-OMeTAD need dopants to produce high efficiency, but those dopants degrade the perovskite film and cause instability. [...] Read more.
Efficient and stable hole-transport material (HTM) is essential for enhancing the efficiency and stability of high-efficiency perovskite solar cells (PSCs). The commonly used HTMs such as spiro-OMeTAD need dopants to produce high efficiency, but those dopants degrade the perovskite film and cause instability. Therefore, the development of dopant-free N,N′-bicarbazole-based HTM is receiving huge attention for preparing stable, cost-effective, and efficient PSCs. Herein, we designed and proposed seven distinct small-molecule-based HTMs (B1–B7), which are synthesized and do not require dopants to fabricate efficient PSCs. To design this new series, we performed synergistic side-chain engineering on the synthetic reference molecule (B) by replacing two methylthio (–SCH3) terminal groups with a thiophene bridge and electron-withdrawing acceptor. The enhanced phase inversion geometry of the proposed molecules resulted in reduced energy gaps and better electrical, optical, and optoelectronic properties. Density functional theory (DFT) and time-dependent DFT simulations have been used to study the precise photo-physical and optoelectronic properties. We also looked into the effects of holes and electrons and the materials’ structural and photovoltaic properties, including light harvesting energy, frontier molecular orbital, transition density matrix, density of states, electron density matrix, and natural population analysis. Electron density difference maps identify the interfacial charge transfer from the donor to the acceptor through the bridge, and natural population analysis measures the amount of charge on each portion of the donor, bridge, and acceptor, which most effectively represents the role of the end-capped moieties in facilitating charge transfer. Among these designed molecules, the B6 molecule has the greatest absorbance (λmax of 444.93 nm in dichloromethane solvent) and a substantially shorter optical band gap of 3.93 eV. Furthermore, the charge transfer analysis reveals superior charge transfer with improved intrinsic characteristics. Furthermore, according to the photovoltaic analysis, the designed (B1–B7) HTMs have the potential to provide better fill factor and open-circuit voltages, which will ultimately increase the power conversion efficiency (PCE) of PSCs. Therefore, we recommend these molecules for the next-generation PSCs. Full article
(This article belongs to the Special Issue Advancements in Perovskite and Tandem Solar Cell Technologies)
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20 pages, 14473 KB  
Article
Digitizing the Appearance of 3D Printing Materials Using a Spectrophotometer
by Alina Pranovich, Morten Rieger Hannemose, Janus Nørtoft Jensen, Duc Minh Tran, Henrik Aanæs, Sasan Gooran, Daniel Nyström and Jeppe Revall Frisvad
Sensors 2024, 24(21), 7025; https://doi.org/10.3390/s24217025 - 31 Oct 2024
Cited by 2 | Viewed by 1362
Abstract
The conventional approach to appearance prediction for 3D printed parts is to print a thin slab of material and measure its reflectance or transmittance with a spectrophotometer. Reflectance works for opaque printing materials. Transmittance works for transparent printing materials. However, the conventional approach [...] Read more.
The conventional approach to appearance prediction for 3D printed parts is to print a thin slab of material and measure its reflectance or transmittance with a spectrophotometer. Reflectance works for opaque printing materials. Transmittance works for transparent printing materials. However, the conventional approach does not work convincingly for translucent materials. For these, we need to separate scattering and absorption. We suggest printing a collection of thin slabs of different thicknesses and using these in a spectrophotometer to obtain the scattering and absorption properties of the material. A model is fitted to the measured data in order to estimate the scattering and absorption properties. To this end, we compare the use of Monte Carlo light transport simulation and the use of an analytic model that we developed from the theory of radiative transfer in plane-parallel media. We assess the predictive capabilities of our method through a multispectral photo-render comparison based on the estimated optical properties. Full article
(This article belongs to the Special Issue Recent Trends and Advances in Color and Spectral Sensors: 2nd Edition)
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11 pages, 607 KB  
Article
Vertical Electric-Field-Induced Switching from Strong to Asymmetric Strong–Weak Confinement in GaAs Cone-Shell Quantum Dots Using Transparent Al-Doped ZnO Gates
by Ahmed Alshaikh, Jun Peng, Robert Zierold, Robert H. Blick and Christian Heyn
Nanomaterials 2024, 14(21), 1712; https://doi.org/10.3390/nano14211712 - 27 Oct 2024
Cited by 2 | Viewed by 1147
Abstract
The first part of this work evaluates Al-doped ZnO (AZO) as an optically transparent top-gate material for studies on semiconductor quantum dots. In comparison with conventional Ti gates, samples with AZO gates demonstrate a more than three times higher intensity in the quantum [...] Read more.
The first part of this work evaluates Al-doped ZnO (AZO) as an optically transparent top-gate material for studies on semiconductor quantum dots. In comparison with conventional Ti gates, samples with AZO gates demonstrate a more than three times higher intensity in the quantum dot emission under comparable excitation conditions. On the other hand, charges inside a process-induced oxide layer at the interface to the semiconductor cause artifacts at gate voltages above U 1 V. The second part describes an optical and simulation study of a vertical electric-field (F)-induced switching from a strong to an asymmetric strong–weak confinement in GaAs cone-shell quantum dots (CSQDs), where the charge carrier probability densities are localized on the surface of a cone. These experiments are performed at low U and show no indications of an influence of interface charges. For a large F, the measured radiative lifetimes are substantially shorter compared with simulation results. We attribute this discrepancy to an F-induced transformation of the shape of the hole probability density. In detail, an increasing F pushes the hole into the wing part of a CSQD, where it forms a quantum ring. Accordingly, the confinement of the hole is changed from strong, which is assumed in the simulations, to weak, where the local radius is larger than the bulk exciton Bohr radius. In contrast to the hole, an increasing F pushes the electron into the CSQD tip, where it remains in a strong confinement. This means the radiative lifetime for large F is given by an asymmetric confinement with a strongly confined electron and a hole in a weak confinement. To our knowledge, this asymmetric strong–weak confinement represents a novel kind of quantum mechanical confinement and has not been observed so far. Furthermore, the observed weak confinement for the hole represents a confirmation of the theoretically predicted transformation of the hole probability density from a quantum dot into a quantum ring. For such quantum rings, application as storage for photo-excited charge carriers is predicted, which can be interesting for future quantum photonic integrated circuits. Full article
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