Novel Photoelectric Materials and Their Photophysical Processes

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Materials for Energy Applications".

Deadline for manuscript submissions: closed (20 March 2025) | Viewed by 2957

Special Issue Editors


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Guest Editor
Qingdao Innovation and Development Base, Harbin Engineering University, Qingdao 266000, China
Interests: inorganic semiconductor; ultrafast spectroscopy; photon–matter interaction; photovoltaics; nanomaterials; plasmonics; sensing

E-Mail Website
Guest Editor
Qingdao Innovation and Development Base, Harbin Engineering University, Qingdao 266000, China
Interests: perovskite; nanocrystals; quantum dots; sensing; solar cells; light-emitting diodes; photophysics

Special Issue Information

Dear Colleagues,

In the ever-evolving field of renewable energy, the search for efficient and sustainable photoelectric materials and devices remains the most important research priority. The theme of this Special Issue is "Novel Photoelectric Materials and Their Photophysical Processes", which aims to bring together cutting-edge research and insights in this dynamic field to meet the urgent need for advancing photovoltaic technologies for a greener future.

Harnessing light–matter interactions for advanced materials and devices have been at the core of scientific and technological developments. From photovoltaics (PVs) to photodetectors (PDs), and light-emitting diodes (LEDs) to laser diodes (LDs), the field of optoelectronics plays an integral role in shaping the future of modern technology. As the world seeks cleaner energy sources, faster data processing, and more sensitive sensors, the demand for novel optoelectronic materials and devices becomes stronger.

The aim of this Special Issue is to provide an outstanding platform for researchers, scientists, and engineers to present their pioneering work in the field of photoelectric materials and devices. This Special Issue accepts research or review articles with the overall objective including but not limited to the following diverse topics:

  1. Novel material synthesis: to explore the development of novel photoactive materials, perovskite, quantum dots, 2D materials, inorganic semiconductors, organic semiconductors, etc., with a focus on synthesis techniques, material characterization, and device integration.
  2. Creative device design: advance the design and engineering of photoelectric devices, such as PDs, PVs, LEDs, and LDs, to improve performance, efficiency, and multifunctionality.
  3. Photophysical processes: in-depth studies of the complex mechanisms of light–matter interactions, charge transport, exciton dynamics, and energy transfer processes, to optimize device performance.
  4. Innovative applications: developing broader optoelectronics applications, from renewable energy generation and energy-efficient applications to data communications, healthcare, and quantum information processing.

Contributing to this Special Issue provides an excellent opportunity for authors to share their transformative research results with peers and professionals worldwide. It also fosters interdisciplinary collaboration, as the world of optoelectronics incorporates materials science, physics, chemistry, and engineering. Here, we invite researchers to contribute to this Special Issue to advance our continuing development in photoelectric materials and devices.

Sincerely,

Dr. Xianshao Zou
Dr. Wenping Yin
Guest Editors

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Keywords

  • optoelectronics
  • crystal structure
  • energy
  • perovskite
  • semiconductor
  • polymer
  • ultrafast spectroscopy
  • photon–matter interaction
  • photophysics and photochemistry
  • charge carrier dynamics.

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Published Papers (2 papers)

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Research

14 pages, 3831 KiB  
Article
A-Site Ion Doping in Cs2AgBiBr6 Double Perovskite Films for Improved Optical and Photodetector Performance
by Yuejia Wu, Yanpeng Meng, Qirun Hu, Songchao Shen, Chengxi Zhang, Ang Bian and Jun Dai
Crystals 2024, 14(12), 1068; https://doi.org/10.3390/cryst14121068 - 12 Dec 2024
Cited by 1 | Viewed by 1089
Abstract
Perovskite materials, as emerging semiconductors, have attracted significant attention for their exceptional optoelectronic properties, tunable bandgaps, ease of fabrication, and cost-effectiveness, making them promising candidates for next-generation optoelectronic devices. The all-inorganic perovskite Cs2AgBiBr6 distinguishes itself from other perovskite materials due [...] Read more.
Perovskite materials, as emerging semiconductors, have attracted significant attention for their exceptional optoelectronic properties, tunable bandgaps, ease of fabrication, and cost-effectiveness, making them promising candidates for next-generation optoelectronic devices. The all-inorganic perovskite Cs2AgBiBr6 distinguishes itself from other perovskite materials due to its remarkable optical absorption and emission properties, excellent stability, prolonged carrier recombination lifetime, and nontoxic characteristics. However, a deeper understanding of its unique luminescent properties and a further optimization of its structure and performance are still necessary. This study systematically investigates the optimization of Cs2AgBiBr6 double perovskite films through A-site Na+ doping. At an optimal Na+ doping concentration of 3.5% (Na0.07Cs1.93AgBiBr6), the film shows 1.4 times and 2.7 times enhancement in light absorption and photoluminescence intensity, compared to the undoped film. Low-temperature spectroscopy measurements indicate that Na0.07Cs1.93AgBiBr6 exhibits higher exciton binding energy and phonon energy. Based on Na0.07Cs1.93AgBiBr6, the photodetectors demonstrate significant performance improvements, with a high photocurrent response of 10−2 A, a photo-to-dark current ratio (PDCR) of 7.57 × 104, a responsivity (R) of 16.23 A/W, a detectivity (D*) of 2.92 × 1012 Jones, a linear dynamic range (LDR) of 98.75 dB, and a fast response time of 943 ms. This work provides a promising strategy for optimizing all-inorganic perovskite materials through doping and offers guidance for enhancing high-performance photodetectors. Full article
(This article belongs to the Special Issue Novel Photoelectric Materials and Their Photophysical Processes)
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13 pages, 2999 KiB  
Article
Mechanisms for Enhancing Luminescence Yield in KBr Crystals under the Influence of Low-Temperature Uniaxial Elastic Deformation
by Kuanyshbek Shunkeyev, Shynar Sagimbayeva, Zhiger Ubaev and Adelya Kenzhebayeva
Crystals 2024, 14(8), 698; https://doi.org/10.3390/cryst14080698 - 31 Jul 2024
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Abstract
This study investigates the radiative relaxation of electronic excitations through luminescence spectroscopy techniques applied to high-purity KBr crystals subjected to low-temperature (85 K) uniaxial deformation along the <100> and <110> crystallographic directions. Results demonstrate that the most significant enhancement in the intensity of [...] Read more.
This study investigates the radiative relaxation of electronic excitations through luminescence spectroscopy techniques applied to high-purity KBr crystals subjected to low-temperature (85 K) uniaxial deformation along the <100> and <110> crystallographic directions. Results demonstrate that the most significant enhancement in the intensity of σ-(4.42 eV) and π-(2.3 eV) luminescence from self-trapped excitons in KBr crystals occurs with elastic deformation along the <110> direction, aligning with the axis of the hole component of the anion self-trapped exciton. Deformation-induced changes in X-ray, tunneling, and thermally stimulated luminescence spectra reveal a new band, denoted as Ex, peaking at approximately 3.58 eV, attributed to tunneling charge exchange between the F’- and VK-centers in their ground state. Full article
(This article belongs to the Special Issue Novel Photoelectric Materials and Their Photophysical Processes)
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